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    GASBAG TYPE PAVEMENT ACCELERATED LOADING TESTING APPARATUS
    3.
    发明申请
    GASBAG TYPE PAVEMENT ACCELERATED LOADING TESTING APPARATUS 有权
    GASBAG型加速加载测试装置

    公开(公告)号：US20120103106A1

    公开(公告)日：2012-05-03

    申请号：US13382843

    申请日：2010-04-29

    申请人： Jinxiang Feng ,  Xingyu Guo ,  Xuguang Wang ,  Ying Han ,  Peng Zhang ,  Xiangzhen Kong ,  Huijun Wang ,  Xianggui Li ,  Zhiguang Guan ,  Qian Jia ,  Jiwei Zhang ,  Qingzhen Wu

    发明人： Jinxiang Feng ,  Xingyu Guo ,  Xuguang Wang ,  Ying Han ,  Peng Zhang ,  Xiangzhen Kong ,  Huijun Wang ,  Xianggui Li ,  Zhiguang Guan ,  Qian Jia ,  Jiwei Zhang ,  Qingzhen Wu

    IPC分类号： G01N3/00

    CPC分类号： G01N3/36 ,  G01N2203/0044

    摘要： Disclosed is a gasbag type pavement testing apparatus, comprising a main frame (7), roller wheels (1) and a pneumatic suspension frame system which consists of gasbags (2), ventilated bolts (5), spokes (6), an inflating valve (10), a communicating shaft (11) and rockers (3). The gasbags (2), ventilated bolts (5), spokes (6), inflating valve (10), and communicating shaft (11) constitute an air storing space interconnecting each gasbag, the air storing space is inflated or deflated through the inflating valve (10), and the rockers (3) are hinge-jointed with the spokes (6). The spokes (6), rockers (3) and the communicating shaft (11) constitute a spoke assembly. The roller wheels (1) are driven by the spoke assembly to rotate round the communicating shaft (11), the roller wheels (1) contact the pavement in turn under the joint action of the gasbags (2) and the spoke assembly to simulate the practical situation and hence conduct the rolling test for the pavement. The testing apparatus performs the test with higher accuracy and higher efficiency.

    摘要翻译： 公开了一种气囊式路面试验装置，包括主框架（7），滚轮（1）和气囊悬挂框架系统，其由气囊（2），通风螺栓（5），辐条（6），膨胀阀 （10），连通轴（11）和摇臂（3）。 气囊（2），通气螺栓（5），辐条（6），充气阀（10）和连通轴（11）构成一个将每个气囊相互连接的空气存储空间，空气存储空间通过充气阀膨胀或放气 （10），摇臂（3）与轮辐（6）铰接。 辐条（6），摇臂（3）和连通轴（11）构成一个辐条组件。 滚轮（1）由轮辐组件驱动以围绕连通轴（11）旋转，滚轮（1）在气囊（2）和轮辐组件的联合作用下依次接触路面，以模拟 实际情况，进行路面滚动试验。 测试装置以更高的精度和更高的效率进行测试。

    Gasbag type pavement accelerated loading testing apparatus
    4.
    发明授权
    Gasbag type pavement accelerated loading testing apparatus 有权
    气囊式路面加速试验装置

    公开(公告)号：US08757002B2

    公开(公告)日：2014-06-24

    申请号：US13382843

    申请日：2010-04-29

    申请人： Jinxiang Feng ,  Xingyu Guo ,  Xuguang Wang ,  Ying Han ,  Peng Zhang ,  Xiangzhen Kong ,  Huijun Wang ,  Xianggui Li ,  Zhiguang Guan ,  Qian Jia ,  Jiwei Zhang ,  Qingzhen Wu

    发明人： Jinxiang Feng ,  Xingyu Guo ,  Xuguang Wang ,  Ying Han ,  Peng Zhang ,  Xiangzhen Kong ,  Huijun Wang ,  Xianggui Li ,  Zhiguang Guan ,  Qian Jia ,  Jiwei Zhang ,  Qingzhen Wu

    IPC分类号： G01N3/00

    CPC分类号： G01N3/36 ,  G01N2203/0044

    摘要： Disclosed is a gasbag type pavement testing apparatus, comprising a main frame (7), roller wheels (1) and a pneumatic suspension frame system which consists of gasbags (2), ventilated bolts (5), spokes (6), an inflating valve (10), a communicating shaft (11) and rockers (3). The gasbags (2), ventilated bolts (5), spokes (6), inflating valve (10), and communicating shaft (11) constitute an air storing space interconnecting each gasbag, the air storing space is inflated or deflated through the inflating valve (10), and the rockers (3) are hinge-jointed with the spokes (6). The spokes (6), rockers (3) and the communicating shaft (11) constitute a spoke assembly. The roller wheels (1) are driven by the spoke assembly to rotate round the communicating shaft (11), the roller wheels (1) contact the pavement in turn under the joint action of the gasbags (2) and the spoke assembly to simulate the practical situation and hence conduct the rolling test for the pavement. The testing apparatus performs the test with higher accuracy and higher efficiency.

    摘要翻译： 公开了一种气囊式路面试验装置，包括主框架（7），滚轮（1）和气囊悬挂框架系统，其由气囊（2），通风螺栓（5），辐条（6），膨胀阀 （10），连通轴（11）和摇臂（3）。 气囊（2），通气螺栓（5），辐条（6），充气阀（10）和连通轴（11）构成一个将每个气囊相互连接的空气存储空间，空气存储空间通过充气阀膨胀或放气 （10），摇臂（3）与轮辐（6）铰接。 辐条（6），摇臂（3）和连通轴（11）构成一个辐条组件。 滚轮（1）由轮辐组件驱动以围绕连通轴（11）旋转，滚轮（1）在气囊（2）和轮辐组件的联合作用下依次接触路面，以模拟 实际情况，进行路面滚动试验。 测试装置以更高的精度和更高的效率进行测试。

    Diode assisted switching spin-transfer torque memory unit
    5.
    发明授权
    Diode assisted switching spin-transfer torque memory unit 有权
    二极管辅助开关自旋转移转矩存储单元

    公开(公告)号：US07944742B2

    公开(公告)日：2011-05-17

    申请号：US12861932

    申请日：2010-08-24

    申请人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

    发明人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

    IPC分类号： G11C11/14

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

    摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.

    摘要翻译： 存储器阵列包括位线和源极线的交叉点阵列。 存储器设置在交叉点阵列的交叉点处。 存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。 晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

    Non-volatile multi-bit memory with programmable capacitance
    6.
    发明授权
    Non-volatile multi-bit memory with programmable capacitance 有权
    带可编程电容的非易失性多位存储器

    公开(公告)号：US07786463B2

    公开(公告)日：2010-08-31

    申请号：US12123685

    申请日：2008-05-20

    申请人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar V. Dimitrov ,  Michael Xuefei Tang ,  Song S. Xue

    发明人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar V. Dimitrov ,  Michael Xuefei Tang ,  Song S. Xue

    IPC分类号： H01L45/00

    CPC分类号： H01L45/085 ,  G11C16/0475 ,  H01L45/1206 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/1658

    摘要： Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A first solid electrolyte cell is over the insulating layer and has a capacitance that is controllable between at least two states and is proximate the source region. A second solid electrolyte cell is over the insulating layer and has a capacitance or resistance that is controllable between at least two states and is proximate the drain region. An insulating element isolates the first solid electrolyte cell from the second solid electrolyte cell. A first anode is electrically coupled to the first solid electrolyte cell. The first solid electrolyte cell is between the anode and the insulating layer. A second anode is electrically coupled to the second solid electrolyte cell. The second solid electrolyte cell is between the anode and the insulating layer. A gate contact layer is over the substrate and between the source region and drain region and in electrical connection with the first anode and the second anode. The gate contact layer is electrically coupled to a voltage source.

    摘要翻译： 公开了具有可编程电容的非易失性多位存储器。 说明性数据存储单元包括包括源极区和漏极区的衬底。 第一绝缘层在衬底上。 第一固体电解质电池在绝缘层之上并且具有在至少两个状态之间可控并且在源极区附近的电容。 第二固体电解质电池在绝缘层之上，并且具有在至少两个状态之间可控的并且在漏极区附近的电容或电阻。 绝缘元件将第一固体电解质电池与第二固体电解质电池隔离。 第一阳极电耦合到第一固体电解质电池。 第一固体电解质电池在阳极和绝缘层之间。 第二阳极电耦合到第二固体电解质电池。 第二固体电解质电池在阳极和绝缘层之间。 栅极接触层在衬底上并且在源极区域和漏极区域之间并且与第一阳极和第二阳极电连接。 栅极接触层电耦合到电压源。

    Deep bitline implant to avoid program disturb
    7.
    发明申请
    Deep bitline implant to avoid program disturb 有权
    深位线植入，以避免程序干扰

    公开(公告)号：US20080153274A1

    公开(公告)日：2008-06-26

    申请号：US11646157

    申请日：2006-12-26

    申请人： Timothy Thurgate ,  Yi He ,  Ming-Sang Kwan ,  Zhizheng Liu ,  Xuguang Wang

    发明人： Timothy Thurgate ,  Yi He ,  Ming-Sang Kwan ,  Zhizheng Liu ,  Xuguang Wang

    IPC分类号： H01L21/425 ,  G11C11/34

    CPC分类号： H01L27/11568 ,  G11C5/02 ,  G11C5/06 ,  H01L27/115

    摘要： A method of forming at least a portion of a dual bit memory core array upon a semiconductor substrate, the method comprising performing front end processing, performing a first bitline implant, or pocket implants, or both into the first bitline spacings to establish buried first bitlines within the substrate, depositing a layer of the spacer material over the charge trapping dielectric and the polysilicon layer features, forming a sidewall spacer adjacent to the charge trapping dielectric and the polysilicon layer features to define second bitline spacings between adjacent memory cells, performing a deep arsenic implant into the second bitline spacings to establish a second bitline within the structure that is deeper than the first bit line, removing the sidewall spacers and performing back end processing.

    摘要翻译： 一种在半导体衬底上形成双位存储器核心阵列的至少一部分的方法，所述方法包括执行前端处理，执行第一位线注入或袋式注入或二者进入第一位线间隔以建立掩埋的第一位线 在衬底内，在电荷俘获电介质和多晶硅层特征之上沉积间隔物材料层，形成与电荷俘获电介质相邻的侧壁隔离层和多晶硅层特征以限定相邻存储器单元之间的第二位线间隔，执行深度 砷注入到第二位线间隔中，以在结构内建立比第一位线更深的第二位线，去除侧壁间隔件并执行后端处理。

    Robot end-effector terminal control frame (TCF) calibration method and device
    9.
    发明授权
    Robot end-effector terminal control frame (TCF) calibration method and device 失效
    机器人终端控制框架（TCF）的校准方法和装置

    公开(公告)号：US5297238A

    公开(公告)日：1994-03-22

    申请号：US752790

    申请日：1991-08-30

    申请人： Xuguang Wang ,  Walter E. Red ,  Peter H. Manley

    发明人： Xuguang Wang ,  Walter E. Red ,  Peter H. Manley

    IPC分类号： B25J9/16 ,  B25J9/18 ,  G06F15/46 ,  G05B19/42

    CPC分类号： B25J9/1697 ,  B25J9/1692 ,  G05B2219/39007 ,  G05B2219/39026 ,  G05B2219/39057

    摘要： A method for calibrating a tool control frame (TCF) on a robot with respect to a known calibration reference claim (CRF), wherein the (CRF) is in rigid body relationship with a robot link. The method includes the steps of (a) attaching a sensory tool to the robot link, (b) calibrating the sensory tool with appropriate units of measurement, (c) identifying a calibration feature to be mapped by the sensory tool, (d) causing relative movement of the calibration feature within sensing range of the sensory tool, (e) recording robot configuration and pose as a first data record, (f) causing relative movement of the calibration feature and sensory tool along a known direction to a new position within sensing range, (g) recording configuration and pose as a second data record, and (h) applying coordinate transformations to the respective data records to generate a correct tool control frame (TCF) pose with respect to the (CRF).

    摘要翻译： 一种用于相对于已知的校准参考权利要求（CRF）校准机器人上的工具控制框架（TCF）的方法，其中所述（CRF）与机器人链接处于刚体状态。 该方法包括以下步骤：（a）将感觉工具附接到机器人连杆上，（b）用适当的测量单位校准感官工具，（c）识别由感官工具映射的校准特征，（d）引起 校准特征在感觉工具的感测范围内的相对运动，（e）记录机器人配置和姿势作为第一数据记录，（f）使得校准特征和感觉工具沿已知方向相对运动到新位置内 感测范围，（g）作为第二数据记录的记录配置和姿势，以及（h）将坐标变换应用于相应的数据记录以产生相对于（CRF）的正确的工具控制帧（TCF）姿态。

    Non-volatile multi-bit memory with programmable capacitance
    10.
    发明授权
    Non-volatile multi-bit memory with programmable capacitance 失效
    具有可编程电容的非易失性多位存储器

    公开(公告)号：US08766230B2

    公开(公告)日：2014-07-01

    申请号：US12857717

    申请日：2010-08-17

    申请人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar V. Dimitrov ,  Michael Xuefei Tang ,  Song S. Xue

    发明人： Xuguang Wang ,  Shuiyuan Huang ,  Dimitar V. Dimitrov ,  Michael Xuefei Tang ,  Song S. Xue

    IPC分类号： H01L45/00

    CPC分类号： H01L45/085 ,  G11C16/0475 ,  H01L45/1206 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/1658

    摘要： Non-volatile multi-bit memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region; and a gate stack structure over the substrate and between the source region and drain region. The gate stack structure includes a first solid electrolyte cell and a second solid electrolyte cell. The solid electrolyte cells having a capacitance that is controllable between at least two states. A gate contact layer is electrically coupled to a voltage source. The first solid electrolyte cell and the second solid electrolyte cell separate the gate contact layer from the substrate.

    摘要翻译： 公开了具有可编程电容的非易失性多位存储器。 说明性的数据存储单元包括一个包括源极区和漏极区的衬底; 以及在衬底上以及在源极区和漏极区之间的栅叠层结构。 栅堆叠结构包括第一固体电解质电池和第二固体电解质电池。 固体电解质电池具有在至少两个状态之间可控制的电容。 栅极接触层电耦合到电压源。 第一固体电解质电池和第二固体电解质电池将栅极接触层与基板分离。