公开(公告)号：US4057167A

公开(公告)日：1977-11-08

申请号：US746604

申请日：1976-12-01

Applicant: Jin Ku Lee

Inventor： Jin Ku Lee

IPC: B65D47/28 ,  A47G19/22 ,  B65D43/20 ,  B65D51/18

CPC classification number: B65D47/286

Abstract: A valved closure for a disposable drinking receptacle containing a consumable beverage is disclosed. The valved receptacle closure comprises a thin plastic cover having a peripheral groove adapted to sealingly engage with the rim of a drinking receptacle and a drinking opening therein through which the beverage is consumed. A slide valve is received in a recess formed in the cover and is movable into a closed position over the drinking opening. A releasable latch mechanism cooperates with the valve to secure the valve in its closed position against the force of a resilient member, such as a spring. When the latch is released, the resilient member urges the valve into its open position exposing the drinking opening to permit drinking therefrom.

Abstract translation: 公开了一种用于含有可消费饮料的一次性饮用容器的阀盖。 带阀的容器封闭件包括薄塑料盖，其具有适于与饮用容器的边缘密封接合的周边凹槽和其中饮料被消耗的饮用开口。 滑阀被容纳在形成在盖中的凹部中并且可移动到饮用开口上方的关闭位置。 可释放的闩锁机构与阀配合，以克服弹性构件（例如弹簧）的力将阀固定在其关闭位置。 当闩锁被释放时，弹性构件促使阀进入其暴露饮用开口以允许从其中饮用的打开位置。

公开(公告)号：US08541775B2

公开(公告)日：2013-09-24

申请号：US13331698

申请日：2011-12-20

Applicant: Seung Beom Baek ,  Young Ho Lee ,  Jin Ku Lee ,  Mi Ri Lee

Inventor： Seung Beom Baek ,  Young Ho Lee ,  Jin Ku Lee ,  Mi Ri Lee

IPC: H01L21/02

CPC classification number: H01L27/101 ,  H01L27/1021 ,  H01L27/2409 ,  H01L29/872 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1683

Abstract: A schottky diode, a resistive memory device including the schottky diode and a method of manufacturing the same. The resistive memory device includes a semiconductor substrate including a word line, a schottky diode formed on the word line, and a storage layer formed on the schottky diode. The schottky diode includes a first semiconductor layer, a conductive layer formed on the first semiconductor layer and having a lower work function than the first semiconductor layer, and a second semiconductor layer formed on the to conductive layer.

Abstract translation: 肖特基二极管，包括肖特基二极管的电阻式存储器件及其制造方法。 电阻式存储器件包括一个包括字线，形成在字线上的肖特基二极管和形成在肖特基二极管上的存储层的半导体衬底。 肖特基二极管包括第一半导体层，形成在第一半导体层上并具有比第一半导体层低的功函数的导电层和形成在导电层上的第二半导体层。