公开(公告)号：US20100184294A1

公开(公告)日：2010-07-22

申请号：US12687987

申请日：2010-01-15

申请人： Jin-Ho Park ,  Gil-Heyun CHOI ,  Byung-Lyul PARK ,  Jong-Myeong LEE ,  Zung-Sun CHOI ,  Hye-Kyung JUNG

发明人： Jin-Ho Park ,  Gil-Heyun CHOI ,  Byung-Lyul PARK ,  Jong-Myeong LEE ,  Zung-Sun CHOI ,  Hye-Kyung JUNG

IPC分类号： H01L21/311 ,  B08B7/00

CPC分类号： H01L21/6719 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76861 ,  H01L21/76877

摘要： In a method of manufacturing a semiconductor device, a substrate is loaded to a process chamber having, unit process sections in which unit processes are performed, respectively. The unit processes are performed on the substrate independently from one another at the unit process sections under a respective process pressure. The substrate sequentially undergoes the unit processes at the respective unit process section of the process chamber. Cleaning processes are individually performed to the unit process sections, respectively, when the substrate is transferred from each of the unit process sections and no substrate is positioned at the unit process sections. Accordingly, the process defects of the process units may be sufficiently prevented and the operation period of the manufacturing apparatus is sufficiently elongated.

摘要翻译： 在制造半导体器件的方法中，将衬底装载到具有分别执行单元处理的单元处理部的处理室。 单元处理在相应的处理压力下在单元处理部分彼此独立地在衬底上进行。 基板在处理室的各单元处理部分依次进行单元处理。 当从每个单元处理部分传送基板并且没有基板位于单元处理部分时，分别对单元处理部分进行清洁处理。 因此，可以充分防止处理单元的处理缺陷，并且制造装置的操作周期充分延长。