公开(公告)号：US20090251772A1

公开(公告)日：2009-10-08

申请号：US12399775

申请日：2009-03-06

申请人： Johann TRENKLER ,  Hans-Jurgen Mann ,  Udo Nothelfer

发明人： Johann TRENKLER ,  Hans-Jurgen Mann ,  Udo Nothelfer

IPC分类号： G02B5/00

CPC分类号： G02B5/0891 ,  B82Y10/00 ,  G02B5/0816 ,  G02B5/085 ,  G03F7/7015 ,  G03F7/70916 ,  G03F7/70958 ,  G21K1/062

摘要： A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. According to the invention, the reflective optical element has a protective layer system consisting of at least one layer. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.

摘要翻译： 提供了包含一个这样的元件的反射光学元件和EUV光刻设备，该器具显示出低的污染倾向。 根据本发明，反射型光学元件具有由至少一层构成的保护层系统。 保护层系统的光学特性在间隔物和吸收体的光学特性之间，或者对应于间隔物的光学特性。 选择具有尽可能小的虚部的材料和在折射率方面尽可能接近1的实部导致根据两个厚度之间的保护层系统的厚度d1的平台型反射率过程 和d2。 保护层系统的厚度选择为小于d2。

公开(公告)号：US20110228237A1

公开(公告)日：2011-09-22

申请号：US13118028

申请日：2011-05-27

申请人： Johann TRENKLER ,  Hans-Juergen MANN ,  Udo NOTHELFER

发明人： Johann TRENKLER ,  Hans-Juergen MANN ,  Udo NOTHELFER

IPC分类号： G03B27/00 ,  G02B5/08

CPC分类号： G02B5/0891 ,  B82Y10/00 ,  G02B5/0816 ,  G02B5/085 ,  G03F7/7015 ,  G03F7/70916 ,  G03F7/70958 ,  G21K1/062

摘要： A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.

摘要翻译： 提供了包含一个这样的元件的反射光学元件和EUV光刻设备，该器具显示出低的污染倾向。 反射型光学元件具有包括至少两层的保护层系统。 保护层系统的光学特性在间隔物和吸收体的光学特性之间，或者对应于间隔物的光学特性。 选择具有尽可能小的虚部的材料和在折射率方面尽可能接近1的实部导致根据两个厚度之间的保护层系统的厚度d1的平台型反射率过程 和d2。 保护层系统的厚度选择为小于d2。