System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors
    1.
    发明授权
    System and method of modulating electrical signals using photoconductive wide bandgap semiconductors as variable resistors 有权
    使用光导宽带隙半导体作为可变电阻调制电信号的系统和方法

    公开(公告)号:US08563930B2

    公开(公告)日:2013-10-22

    申请号:US12426143

    申请日:2009-04-17

    IPC分类号: G01J5/00 H01L31/09 H01L31/08

    CPC分类号: H03C1/34 H03C7/00

    摘要: A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.

    摘要翻译: 一种用于产生调制电信号的系统和方法。 该系统使用具有光电导宽带隙半导体材料结构的可变电阻器,其对入射辐射的幅度变化的传导响应在整个非饱和区域基本上是线性的,以使得能够在非雪崩模式下操作。 该系统还包括调制辐射源,例如调制激光器,用于产生调幅辐射,通过该调制辐射来引导可变电阻并调制其传导响应。 电压源和输出端口都可操作地连接到可变电阻器,使得可以通过可变电阻器在输出端口处产生电信号,该可变电阻器通过可变电阻器的激活或通过可变电阻器传播而产生。 以这种方式,电信号被可变电阻器调制以具有与幅度调制辐射基本相似的波形。

    SYSTEM AND METHOD OF MODULATING ELECTRICAL SIGNALS USING PHOTOCONDUCTIVE WIDE BANDGAP SEMICONDUCTORS AS VARIABLE RESISTORS
    2.
    发明申请
    SYSTEM AND METHOD OF MODULATING ELECTRICAL SIGNALS USING PHOTOCONDUCTIVE WIDE BANDGAP SEMICONDUCTORS AS VARIABLE RESISTORS 有权
    使用光电半导体半导体作为可变电阻调制电信号的系统和方法

    公开(公告)号:US20090261258A1

    公开(公告)日:2009-10-22

    申请号:US12426143

    申请日:2009-04-17

    IPC分类号: G01T1/24

    CPC分类号: H03C1/34 H03C7/00

    摘要: A system and method for producing modulated electrical signals. The system uses a variable resistor having a photoconductive wide bandgap semiconductor material construction whose conduction response to changes in amplitude of incident radiation is substantially linear throughout a non-saturation region to enable operation in non-avalanche mode. The system also includes a modulated radiation source, such as a modulated laser, for producing amplitude-modulated radiation with which to direct upon the variable resistor and modulate its conduction response. A voltage source and an output port, are both operably connected to the variable resistor so that an electrical signal may be produced at the output port by way of the variable resistor, either generated by activation of the variable resistor or propagating through the variable resistor. In this manner, the electrical signal is modulated by the variable resistor so as to have a waveform substantially similar to the amplitude-modulated radiation.

    摘要翻译: 一种用于产生调制电信号的系统和方法。 该系统使用具有光电导宽带隙半导体材料结构的可变电阻器,其对入射辐射的幅度变化的传导响应在整个非饱和区域基本上是线性的,以使得能够在非雪崩模式下操作。 该系统还包括调制辐射源,例如调制激光器,用于产生调幅辐射,通过该调制辐射来引导可变电阻并调制其传导响应。 电压源和输出端口都可操作地连接到可变电阻器,使得可以通过可变电阻器在输出端口处产生电信号,该可变电阻器通过可变电阻器的激活或通过可变电阻器传播而产生。 以这种方式,电信号被可变电阻器调制以具有与幅度调制辐射基本相似的波形。

    High Gradient Multilayer Vacuum Insulator
    5.
    发明申请
    High Gradient Multilayer Vacuum Insulator 审中-公开
    高梯度多层真空绝缘子

    公开(公告)号:US20100078198A1

    公开(公告)日:2010-04-01

    申请号:US12537897

    申请日:2009-08-07

    IPC分类号: H01B17/42

    CPC分类号: H05H7/22

    摘要: A high gradient multilayer vacuum insulator (HGI) with increased resistance to vacuum arcing to improve electrical strength. In an exemplary embodiment, the HGI includes a plurality of conductive and dielectric layers stacked in alternating arrangement so that the edges of the layers together form a vacuum-insulator interface and the stack has an overall length LS. The dielectric layers each have a thickness I that is less than It I t = ( E M E BD ) 2  L S where It is the transitional dielectric layer thickness below which failure of the vacuum insulator is by vacuum arcing, EBD is the breakdown field required to initiate vacuum arcing across one of said dielectric layers, and EM is the breakdown field required to initiate surface flashover across a monolithic dielectric material of length LS.

    摘要翻译: 高梯度多层真空绝缘子(HGI)具有提高的抗真空电弧强度以提高电气强度。 在示例性实施例中,HGI包括以交替布置堆叠的多个导电和电介质层,使得这些层的边缘一起形成真空绝缘体界面,并且堆叠具有总长度LS。 电介质层各自具有小于I I t =(EME BD)2 LS的厚度I,其中,真空绝缘子的故障是真空电弧时的过渡介电层厚度,EBD是要求的击穿场 启动穿过所述介电层之一的真空电弧,EM是在长度为LS的整体电介质材料上引发表面闪络所需的击穿场。