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公开(公告)号:US20110305968A1
公开(公告)日:2011-12-15
申请号:US12981410
申请日:2010-12-29
申请人: Jin-Hwa LEE , Chi-Seung Lee , Seong-Jin An , Sang-II Han , Kah-Young Song
发明人: Jin-Hwa LEE , Chi-Seung Lee , Seong-Jin An , Sang-II Han , Kah-Young Song
IPC分类号: H01M8/24
CPC分类号: H01M8/0204 , H01M8/04141 , H01M2008/1095 , Y02P70/56
摘要: A fuel cell stack includes: a plurality of membrane-electrode assemblies; first and second end plates respectively positioned outside outermost ones of the membrane-electrode assemblies; and a plurality of separators respectively positioned between the membrane-electrode assemblies and between the outermost ones of the membrane-electrode assemblies and the first and second end plates. The first end plate includes an oxidizing agent inlet, an oxidizing agent outlet, and a moisture supplying flow path connecting the oxidizing agent inlet and the oxidizing agent outlet. The moisture supplying flow path includes a first end portion adjacent to the oxidizing agent outlet and a second end portion adjacent to the oxidizing agent inlet, the first end portion being larger than the second end portion and being a different distance away from a surface of the first end plate facing away from the second end plate than the second end portion.
摘要翻译: 燃料电池堆包括:多个膜 - 电极组件; 分别位于最外面的膜 - 电极组件外的第一和第二端板; 以及分别位于膜 - 电极组件和最外层膜电极组件以及第一和第二端板之间的多个分离器。 第一端板包括氧化剂入口,氧化剂出口和连接氧化剂入口和氧化剂出口的供水流路。 供水流路包括与氧化剂出口相邻的第一端部和与氧化剂入口相邻的第二端部,第一端部部分大于第二端部部分,并且距离氧化剂出口的表面不同的距离 第一端板远离第二端板而不是第二端部。
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公开(公告)号:US06667253B2
公开(公告)日:2003-12-23
申请号:US09906306
申请日:2001-07-16
申请人: Won Song , Seong-II Kim , Sang-II Han , Chang-Hoon Lee , Choung-Hee Kim
发明人: Won Song , Seong-II Kim , Sang-II Han , Chang-Hoon Lee , Choung-Hee Kim
IPC分类号: H01L2176
CPC分类号: H01L23/544 , H01L2223/54426 , H01L2223/54453 , H01L2223/5446 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要: An alignment mark and an exposure alignment system and method using the alignment mark for aligning wafers are described. The alignment mark is formed of a plurality of mesa or trench type unit marks that are aligned in an inline pattern within an underlying layer under a layer to which a chemical mechanical polishing process is applied to form an alignment signal during an alignment process, thereby preventing a dishing phenomenon caused by the chemical mechanical process.
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