摘要:
A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.
摘要:
A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.
摘要:
Individual layers of a high gradient insulator (HGI) are first pre-cut to their final dimensions. The pre-cut layers are then stacked to form an assembly that is subsequently pressed into an HGI unit with the desired dimension. The individual layers are stacked, and alignment is maintained, using a sacrificial alignment tube that is removed after the stack is hot pressed. The HGI's are used as high voltage vacuum insulators in energy storage and transmission structures or devices, e.g. in particle accelerators and pulsed power systems.
摘要:
Individual layers of a high gradient insulator (HGI) are first pre-cut to their final dimensions. The pre-cut layers are then stacked to form an assembly that is subsequently pressed into an HGI unit with the desired dimension. The individual layers are stacked, and alignment is maintained, using a sacrificial alignment tube that is removed after the stack is hot pressed. The HGI's are used as high voltage vacuum insulators in energy storage and transmission structures or devices, e.g. in particle accelerators and pulsed power systems.
摘要:
A high gradient multilayer vacuum insulator (HGI) with increased resistance to vacuum arcing to improve electrical strength. In an exemplary embodiment, the HGI includes a plurality of conductive and dielectric layers stacked in alternating arrangement so that the edges of the layers together form a vacuum-insulator interface and the stack has an overall length LS. The dielectric layers each have a thickness I that is less than It I t = ( E M E BD ) 2 L S where It is the transitional dielectric layer thickness below which failure of the vacuum insulator is by vacuum arcing, EBD is the breakdown field required to initiate vacuum arcing across one of said dielectric layers, and EM is the breakdown field required to initiate surface flashover across a monolithic dielectric material of length LS.
摘要翻译:高梯度多层真空绝缘子(HGI)具有提高的抗真空电弧强度以提高电气强度。 在示例性实施例中,HGI包括以交替布置堆叠的多个导电和电介质层,使得这些层的边缘一起形成真空绝缘体界面,并且堆叠具有总长度LS。 电介质层各自具有小于I I t =(EME BD)2 LS的厚度I,其中,真空绝缘子的故障是真空电弧时的过渡介电层厚度,EBD是要求的击穿场 启动穿过所述介电层之一的真空电弧,EM是在长度为LS的整体电介质材料上引发表面闪络所需的击穿场。