公开(公告)号：US6080614A

公开(公告)日：2000-06-27

申请号：US885877

申请日：1997-06-30

申请人： John Manning Sauidge Neilson ,  Linda Susan Brush ,  Frank Stensney ,  John Lawrence Benjamin ,  Anup Bhalla ,  Christopher Lawrence Rexer ,  Richard Douglas Stokes ,  Christopher Boguslow Kocon ,  Louise E. Skurkey ,  Christopher Michael Scarba

发明人： John Manning Sauidge Neilson ,  Linda Susan Brush ,  Frank Stensney ,  John Lawrence Benjamin ,  Anup Bhalla ,  Christopher Lawrence Rexer ,  Richard Douglas Stokes ,  Christopher Boguslow Kocon ,  Louise E. Skurkey ,  Christopher Michael Scarba

IPC分类号： H01L21/336 ,  H01L29/10 ,  H01L29/78 ,  H01L21/425 ,  H01L21/22 ,  H01L21/38

CPC分类号： H01L29/66712 ,  H01L29/1095 ,  H01L29/7802 ,  Y10S148/126

摘要： A method of fabricating a MOS-gated semiconductor device in which arsenic dopant is implanted through a mask to form a first layer, boron dopant is implanted through the mask to form a second layer deeper than the first layer, and in which a single diffusion step diffuses the implanted arsenic and the implanted boron at the same time to form a P+ body region with an N+ source region therein and a P type channel region.

摘要翻译： 一种制造MOS栅控半导体器件的方法，其中通过掩模注入砷掺杂剂以形成第一层，通过掩模注入硼掺杂剂以形成比第一层更深的第二层，并且其中单个扩散步骤 同时扩散注入的砷和注入的硼，以形成其中具有N +源极区的P +体区和P型沟道区。

公开(公告)号：US06818947B2

公开(公告)日：2004-11-16

申请号：US10247464

申请日：2002-09-19

申请人： Thomas E. Grebs ,  Christopher B. Kocon ,  Rodney S. Ridley, Sr. ,  Gary M. Dolny ,  Nathan Lawrence Kraft ,  Louise E. Skurkey

发明人： Thomas E. Grebs ,  Christopher B. Kocon ,  Rodney S. Ridley, Sr. ,  Gary M. Dolny ,  Nathan Lawrence Kraft ,  Louise E. Skurkey

IPC分类号： H01L2976

CPC分类号： H01L29/7813 ,  H01L29/402 ,  H01L29/407 ,  H01L29/4232 ,  H01L29/4238 ,  H01L29/7397 ,  H01L29/7811

摘要： In a power semiconductor device 10, a continuous trench has an outer circumferential portion 58 that includes a field plate and inner portions 28 that carry include one or more gate runners 34 to that the gate runners and the field plate are integral with each other. The trench structure 58, 28 is simpler to form and takes up less surface space that the separate structures of the prior art. The trench is lined with an insulator and further filled with conductive polysilicon and a top insulator.

摘要翻译： 在功率半导体器件10中，连续沟槽具有包括场板的外周部58和承载包括一个或多个栅极流道34的内部部分28，使得栅极流道和场板彼此成一体。 沟槽结构58,28更容易形成和占据现有技术的分离结构的较小的表面空间。 沟槽衬有绝缘体，并进一步填充导电多晶硅和顶绝缘体。