公开(公告)号：US07952797B2

公开(公告)日：2011-05-31

申请号：US12399775

申请日：2009-03-06

Applicant: Johann Trenkler ,  Hans-Jürgen Mann ,  Udo Nothelfer

Inventor： Johann Trenkler ,  Hans-Jürgen Mann ,  Udo Nothelfer

IPC: F21V9/06

CPC classification number: G02B5/0891 ,  B82Y10/00 ,  G02B5/0816 ,  G02B5/085 ,  G03F7/7015 ,  G03F7/70916 ,  G03F7/70958 ,  G21K1/062

Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system consisting of at least one layer. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.

Abstract translation: 提供了包含一个这样的元件的反射光学元件和EUV光刻设备，该器具显示出低的污染倾向。 反射光学元件具有由至少一层组成的保护层系统。 保护层系统的光学特性在间隔物和吸收体的光学特性之间，或者对应于间隔物的光学特性。 选择具有尽可能小的虚部的材料和在折射率方面尽可能接近1的实部导致根据两个厚度之间的保护层系统的厚度d1的平台型反射率过程 和d2。 保护层系统的厚度选择为小于d2。

公开(公告)号：US5905203A

公开(公告)日：1999-05-18

申请号：US723545

申请日：1996-09-30

Applicant: Georg Flach ,  Udo Nothelfer ,  Gunther Schuster ,  Heribert Weber

Inventor： Georg Flach ,  Udo Nothelfer ,  Gunther Schuster ,  Heribert Weber

IPC: G01P15/08 ,  G01P15/125 ,  H01L29/84

CPC classification number: G01P15/0802 ,  G01P15/125 ,  G01P2015/0831

Abstract: A micromechanical acceleration sensor consists of a first semiconductor wafer and a second semiconductor wafer, where on the first semiconductor wafer first and second electrodes, are provided to create a variable capacitance and the second semiconductor wafer has a movable third electrode, and where on the first semiconductor wafer there is a microelectronic evaluation unit. The moveable electrode is a rocker suspended asymmetrically with regard to an axis of rotation such that each respective portion is of a different length and is opposite one of the first and second electrodes. A closed ring structure is disposed on the surface of the first semiconductor wafer.

Abstract translation: 微机械加速度传感器由第一半导体晶片和第二半导体晶片构成，其中在第一半导体晶片第一和第二电极上设置第一和第二电极以产生可变电容，并且第二半导体晶片具有可移动的第三电极， 半导体晶片有一个微电子评估单元。 可移动电极是相对于旋转轴线不对称地悬挂的摇臂，使得每个相应部分具有不同的长度并与第一和第二电极之一相对。 封闭的环形结构设置在第一半导体晶片的表面上。

公开(公告)号：US08537460B2

公开(公告)日：2013-09-17

申请号：US13530192

申请日：2012-06-22

Applicant: Johann Trenkler ,  Hans-Jürgen Mann ,  Udo Nothelfer

Inventor： Johann Trenkler ,  Hans-Jürgen Mann ,  Udo Nothelfer

IPC: G02B5/08

CPC classification number: G02B5/0891 ,  B82Y10/00 ,  G02B5/0816 ,  G02B5/085 ,  G03F7/7015 ,  G03F7/70916 ,  G03F7/70958 ,  G21K1/062

Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.

Abstract translation: 提供了包含一个这样的元件的反射光学元件和EUV光刻设备，该器具显示出低的污染倾向。 反射型光学元件具有包括至少两层的保护层系统。 保护层系统的光学特性在间隔物和吸收体的光学特性之间，或者对应于间隔物的光学特性。 选择具有尽可能小的虚部的材料和在折射率方面尽可能接近1的实部导致根据两个厚度之间的保护层系统的厚度d1的平台型反射率过程 和d2。 选择保护层系统的厚度小于d2。

公开(公告)号：US20110228237A1

公开(公告)日：2011-09-22

申请号：US13118028

申请日：2011-05-27

Applicant: Johann TRENKLER ,  Hans-Juergen MANN ,  Udo NOTHELFER

Inventor： Johann TRENKLER ,  Hans-Juergen MANN ,  Udo NOTHELFER

IPC: G03B27/00 ,  G02B5/08

CPC classification number: G02B5/0891 ,  B82Y10/00 ,  G02B5/0816 ,  G02B5/085 ,  G03F7/7015 ,  G03F7/70916 ,  G03F7/70958 ,  G21K1/062

Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.

Abstract translation: 提供了包含一个这样的元件的反射光学元件和EUV光刻设备，该器具显示出低的污染倾向。 反射型光学元件具有包括至少两层的保护层系统。 保护层系统的光学特性在间隔物和吸收体的光学特性之间，或者对应于间隔物的光学特性。 选择具有尽可能小的虚部的材料和在折射率方面尽可能接近1的实部导致根据两个厚度之间的保护层系统的厚度d1的平台型反射率过程 和d2。 保护层系统的厚度选择为小于d2。

公开(公告)号：US20120293779A1

公开(公告)日：2012-11-22

申请号：US13530192

申请日：2012-06-22

Applicant: Johann Trenkler ,  Hans-Juergen Mann ,  Udo Nothelfer

Inventor： Johann Trenkler ,  Hans-Juergen Mann ,  Udo Nothelfer

IPC: G21K1/06 ,  G03B27/02

CPC classification number: G02B5/0891 ,  B82Y10/00 ,  G02B5/0816 ,  G02B5/085 ,  G03F7/7015 ,  G03F7/70916 ,  G03F7/70958 ,  G21K1/062

Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.

Abstract translation: 提供了包含一个这样的元件的反射光学元件和EUV光刻设备，该器具显示出低的污染倾向。 反射型光学元件具有包括至少两层的保护层系统。 保护层系统的光学特性在间隔物和吸收体的光学特性之间，或者对应于间隔物的光学特性。 选择具有尽可能小的虚部的材料和在折射率方面尽可能接近1的实部导致根据两个厚度之间的保护层系统的厚度d1的平台型反射率过程 和d2。 保护层系统的厚度选择为小于d2。

公开(公告)号：US08243364B2

公开(公告)日：2012-08-14

申请号：US13118028

申请日：2011-05-27

Applicant: Johann Trenkler ,  Hans-Juergen Mann ,  Udo Nothelfer

Inventor： Johann Trenkler ,  Hans-Juergen Mann ,  Udo Nothelfer

IPC: G02B5/08

CPC classification number: G02B5/0891 ,  B82Y10/00 ,  G02B5/0816 ,  G02B5/085 ,  G03F7/7015 ,  G03F7/70916 ,  G03F7/70958 ,  G21K1/062

Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. The reflective optical element has a protective layer system includes at least two layers. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.

Abstract translation: 提供了包含一个这样的元件的反射光学元件和EUV光刻设备，该器具显示出低的污染倾向。 反射型光学元件具有包括至少两层的保护层系统。 保护层系统的光学特性在间隔物和吸收体的光学特性之间，或者对应于间隔物的光学特性。 选择具有尽可能小的虚部的材料和在折射率方面尽可能接近1的实部导致根据两个厚度之间的保护层系统的厚度d1的平台型反射率过程 和d2。 保护层系统的厚度选择为小于d2。

公开(公告)号：US20090251772A1

公开(公告)日：2009-10-08

申请号：US12399775

申请日：2009-03-06

Applicant: Johann TRENKLER ,  Hans-Jurgen Mann ,  Udo Nothelfer

Inventor： Johann TRENKLER ,  Hans-Jurgen Mann ,  Udo Nothelfer

IPC: G02B5/00

CPC classification number: G02B5/0891 ,  B82Y10/00 ,  G02B5/0816 ,  G02B5/085 ,  G03F7/7015 ,  G03F7/70916 ,  G03F7/70958 ,  G21K1/062

Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. According to the invention, the reflective optical element has a protective layer system consisting of at least one layer. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.

Abstract translation: 提供了包含一个这样的元件的反射光学元件和EUV光刻设备，该器具显示出低的污染倾向。 根据本发明，反射型光学元件具有由至少一层构成的保护层系统。 保护层系统的光学特性在间隔物和吸收体的光学特性之间，或者对应于间隔物的光学特性。 选择具有尽可能小的虚部的材料和在折射率方面尽可能接近1的实部导致根据两个厚度之间的保护层系统的厚度d1的平台型反射率过程 和d2。 保护层系统的厚度选择为小于d2。

公开(公告)号：US20070178690A1

公开(公告)日：2007-08-02

申请号：US11538464

申请日：2006-10-04

Applicant: Markus Nopper ,  Udo Nothelfer ,  Axel Preusse

Inventor： Markus Nopper ,  Udo Nothelfer ,  Axel Preusse

IPC: H01L21/4763 ,  H01L21/31

CPC classification number: H01L21/76885 ,  H01L21/76817 ,  H01L21/76852

Abstract: By using a patterned sacrificial layer for forming highly conductive metal regions, the formation of a reliable conductive barrier layer may be accomplished prior to the actual deposition of a low-k dielectric material. Hence, even highly porous dielectrics may be used in combination with highly conductive metals, substantially without compromising the diffusion characteristics and the electromigration performance. Hence, metallization layers for highly scaled semiconductor devices having critical dimensions of 50 nm and significantly less may be provided.

Abstract translation: 通过使用用于形成高导电性金属区域的图案化牺牲层，可以在实际沉积低k电介质材料之前完成可靠的导电阻挡层的形成。 因此，甚至高度多孔的电介质可以与高导电性金属组合使用，基本上不影响扩散特性和电迁移性能。 因此，可以提供具有临界尺寸为50nm并且显着较小的用于高比例尺度的半导体器件的金属化层。

公开(公告)号：US20060066940A1

公开(公告)日：2006-03-30

申请号：US11216560

申请日：2005-08-31

Applicant: Johann Trenkler ,  Hans-Jurgen Mann ,  Udo Nothelfer

Inventor： Johann Trenkler ,  Hans-Jurgen Mann ,  Udo Nothelfer

IPC: F21V9/04 ,  G02B1/10

CPC classification number: G02B5/0891 ,  B82Y10/00 ,  G02B5/0816 ,  G02B5/085 ,  G03F7/7015 ,  G03F7/70916 ,  G03F7/70958 ,  G21K1/062

Abstract: The invention relates to a reflective optical element and an EUV lithography appliance containing one such element, said appliance displaying a low propensity to contamination. According to the invention, the reflective optical element has a protective layer system consisting of at least one layer. The optical characteristics of the protective layer system are between those of a spacer and an absorber or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.

Abstract translation: 本发明涉及一种包含一种这样的元件的反射光学元件和EUV光刻器具，所述器具显示出低的污染倾向。 根据本发明，反射型光学元件具有由至少一层构成的保护层系统。 保护层系统的光学特性在间隔物和吸收体的光学特性之间，或对应于间隔物的光学特性。 在折射率方面选择具有尽可能小的虚部和实部尽可能接近1的材料导致根据保护层系统的厚度在两个厚度d之间的平台型反射率过程 1和d 2。 选择保护层系统的厚度使其小于d 2。

公开(公告)号：US5623099A

公开(公告)日：1997-04-22

申请号：US517436

申请日：1995-08-21

Applicant: Gunther Schuster ,  Udo Nothelfer

Inventor： Gunther Schuster ,  Udo Nothelfer

IPC: G01P15/08 ,  G01P15/125 ,  H01L29/84

CPC classification number: G01P15/0802 ,  G01P15/125 ,  G01P2015/0828

Abstract: This invention concerns a capacitive acceleration sensor complete with planar build-up, in particular for use as a component part of a vehicle occupant protection system within a motor vehicle. A self-supporting structure will be movably located within a hollow space between two semiconductor elements which are electrically insulated from each other but mechanically bonded, where an acceleration force acting on the inert mass of the self-supporting structure will cause a change in the distance between this self-supporting structure and the semiconductor element. This produces a change in capacity which can be evaluated by means of suitable circuitry.

Abstract translation: 本发明涉及一种具有平面建立的电容式加速度传感器，特别是用作机动车辆内的车辆乘员保护系统的组成部分。 自支撑结构将可移动地位于彼此电绝缘但机械结合的两个半导体元件之间的中空空间中，其中作用在自支撑结构的惰性质量上的加速力将导致距离的变化 在该自支撑结构和半导体元件之间。 这产生容量的变化，其可以通过合适的电路来评估。