Planar phase shifters using low coercive force and fast switching,
multilayerable ferrite
    1.
    发明授权
    Planar phase shifters using low coercive force and fast switching, multilayerable ferrite 失效
    平面移相器采用低矫顽力和快速切换,多层铁素体

    公开(公告)号:US5774025A

    公开(公告)日:1998-06-30

    申请号:US511927

    申请日:1995-08-07

    IPC分类号: C01G49/00 H01P11/00 H01P1/215

    摘要: A planar phase shifter formed of multiple layers of a ferrite. Selected layers of the ferrite are patterned with a conductor and the multiple layers of magnetic dielectric and conductor are cofired. The phase shifter is fabricated by first obtaining ferrite powder. Then, layers of the ferrite are made, preferably by tape casting. Next the ferrite layers are metallized by applying selected amounts of conductive metals in a selected pattern upon the tape. Selected numbers of vias are placed through selected layers of tape and conductive metal is placed in the vias to provide vertical connections through the layers. The tape layers are then stacked in a predetermined order and are laminated. The laminated stack of layers is then fired to a temperature of approximately 800.degree. C. to 1000.degree. C., sintering the laminated layers into one integrated structure.

    摘要翻译: 由多层铁素体形成的平面移相器。 铁氧体的选定层用导体图案化,并且多层磁介电体和导体共烧。 通过首先获得铁素体粉末来制造移相器。 然后,优选通过带铸造制造铁氧体层。 接下来,通过将选定量的导电金属以选定的图案施加在带上,将铁素体层金属化。 选定数量的通孔通过选定的磁带层放置,并且导电金属放置在通孔中以提供通过层的垂直连接。 然后将胶带层按预定顺序堆叠并层压。 然后将层叠的层叠层烧制至约800℃至1000℃的温度,将层压层烧结成一个整体结构。

    Frequency selective limiting device
    2.
    发明授权
    Frequency selective limiting device 失效
    频率选择限制装置

    公开(公告)号:US4845439A

    公开(公告)日:1989-07-04

    申请号:US169926

    申请日:1988-03-18

    IPC分类号: H01P1/215 H01P1/23

    CPC分类号: H01P1/23 H01P1/215

    摘要: A frequency selective limiting device is described incorporating a plurality of individual attenuating units spaced apart from one another in substantially parallel relation and positioned between a pair of ground planes. Each individual attenuating unit is interposed between a pair of magnetic strips. In one embodiment of the invention, each individual attenuating unit includes a microstrip conductor positioned between a dielectric substrate layer and a layer of ferrite material. In an alternate embodiment of the invention, each individual attenuating unit includes a microstrip conductor positioned between a pair of planar ferrite members, the pair of ferrite members and microstrip conductor being mechanically supported by a dielectrical substrate layer. In both embodiments of the invention, adjacent attenuating units are serially connected by microstrip jumpers to provide a flow path for microwave signals passed through the limiting device. The plurality of ferrite members in association with the plurality of magnetic strips are operable to attenuate by a predetermined level a microwave signal above a preselected threshold power level passed through the limiting device.

    摘要翻译: 描述了频率选择限制装置,其包括以基本上平行关系彼此间隔开并且位于一对接地平面之间的多个单独的衰减单元。 每个单独的衰减单元插在一对磁条之间。 在本发明的一个实施例中,每个单独的衰减单元包括位于电介质基底层和铁氧体材料层之间的微带导体。 在本发明的替代实施例中,每个单独的衰减单元包括位于一对平面铁氧体构件之间的微带线导体,一对铁氧体构件和微带导体由介电基底层机械地支撑。 在本发明的两个实施例中,相邻的衰减单元通过微带跳线串联连接,以提供通过限制装置的微波信号的流动路径。 与多个磁条相关联的多个铁氧体构件可操作以将预定水平的微波信号衰减到高于通过限制装置的预选阈值功率电平。

    Coplanar waveguide frequency selective limiter
    3.
    发明授权
    Coplanar waveguide frequency selective limiter 失效
    共面波导频率选择限制器

    公开(公告)号:US4980657A

    公开(公告)日:1990-12-25

    申请号:US414877

    申请日:1989-09-29

    IPC分类号: H01P1/215

    CPC分类号: H01P1/215

    摘要: A frequency selective limiting device is described incorporating a planar ferrite member and at least one signal-carrying conductor positioned thereon. A conductor is located on the ferrite member to confine a portion of an RF magnetic field produced by the microwave signals within the ferrite member. In one embodiment of the invention, the conductor comprises coplanar ground planes positioned adjacent to the signal-carrying conductor, thereby forming a coplanar waveguide. Alternatively a pair of coplanar conductors may form a slot line. In another embodiment a second ferrite member is positioned in confronting relationship with the first ferrite member carrying the conductors.

    摘要翻译: 描述了一种频率选择限制装置,其包括平面铁氧体构件和位于其上的至少一个信号承载导体。 导体位于铁氧体部件上,以将由微波信号产生的RF磁场的一部分限制在铁氧体部件内。 在本发明的一个实施例中,导体包括与信号承载导体相邻定位的共面接地层,从而形成共面波导。 或者,一对共面导体可以形成槽线。 在另一个实施例中,第二铁氧体元件与承载导体的第一铁氧体元件相对置地定位。

    Frequency selective signal-to-noise enhancer/limiter apparatus
    4.
    发明授权
    Frequency selective signal-to-noise enhancer/limiter apparatus 失效
    频率选择性信噪比增强器/限幅器装置

    公开(公告)号:US4595889A

    公开(公告)日:1986-06-17

    申请号:US675171

    申请日:1984-11-27

    CPC分类号: H03H2/001

    摘要: The signal-to-noise enhancer can be used in frequency memory loops to prevent loop capture by noise. If a frequency selective limiter is incorporated in the loop, more than one signal can be stored simultaneously because the limiter prevents the loop amplifier from saturating. At present, the limiter must be a separate device. The frequency selective signal-to-noise enhancer/limiter apparatus comprises an enhancer apparatus and a limiter apparatus on a single substrate, using a single pair of magnets to bias both units.

    摘要翻译: 信号噪声增强器可用于频率存储器环路,以防止噪声环路捕获。 如果频率选择限制器被并入循环中,则可以同时存储多于一个信号,因为限幅器防止环路放大器饱和。 目前,限幅器必须是一个单独的装置。 频率选择性信噪比增强器/限幅器装置包括在单个基板上的增强器装置和限幅器装置,使用一对磁体来偏置两个单元。

    Frequency selective ferrimagnetic power limiter
    5.
    发明授权
    Frequency selective ferrimagnetic power limiter 失效
    频率选择性亚铁磁功率限制器

    公开(公告)号:US4193047A

    公开(公告)日:1980-03-11

    申请号:US902130

    申请日:1978-05-02

    IPC分类号: H03G11/00 H01P1/22

    CPC分类号: H03G11/006

    摘要: Two sectoral radial resonators coupled at their centers of radii by a strip transmission line and doubly loaded with opposing ferrimagnetic spheres between the said strip transmission line and the ground planes provides a frequency selective power limiter.

    摘要翻译: 通过带状传输线在其半径中心处耦合并且在所述带状传输线和接地平面之间双重加载相对的铁磁性球体的两个扇形放大谐振器提供频率选择性功率限制器。

    High temperature superconducting low power receiver protector/clutter
automatic gain control for radar receiver
    7.
    发明授权
    High temperature superconducting low power receiver protector/clutter automatic gain control for radar receiver 失效
    高温超导低功率接收器保护器/杂波雷达接收机的自动增益控制

    公开(公告)号:US5878334A

    公开(公告)日:1999-03-02

    申请号:US724569

    申请日:1996-09-30

    IPC分类号: G01S7/285 H04B1/06 H04B1/16

    CPC分类号: G01S7/285

    摘要: The present invention provides for a low power receiver protector and stepped attenuator for conditioning a received input signal within a microwave receiver front end. The low power receiver protector includes a detector for generating a surge signal in response to the received input signal exceeding a predetermined threshold, a delay line for delaying the received input signal for fixed duration, and a limiter for reducing the voltage of the received input signal in response to the generation of the surge signal. The stepped attenuator includes a plurality of cells each having an attenuation transmission path which includes an attenuator for providing a predetermined amount of attenuation of the received input signal. Each attenuation transmission path, bypass transmission path and delay line comprise a high temperature superconductor to provide minimal loss and reduced size.

    摘要翻译: 本发明提供一种用于调节微波接收器前端内接收的输入信号的低功率接收机保护器和阶梯式衰减器。 低功率接收机保护器包括响应于接收到的输入信号超过预定阈值产生浪涌信号的检测器,用于延迟固定持续时间的接收输入信号的延迟线和用于降低接收到的输入信号的电压的限幅器 响应于浪涌信号的产生。 梯级衰减器包括多个单元,每个单元具有衰减传输路径,该衰减传输路径包括衰减器,用于提供接收的输入信号的预定量的衰减。 每个衰减传输路径,旁路传输路径和延迟线包括高温超导体,以提供最小的损耗和减小的尺寸。

    Magnetostatic wave (MSW) filter with sharp upper cut-off frequency and
channelizer formed therefrom
    8.
    发明授权
    Magnetostatic wave (MSW) filter with sharp upper cut-off frequency and channelizer formed therefrom 失效
    具有尖锐上限截止频率的磁静电(MSW)滤波器和由此形成的通道器

    公开(公告)号:US5017895A

    公开(公告)日:1991-05-21

    申请号:US405714

    申请日:1989-09-11

    IPC分类号: H03H2/00

    CPC分类号: H03H2/001

    摘要: In the present invention the upper edge of the frequency response of the magnetostatic wave (MSW) filter is sharpened. A band limiting element (BLE) is coupled to the MSW filter, preferably in the filter element output. In one embodiment the BLE absorbs signals above a certain frequency in the upper band edge of the MSW. In another embodiment, the BLE reinforces the output response.

    摘要翻译: 在本发明中,静磁波(MSW)滤波器的频率响应的上边缘被削尖。 频带限制元件(BLE)耦合到MSW滤波器,优选地在滤波器元件输出端。 在一个实施例中,BLE在MSW的上边缘边缘吸收高于特定频率的信号。 在另一个实施例中,BLE加强了输出响应。

    Enhanced coupling in ferrimagnetic microwave devices
    9.
    发明授权
    Enhanced coupling in ferrimagnetic microwave devices 失效
    亚铁磁微波器件增强耦合

    公开(公告)号:US4155053A

    公开(公告)日:1979-05-15

    申请号:US811920

    申请日:1977-06-30

    CPC分类号: H01P1/218 H03G11/006

    摘要: An improved microwave device for filtering and power limiting is described incorporating a yttrium-iron-garnet (YIG) sphere and a transmission line wherein coupling between the YIG sphere and the transmission line is enhanced by placing the YIG sphere in a groove in a ground plane under the transmission line. The current induced in the groove of the ground plane results in enhanced coupling.

    摘要翻译: 描述了用于滤波和功率限制的改进的微波装置,其结合了钇 - 铁 - 石榴石(YIG)球和传输线,其中通过将YIG球放置在接地平面中的凹槽中来增强YIG球与传输线之间的耦合 在传输线下。 在接地平面的槽中感应的电流导致耦合增强。

    Planar ferrite toroid microwave phase shifter
    10.
    发明授权
    Planar ferrite toroid microwave phase shifter 失效
    平面铁氧体环形微波移相器

    公开(公告)号:US5828271A

    公开(公告)日:1998-10-27

    申请号:US811793

    申请日:1997-03-06

    申请人: Steven N. Stitzer

    发明人: Steven N. Stitzer

    IPC分类号: H01P1/195 H01P1/32

    CPC分类号: H01P1/195

    摘要: A planar phase shifter having plural layers of ferrite forming a closed magnetic toroidal path and including internal layers of dielectric material of a relatively high dielectric constant and underlying layers of dielectric material having a relatively low dielectric constant. A stripline to slot line transition is also formed at least at one end of the device. All of the elements are formed over a ground plane and have either metallized external sidewalls or a set of metallized vias running through the outer wall portions over its length.

    摘要翻译: 一种平面移相器,具有形成闭合磁环路的多层铁氧体,并且包括具有较高介电常数的介电材料的内层和具有相对较低介电常数的介电材料的下层。 至少在设备的一端也形成带状线至槽线转换。 所有元件都形成在接地平面上,并且具有金属化的外侧壁或一组在其长度上穿过外壁部分的金属化通孔。