公开(公告)号：US11450799B2

公开(公告)日：2022-09-20

申请号：US16772909

申请日：2018-08-07

申请人： Jinan Jingzheng Electronics Co., Ltd.

发明人： Xiuquan Zhang ,  Houbin Zhu ,  Wen Hu ,  Juting Luo ,  Hui Hu ,  Yangyang Li

IPC分类号： H01L41/08 ,  C30B29/18 ,  C30B29/30 ,  H01L41/312 ,  H01L41/187 ,  H03H9/17 ,  H03H9/56

摘要： The invention provides a micron-scale monocrystal film. The micron-scale monocrystal film includes 1) a substrate layer, and 2) a micron-scale monocrystal film layer located on the substrate layer, wherein a transition layer is interposed between the substrate layer and micron-scale monocrystal film layer, and the transition layer may include a first transition layer disposed adjacent to the substrate layer and a second transition layer disposed adjacent to the micron monocrystal film layer, wherein the transition layer may include H and an element from at least one kind of plasma gas used during the plasma bonding of the substrate layer and the micron-scale monocrystal film layer.

公开(公告)号：US20200313068A1

公开(公告)日：2020-10-01

申请号：US16772909

申请日：2018-08-07

申请人： Jinan Jingzheng Electronics Co., Ltd.

发明人： Xiuquan Zhang ,  Houbin Zhu ,  Wen Hu ,  Juting Luo ,  Hui Hu ,  Yangyang Li

IPC分类号： H01L41/08 ,  H01L41/312 ,  C30B29/18 ,  C30B29/30

摘要： The invention provides a micron-scale monocrystal film. The micron-scale monocrystal film includes 1) a substrate layer, and 2) a micron-scale monocrystal film layer located on the substrate layer, wherein a transition layer is interposed between the substrate layer and micron-scale monocrystal film layer, and the transition layer may include a first transition layer disposed adjacent to the substrate layer and a second transition layer disposed adjacent to the micron monocrystal film layer, wherein the transition layer may include H and an element from at least one kind of plasma gas used during the plasma bonding of the substrate layer and the micron-scale monocrystal film layer.