公开(公告)号：US06449525B1

公开(公告)日：2002-09-10

申请号：US09558457

申请日：2000-04-25

申请人： Joanna Liu ,  Zheng Xu

发明人： Joanna Liu ,  Zheng Xu

IPC分类号： G06F1900

CPC分类号： C23C14/35 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3471 ,  C23C14/3492 ,  H01L21/2855 ,  H01L21/76843

摘要： A multiple step process sputter deposits material of uniform thickness on stepped surfaces of an integrated circuit substrate such as the surfaces of a high aspect ratio via or a narrow trench. Material is first sputter deposited at the bottom of the opening at high pressure using a high power RF source connected to a coil in the deposition chamber to couple energy into the plasma. A high power RF bias is applied to the substrate, and a low power DC bias is applied to the sputtering target. The same parameters are repeated in a second step except that the high power RF bias on the substrate support is either reduced to a low power level or reduced to zero (by the end of the second step) to deposit on the lowest quarter of the sidewall of the opening. In a third step, no RF bias is applied to the pedestal remains and the pressure is reduced to a medium pressure state, resulting in a deposition on the second quarter of the sidewall of the opening. In a fourth step, the RF power coupled to the plasma is reduced to a low level, resulting in deposition on the third quarter of sidewall of the opening. Finally, the last quarter of the sidewall of the opening is deposited upon by lowering the pressure further to a low pressure state and applying a high power DC bias to the target.

摘要翻译： 多步骤工艺在诸如高纵横比通孔或窄沟槽的表面的集成电路基板的台阶表面上溅射沉积具有均匀厚度的材料。 首先使用连接到沉积室中的线圈的高功率RF源在高压下在开口的底部溅射沉积材料，以将能量耦合到等离子体中。 向衬底施加高功率RF偏压，并且向溅射靶施加低功率DC偏压。 在第二步骤中重复相同的参数，除了衬底支撑件上的高功率RF偏压被降低到低功率水平或者减小到零（到第二步骤结束）以沉积在侧壁的最低四分之一上 的开幕。 在第三步骤中，没有RF偏压施加到基座保持件并且压力降低到中等压力状态，导致在开口的侧壁的第二个四分之一上的沉积。 在第四步骤中，耦合到等离子体的RF功率被降低到低水平，导致在开口的侧壁的第三季度上沉积。 最后，通过将压力进一步降低到低压状态并向目标施加高功率DC偏压来沉积开口侧壁的最后四分之一。

公开(公告)号：US6080285A

公开(公告)日：2000-06-27

申请号：US152651

申请日：1998-09-14

申请人： Joanna Liu ,  Zheng Xu

发明人： Joanna Liu ,  Zheng Xu

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  H01L21/285 ,  H01L21/768

CPC分类号： C23C14/35 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3471 ,  C23C14/3492 ,  H01L21/2855 ,  H01L21/76843

摘要： A multiple step process sputter deposits material of uniform thickness on stepped surfaces of an integrated circuit substrate such as the surfaces of a high aspect ratio via or a narrow trench. Material is first sputter deposited at the bottom of the opening at high pressure using a source of high power RF energy connected to a coil in the deposition chamber to couple energy into the plasma. A high power RF bias is applied to the substrate, and a low power DC bias is applied to the sputtering target. The same parameters are repeated in a second step except that the high power RF bias on the substrate support is either reduced to a low power level or reduced to zero (by the end of the second step) to deposit on the lowest quarter of the sidewall of the opening. In a third step, no RF bias is applied to the pedestal remains and the pressure is reduced to a medium pressure state, resulting in a deposition on the second quarter of the sidewall of the opening. In a fourth step, the RF power coupled to the plasma is reduced to a low level, resulting in deposition on the third quarter of sidewall of the opening. Finally, the last quarter of the sidewall of the opening is deposited upon by lowering the pressure further to a low pressure state and applying a high power DC bias to the target.

摘要翻译： 多步骤工艺在诸如高纵横比通孔或窄沟槽的表面的集成电路基板的台阶表面上溅射沉积具有均匀厚度的材料。 首先使用连接到沉积室中的线圈的高功率RF能量的源在高压下在材料的底部溅射沉积材料，以将能量耦合到等离子体中。 向衬底施加高功率RF偏压，并且向溅射靶施加低功率DC偏压。 在第二步骤中重复相同的参数，除了衬底支撑件上的高功率RF偏压被降低到低功率水平或者减小到零（到第二步骤结束）以沉积在侧壁的最低四分之一上 的开幕。 在第三步骤中，没有RF偏压施加到基座保持件并且压力降低到中等压力状态，导致在开口的侧壁的第二个四分之一上的沉积。 在第四步骤中，耦合到等离子体的RF功率被降低到低水平，导致在开口的侧壁的第三季度上沉积。 最后，通过将压力进一步降低到低压状态并向目标施加高功率DC偏压来沉积开口侧壁的最后四分之一。

公开(公告)号：US20050138543A1

公开(公告)日：2005-06-23

申请号：US10742373

申请日：2003-12-18

申请人： Joanna Liu

发明人： Joanna Liu

IPC分类号： G06F17/00 ,  G09B7/00

CPC分类号： G09B7/00

摘要： A multi-site training system and a multi-site training method employ an authoring tool. The authoring tool: (1) receives source materials for a training module; (2) generates a plurality of media files from the source materials in a plurality of formats; and (3) generates at least one HTML page identifying the plurality of media files in the plurality of formats. The plurality of media files is installed in at least one media server and the at least one HTML page is installed in at least one information server. The plurality of media files in the plurality of formats provides the system and method with enhanced efficiency.

摘要翻译： 多站点培训系统和多站点培训方法采用创作工具。 创作工具：（1）接收培训模块的资料; （2）从多个格式的源材料生成多个媒体文件; 和（3）生成标识多种格式的多个媒体文件的至少一个HTML页面。 多个媒体文件安装在至少一个媒体服务器中，并且至少一个HTML页面被安装在至少一个信息服务器中。 多种格式的多个媒体文件提供了提高效率的系统和方法。