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    Flash memory control devices that support multiple memory mapping schemes and methods of operating same
    1.
    发明授权
    Flash memory control devices that support multiple memory mapping schemes and methods of operating same 有权
    支持多个内存映射方案的Flash存储器控制设备及其操作方法

    公开(公告)号：US08117374B2

    公开(公告)日：2012-02-14

    申请号：US11289175

    申请日：2005-11-29

    申请人： Jin-Hyuk Kim ,  Young-Joon Choi ,  Chan-Ik Park

    发明人： Jin-Hyuk Kim ,  Young-Joon Choi ,  Chan-Ik Park

    IPC分类号： G06F12/00

    CPC分类号： G06F12/0246

    摘要： There is provided an apparatus for controlling a flash memory, which includes a memory for storing a plurality of flash translation layers; and a control block for, when an access is requested from outside, determining a pattern of the access, selecting one of the flash translation layers stored in the memory based on the determination result, and managing mapping data of the flash memory based on the selected flash translation layer.

    摘要翻译： 提供了一种用于控制闪速存储器的装置，其包括用于存储多个闪存转换层的存储器; 以及控制块，用于当从外部请求访问时，确定所述访问的模式，基于所述确定结果选择存储在所述存储器中的闪存转换层中的一个，以及基于所选择的所述闪存管理映射数据 闪光翻译层。

    Flash memory control devices that support multiple memory mapping schemes and methods of operating same
    2.
    发明申请
    Flash memory control devices that support multiple memory mapping schemes and methods of operating same 有权
    支持多个内存映射方案的Flash存储器控制设备及其操作方法

    公开(公告)号：US20060179212A1

    公开(公告)日：2006-08-10

    申请号：US11289175

    申请日：2005-11-29

    申请人： Jin-Hyuk Kim ,  Young-Joon Choi ,  Chan-Ik Park

    发明人： Jin-Hyuk Kim ,  Young-Joon Choi ,  Chan-Ik Park

    IPC分类号： G06F12/00

    CPC分类号： G06F12/0246

    摘要： There is provided an apparatus for controlling a flash memory, which includes a memory for storing a plurality of flash translation layers; and a control block for, when an access is requested from outside, determining a pattern of the access, selecting one of the flash translation layers stored in the memory based on the determination result, and managing mapping data of the flash memory based on the selected flash translation layer.

    摘要翻译： 提供了一种用于控制闪速存储器的装置，其包括用于存储多个闪存转换层的存储器; 以及控制块，用于当从外部请求访问时，确定所述访问的模式，基于所述确定结果选择存储在所述存储器中的闪存转换层中的一个，以及基于所选择的所述闪存管理映射数据 闪光翻译层。

    Incremental merge methods and memory systems using the same
    4.
    发明授权
    Incremental merge methods and memory systems using the same 失效
    增量合并方法和使用相同的内存系统

    公开(公告)号：US07529879B2

    公开(公告)日：2009-05-05

    申请号：US10990065

    申请日：2004-11-16

    申请人： Jin-Hyuk Kim ,  Chan-Ik Park ,  Young-Gon Kim ,  Kyong-Ae Kim

    发明人： Jin-Hyuk Kim ,  Chan-Ik Park ,  Young-Gon Kim ,  Kyong-Ae Kim

    IPC分类号： G06F12/02

    CPC分类号： G06F12/0246 ,  G06F2212/7205

    摘要： Memory systems and methods of controlling a flash memory are provided that execute one of a plurality of merge stages of an incremental merge operation responsive to receiving a command to the flash memory. Executing one of a plurality of merge stages may include receiving a command to the flash memory, determining whether the flash memory is executing an incremental merge operation and executing a next merge stage of the incremental merge operation if the flash memory is executing an incremental merge operation.

    摘要翻译： 提供了控制闪速存储器的存储器系统和方法，其响应于接收到闪速存储器的命令而执行增量合并操作的多个合并级中的一个。 执行多个合并阶段中的一个可以包括：如果闪存正在执行增量合并操作，则向闪存接收命令，确定闪存是否正在执行增量合并操作并执行增量合并操作的下一个合并阶段 。

    Storage device and method of mapping a nonvolatile memory based on a map history
    5.
    发明授权
    Storage device and method of mapping a nonvolatile memory based on a map history 有权
    基于地图历史映射非易失性存储器的存储装置和方法

    公开(公告)号：US08745312B2

    公开(公告)日：2014-06-03

    申请号：US12071498

    申请日：2008-02-21

    申请人： Eun-Jin Yun ,  Hye-Young Kim ,  Young-Joon Choi ,  Dong-Gi Lee ,  Jin-Hyuk Kim

    发明人： Eun-Jin Yun ,  Hye-Young Kim ,  Young-Joon Choi ,  Dong-Gi Lee ,  Jin-Hyuk Kim

    IPC分类号： G06F12/06

    CPC分类号： G06F12/0246 ,  G06F2212/7201

    摘要： A non-volatile memory may include a plurality of map blocks for storing a plurality of map units, the map units representing mapping information between physical addresses and logical addresses. A storage device may include such a non-volatile memory. A method of mapping such a non-volatile memory may include writing historical information regarding locations of valid map units among the map units included in map blocks previously allocated among the map blocks when a new map block among the map blocks is allocated, the valid map units representing valid mapping information, and constructing a map table including all of the valid mapping information based on the historical information and a result of searching a map block recently allocated among the map blocks.

    摘要翻译： 非易失性存储器可以包括用于存储多个地图单元的多个地图块，地图单元表示物理地址和逻辑地址之间的映射信息。 存储设备可以包括这样的非易失性存储器。 映射这种非易失性存储器的方法可以包括：当分配地图块中的新映射块之前，在地图块之前分配的映射块中包括的映射单元中的有效映射单元的位置的写入历史信息，有效映射 表示有效映射信息的单元，以及基于历史信息构建包括所有有效映射信息的映射表，以及搜索最近在映射块中分配的映射块的结果。

    Storage device and method of mapping a nonvolatile memory based on a map history
    6.
    发明申请
    Storage device and method of mapping a nonvolatile memory based on a map history 有权
    基于地图历史映射非易失性存储器的存储装置和方法

    公开(公告)号：US20080209161A1

    公开(公告)日：2008-08-28

    申请号：US12071498

    申请日：2008-02-21

    申请人： Eun-Jin Yun ,  Hye-Young Kim ,  Young-Joon Choi ,  Dong-Gi Lee ,  Jin-Hyuk Kim

    发明人： Eun-Jin Yun ,  Hye-Young Kim ,  Young-Joon Choi ,  Dong-Gi Lee ,  Jin-Hyuk Kim

    IPC分类号： G06F12/06

    CPC分类号： G06F12/0246 ,  G06F2212/7201

    摘要： A non-volatile memory may include a plurality of map blocks for storing a plurality of map units, the map units representing mapping information between physical addresses and logical addresses. A storage device may include such a non-volatile memory. A method of mapping such a non-volatile memory may include writing historical information regarding locations of valid map units among the map units included in map blocks previously allocated among the map blocks when a new map block among the map blocks is allocated, the valid map units representing valid mapping information, and constructing a map table including all of the valid mapping information based on the historical information and a result of searching a map block recently allocated among the map blocks.

    摘要翻译： 非易失性存储器可以包括用于存储多个地图单元的多个地图块，地图单元表示物理地址和逻辑地址之间的映射信息。 存储设备可以包括这样的非易失性存储器。 映射这种非易失性存储器的方法可以包括：当分配地图块中的新映射块时，在地图块之前分配的映射块中包括的映射单元中的有效映射单元的位置的写入历史信息，有效映射 表示有效映射信息的单元，以及基于历史信息构建包括所有有效映射信息的映射表，以及搜索最近在映射块中分配的映射块的结果。

    Memory Card and Method of Driving the Same
    7.
    发明申请
    Memory Card and Method of Driving the Same 审中-公开
    存储卡及其驱动方法

    公开(公告)号：US20080109588A1

    公开(公告)日：2008-05-08

    申请号：US11565184

    申请日：2006-11-30

    申请人： Eun-Jin Yun ,  Jin-Hyuk Kim ,  Dong-Gi Lee ,  Shea-Yun Lee

    发明人： Eun-Jin Yun ,  Jin-Hyuk Kim ,  Dong-Gi Lee ,  Shea-Yun Lee

    IPC分类号： G06F12/02

    CPC分类号： G06F12/0246 ,  Y02D10/13

    摘要： A memory card capable of having an increased number of meta blocks and a method of driving the memory card. A method of reading data from the memory card includes receiving logical addresses from a host. It is determined whether memory blocks corresponding to the received logical addresses belong to a first region allocated to a user data region in the memory card or a second region including meta blocks in the memory card. The memory blocks corresponding to the logical addresses are masked as erased blocks when the memory blocks belong to the second region.

    摘要翻译： 一种能够增加元数据块的存储卡和驱动存储卡的方法。 从存储卡读取数据的方法包括从主机接收逻辑地址。 确定与接收到的逻辑地址相对应的存储器块是否属于分配给存储卡中的用户数据区域的第一区域或包括存储卡中的元块的第二区域。 当存储器块属于第二区域时，对应于逻辑地址的存储器块被屏蔽为擦除块。

    Apparatus, memory device controller and method of controlling a memory device
    8.
    发明授权
    Apparatus, memory device controller and method of controlling a memory device 有权
    装置，存储装置控制器和控制存储装置的方法

    公开(公告)号：US08161320B2

    公开(公告)日：2012-04-17

    申请号：US11606900

    申请日：2006-12-01

    申请人： Jin-Hyuk Kim ,  Yang-Sup Lee ,  Young-Gon Kim

    发明人： Jin-Hyuk Kim ,  Yang-Sup Lee ,  Young-Gon Kim

    IPC分类号： G06F11/00

    CPC分类号： G11C29/76 ,  G06F12/0246 ,  G06F2212/1016 ,  G06F2212/7201 ,  G06F2212/7204

    摘要： An apparatus, memory device controller and method of controlling a memory device are provided. The example apparatus may include a bad block bitmap referencing unit configured to obtain bad block information from a bad block bitmap based on a given memory address, the given memory address being one of a logical memory address and a physical memory address corresponding to the logical memory address, the bad block information indicating whether a given memory block corresponding to the given memory address is a bad block and a memory mapping unit configured to obtain the physical memory address corresponding to the logical memory address, and configured to obtain a reserved physical memory address corresponding to the physical memory address if the bad block information indicates that the given memory block is a bad block. In an example, the apparatus may be embodied as a memory device controller including a flash translation layer (FTL).

    摘要翻译： 提供了一种设备，存储器件控制器和控制存储器件的方法。 该示例设备可以包括坏块位图参考单元，其被配置为基于给定的存储器地址从坏块位图获得坏块信息，给定存储器地址是与逻辑存储器对应的逻辑存储器地址之一和物理存储器地址 指示与给定存储器地址相对应的给定存储块是否为坏块的坏块信息和被配置为获得与逻辑存储器地址对应的物理存储器地址的存储器映射单元，并且被配置为获得预留的物理存储器地址 对应于物理存储器地址，如果坏块信息指示给定的存储器块是坏块。 在一个示例中，该装置可以被实现为包括闪存转换层（FTL）的存储器件控制器。

    CAPACITIVE TOUCH SENSOR
    10.
    发明申请
    CAPACITIVE TOUCH SENSOR 审中-公开
    电容触摸传感器

    公开(公告)号：US20130278551A1

    公开(公告)日：2013-10-24

    申请号：US13810181

    申请日：2010-07-15

    申请人： Jin-Hyuk Kim ,  Jong-Sun Kim

    发明人： Jin-Hyuk Kim ,  Jong-Sun Kim

    IPC分类号： G06F3/044

    CPC分类号： G06F3/044 ,  G06F3/0416 ,  G06F3/0418

    摘要： The present invention relates to a capacitive touch sensor, and relates to a touch sensor which precisely senses whether there is any touch, without using a reference voltage or reference current in the touch sensor but by converting data between neighboring channels into two types of data having different polarities and by comparing the same. The invention makes it possible to miniaturize a structure of the touch sensor and to ensure compatibility allowing application to a variety of touch panels by minimizing the influence of noise from the outside environment. More specifically, the present invention provides a capacitive touch sensor comprising: at least one receiver channel RX which outputs analog data of a voltage for change in capacitance caused by presence or absence of a transmitter channel TX pulse impression and touch; at least one receiver unit which is connected to the receiver channel RX, receives the analog data of the voltage, and outputs bipolar pulse width modulation signals; a counter which periodically operates in accordance with reset RST signals; and at least one flip-flop which outputs, as digital data, the bipolar pulse width modulation signals input from the receiver unit, by using count values received from the counter.

    摘要翻译： 本发明涉及电容式触摸传感器，并且涉及一种触摸传感器，其不需要在触摸传感器中使用参考电压或参考电流来精确地感测是否存在触摸，而是通过将相邻通道之间的数据转换为具有 不同的极性和比较。 本发明使得可以使触摸传感器的结构小型化并且确保兼容性，从而通过最小化来自外部环境的噪声的影响来应用于各种触摸面板。 更具体地，本发明提供一种电容式触摸传感器，包括：至少一个接收器通道RX，其输出由存在或不存在发射器通道TX脉冲印象和触摸而导致的电容变化的电压的模拟数据; 连接到接收机通道RX的至少一个接收器单元接收电压的模拟数据，并输出双极性脉冲宽度调制信号; 根据复位RST信号周期性地操作的计数器; 以及至少一个触发器，其通过使用从计数器接收的计数值作为数字数据输出从接收器单元输入的双极性脉宽调制信号。