公开(公告)号：US4871691A

公开(公告)日：1989-10-03

申请号：US269754

申请日：1988-11-08

申请人： Joaquim Torres ,  Roland Madar ,  Claude Bernard ,  Jean-Francois Million-Brodaz

发明人： Joaquim Torres ,  Roland Madar ,  Claude Bernard ,  Jean-Francois Million-Brodaz

IPC分类号： C23C16/42 ,  H01L21/285 ,  H01L21/768

CPC分类号： C23C16/42 ,  H01L21/28518 ,  H01L21/76879 ,  Y10S148/147

摘要： A selective deposition process of a refractory metal silicide onto the silicon apparent surfaces of a wafer partially coated with SiO.sub.2, comprising the following steps: flowing in a cold-wall airtight chamber comprising said wafer a gaseous silane composite at a partial pressure P.sub.Si.sbsb.x.sub.H.sbsb.y and an halogenide of said metal at a partial pressure P.sub.Me ; heating the wafer to a first temperature (T1) for a first duration (t1), P.sub.Si.sbsb.x.sub.H.sbsb.y and P.sub.Me being chosen so as to allow a metal silicide deposition to be formed on the wafer, the silicon being overstoichiometric; and, heating the wafer to a second temperature (T2) lower than the first one for a second duration (t2), T2 being chosen as a function of P.sub.Si.sbsb.x.sub.H.sbsb.y and P.sub.Me so as to allow a stoichiometric metal silicide deposition to be formed on the wafer.

摘要翻译： 将难熔金属硅化物选择性地沉积到部分涂覆有SiO 2的晶片的硅表观表面上，包括以下步骤：在分压PSixHy和卤化物的气体硅烷复合材料中将包含所述晶片的冷壁气密室流动 的所述金属在分压PMe下; 将晶片加热到第一温度（T1）持续第一持续时间（t1），选择PSixHy和PMe以便在晶片上形成金属硅化物沉积，硅是过度化学计量的; 并且将晶片加热到低于第一温度（T2）的第二温度（T2）持续第二持续时间（t2），选择T2作为PSixHy和PMe的函数，以便允许在晶片上形成化学计量的金属硅化物沉积 。