公开(公告)号：US08551682B2

公开(公告)日：2013-10-08

申请号：US11928728

申请日：2007-10-30

申请人： John M. Atkinson ,  Kimberly Dona Pollard ,  Gene Goebel

发明人： John M. Atkinson ,  Kimberly Dona Pollard ,  Gene Goebel

IPC分类号： C11D7/26 ,  G03F7/42

CPC分类号： G03F7/422 ,  C11D7/10 ,  C11D7/261 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/5009 ,  C11D11/0047 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02071 ,  H01L21/30604 ,  H01L21/31133

摘要： Resist stripping agents useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits and/or liquid crystals with reduced metal and metal alloy etch rates (particularly copper etch rates and TiW etch rates), are provided with methods for their use. The preferred stripping agents contain low concentrations of resorcinol or a resorcinol derivative, with or without an added copper salt, and with or without an added amine to improve solubility of the copper salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

公开(公告)号：US07632796B2

公开(公告)日：2009-12-15

申请号：US11260912

申请日：2005-10-28

申请人： Michael T. Phenis ,  Lauri Kirby Kirkpatrick ,  Raymond Chan ,  Diane Marie Scheele ,  Kimberly Dona Pollard ,  Gene Goebel

发明人： Michael T. Phenis ,  Lauri Kirby Kirkpatrick ,  Raymond Chan ,  Diane Marie Scheele ,  Kimberly Dona Pollard ,  Gene Goebel

IPC分类号： C11D7/50

CPC分类号： C11D11/0047 ,  C11D1/004 ,  C11D3/30 ,  C11D3/43 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/5009

摘要： Improved stripper solutions for removing photoresists from substrates are provided that typically have freezing points below about +15° C. and high loading capacities. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent, the amino and hydroxyl substituents attached to two different carbon atoms. Some formulation can additionally contain a secondary solvent. Methods for use of the stripping solutions are additionally provided.

摘要翻译： 提供了用于从基底去除光致抗蚀剂的改进的剥离剂溶液，其通常具有低于约+ 15℃的冰点和高负载能力。 汽提溶液包括二甲基亚砜，季铵氢氧化物和具有至少两个碳原子的链烷醇胺，至少一个氨基取代基和至少一个羟基取代基，氨基和羟基取代基连接到两个不同的碳原子上。 一些制剂可另外含有二次溶剂。 另外提供使用剥离溶液的方法。

公开(公告)号：US20090186793A1

公开(公告)日：2009-07-23

申请号：US12091808

申请日：2006-10-24

申请人： Michael T. Phenis ,  Lauri Renee Johnson ,  Raymond Chan ,  Diane Marie Scheele ,  Kimberly Dona Pollard ,  Gene Goebel

发明人： Michael T. Phenis ,  Lauri Renee Johnson ,  Raymond Chan ,  Diane Marie Scheele ,  Kimberly Dona Pollard ,  Gene Goebel

IPC分类号： C11D7/32

CPC分类号： G03F7/426 ,  C11D1/004 ,  C11D3/26 ,  C11D3/30 ,  C11D3/43 ,  C11D7/32 ,  C11D7/3218 ,  C11D7/5009 ,  C11D11/0047 ,  G03F7/425

摘要： Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, an optional secondary solvent and less than about 3 wt. % water and/or a dryness coefficient of at least about 1. Methods for the preparation and use of the improved dry stripping solutions are additionally provided.

摘要翻译： 提供了用于从基底去除一个，两个或更多个光致抗蚀剂层的改进的干燥剥离剂溶液。 汽提器溶液包括二甲亚砜，季铵氢氧化物和链烷醇胺，任选的二级溶剂和小于约3wt。 ％水和/或至少约1的干燥系数。另外提供了制备和使用改进的干燥剥离溶液的方法。

公开(公告)号：US08440389B2

公开(公告)日：2013-05-14

申请号：US12490654

申请日：2009-06-24

申请人： Kimberly Dona Pollard ,  John M. Atkinson ,  Raymond Chan ,  Michael T. Phenis ,  Allison C. Rector ,  Donald Pfettscher

发明人： Kimberly Dona Pollard ,  John M. Atkinson ,  Raymond Chan ,  Michael T. Phenis ,  Allison C. Rector ,  Donald Pfettscher

IPC分类号： G03F7/30 ,  G03F7/32 ,  C11D7/32

CPC分类号： G03F7/425 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/36 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02071 ,  Y10T428/24802

摘要： Back end of line (BEOL) stripping solutions which can be used in a stripping process that replaces etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with good efficiency and with low and acceptable metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain a polar aprotic solvent, water, an amine and a quaternary hydroxide that is not tetramethylammonium hydroxide. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

摘要翻译： 提供可用于替代蚀刻抗蚀剂灰化过程的剥离过程中的后端（BEOL）剥离溶液。 剥离溶液可用于在半导体集成电路的半导体器件上制造电路和/或形成电极，其效率高且具有低且可接受的金属蚀刻速率。 类似地提供了它们的使用方法。 优选的汽提剂含有极性非质子溶剂，水，胺和不是四甲基氢氧化铵的季铵。 还提供了根据这些方法制备的集成电路器件和电子互连结构。

公开(公告)号：US20100221503A1

公开(公告)日：2010-09-02

申请号：US12490654

申请日：2009-06-24

申请人： Kimberly Dona Pollard ,  John M. Atkinson ,  Raymond Chan ,  Michael T. Phenis ,  Allison C. Rector ,  Donald Pfettscher

发明人： Kimberly Dona Pollard ,  John M. Atkinson ,  Raymond Chan ,  Michael T. Phenis ,  Allison C. Rector ,  Donald Pfettscher

IPC分类号： C11D7/32 ,  B32B5/00

CPC分类号： G03F7/425 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/34 ,  C11D7/36 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02071 ,  Y10T428/24802

摘要： Back end of line (BEOL) stripping solutions which can be used in a stripping process that replaces etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with good efficiency and with low and acceptable metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain a polar aprotic solvent, water, an amine and a quaternary hydroxide that is not tetramethylammonium hydroxide. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

摘要翻译： 提供可用于替代蚀刻抗蚀剂灰化过程的剥离过程中的后端（BEOL）剥离溶液。 剥离溶液可用于在半导体集成电路的半导体器件上制造电路和/或形成电极，其效率高且具有低且可接受的金属蚀刻速率。 类似地提供了它们的使用方法。 优选的汽提剂含有极性非质子溶剂，水，胺和不是四甲基氢氧化铵的季铵。 还提供了根据这些方法制备的集成电路器件和电子互连结构。

公开(公告)号：US20090047609A1

公开(公告)日：2009-02-19

申请号：US11928728

申请日：2007-10-30

申请人： John M. Atkinson ,  Kimberly Dona Pollard

发明人： John M. Atkinson ,  Kimberly Dona Pollard

IPC分类号： G03C5/00 ,  G03C11/12

CPC分类号： G03F7/422 ,  C11D7/10 ,  C11D7/261 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/5009 ,  C11D11/0047 ,  G03F7/425 ,  G03F7/426 ,  H01L21/02071 ,  H01L21/30604 ,  H01L21/31133

摘要： Resist stripping agents useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits and/or liquid crystals with reduced metal and metal alloy etch rates (particularly copper etch rates and TiW etch rates), are provided with methods for their use. The preferred stripping agents contain low concentrations of resorcinol or a resorcinol derivative, with or without an added copper salt, and with or without an added amine to improve solubility of the copper salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

摘要翻译： 具有减少的金属和金属合金蚀刻速率（特别是铜蚀刻速率和TiW蚀刻速率）的半导体集成电路和/或液晶的半导体器件上制造电路和/或形成电极的抗蚀剂剥离剂提供了它们使用的方法 。 优选的汽提剂含有低浓度的间苯二酚或间苯二酚衍生物，具有或不具有加入的铜盐，以及具有或不具有加入的胺以改善铜盐的溶解度。 还提供了根据这些方法制备的集成电路器件和电子互连结构。

公开(公告)号：US08263539B2

公开(公告)日：2012-09-11

申请号：US11551826

申请日：2006-10-23

申请人： Michael T. Phenis ,  Diane Marie Scheele ,  Kimberly Dona Pollard

发明人： Michael T. Phenis ,  Diane Marie Scheele ,  Kimberly Dona Pollard

IPC分类号： C11D7/32

CPC分类号： G03F7/426 ,  C11D1/004 ,  C11D3/26 ,  C11D3/30 ,  C11D3/43 ,  C11D7/32 ,  C11D7/3218 ,  C11D7/5009 ,  C11D11/0047 ,  G03F7/425

摘要： Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, an optional secondary solvent and less than about 3 wt. % water and/or a dryness coefficient of at least about 1. Methods for the preparation and use of the improved dry stripping solutions are additionally provided.

摘要翻译： 提供了用于从基底去除一个，两个或更多个光致抗蚀剂层的改进的干燥剥离剂溶液。 汽提器溶液包括二甲亚砜，季铵氢氧化物和链烷醇胺，任选的二级溶剂和小于约3wt。 ％水和/或至少约1的干燥系数。另外提供了制备和使用改进的干燥剥离溶液的方法。

公开(公告)号：US07851427B2

公开(公告)日：2010-12-14

申请号：US12697470

申请日：2010-02-01

申请人： Kimberly Dona Pollard ,  Michael T. Phenis

发明人： Kimberly Dona Pollard ,  Michael T. Phenis

IPC分类号： C11D3/30 ,  C11D3/04 ,  C11D1/62

CPC分类号： G03F7/425 ,  G03F7/423 ,  G03F7/426 ,  H01L21/31133

摘要： Resist stripping agents, useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with reduced metal etch rates, particularly copper etch rates, are provided with methods for their use. The preferred stripping agents contain low concentrations of a copper salt with or without an added amine to improve solubility of the salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

摘要翻译： 具有减少的金属蚀刻速率，特别是铜蚀刻速率的用于制造电路和/或用于半导体集成电路的半导体器件上形成电极的抗蚀剂剥离剂提供有其使用方法。 优选的汽提剂含有低浓度的具有或不具有加入的胺的铜盐以改善盐的溶解度。 还提供了根据这些方法制备的集成电路器件和电子互连结构。

公开(公告)号：US20100137181A1

公开(公告)日：2010-06-03

申请号：US12697470

申请日：2010-02-01

申请人： Kimberly Dona Pollard ,  Michael T. Phenis

发明人： Kimberly Dona Pollard ,  Michael T. Phenis

IPC分类号： G03F7/42

CPC分类号： G03F7/425 ,  G03F7/423 ,  G03F7/426 ,  H01L21/31133

摘要： Resist stripping agents, useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with reduced metal etch rates, particularly copper etch rates, are provided with methods for their use. The preferred stripping agents contain low concentrations of a copper salt with or without an added amine to improve solubility of the salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

摘要翻译： 具有减少的金属蚀刻速率，特别是铜蚀刻速率的用于制造电路和/或用于半导体集成电路的半导体器件上形成电极的抗蚀剂剥离剂提供有其使用方法。 优选的汽提剂含有低浓度的具有或不具有加入的胺的铜盐以改善盐的溶解度。 还提供了根据这些方法制备的集成电路器件和电子互连结构。

公开(公告)号：US09243218B2

公开(公告)日：2016-01-26

申请号：US12637828

申请日：2009-12-15

申请人： Michael T. Phenis ,  Lauri Kirby Kirkpatrick ,  Raymond Chan ,  Diane Marie Scheele ,  Kimberly Dona Pollard

发明人： Michael T. Phenis ,  Lauri Kirby Kirkpatrick ,  Raymond Chan ,  Diane Marie Scheele ,  Kimberly Dona Pollard

IPC分类号： C11D7/50 ,  C11D11/00 ,  C11D1/00 ,  C11D3/30 ,  C11D3/43 ,  C11D7/32

CPC分类号： C11D11/0047 ,  C11D1/004 ,  C11D3/30 ,  C11D3/43 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/5009

摘要： Methods for using improved stripper solutions having dimethyl sulfoxide; a quaternary ammonium hydroxide; an alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent, with the amino and hydroxyl substituents being attached to two different carbon atoms; and a surfactant. Some formulation can additionally contain a secondary solvent. The stripper solutions are effective for removing photoresists from substrates, and typically have freezing points below about +15° C. and high loading capacities.

摘要翻译： 使用具有二甲基亚砜的改进的汽提溶液的方法; 氢氧化季铵; 具有至少两个碳原子的链烷醇胺，至少一个氨基取代基和至少一个羟基取代基，氨基和羟基取代基连接到两个不同的碳原子上; 和表面活性剂。 一些制剂可另外含有二次溶剂。 汽提器溶液对于从基材中除去光致抗蚀剂是有效的，并且通常具有低于约+ 15℃的冰点和高负载能力。