公开(公告)号：US10763371B2

公开(公告)日：2020-09-01

申请号：US15813735

申请日：2017-11-15

Applicant: Joled Inc.

Inventor： Narihiro Morosawa ,  Yoshihiro Oshima

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/417

Abstract: A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.

公开(公告)号：US09721977B2

公开(公告)日：2017-08-01

申请号：US15201426

申请日：2016-07-02

Applicant: JOLED INC.

Inventor： Narihiro Morosawa

IPC: G02F1/1339 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/786 ,  H01L27/12 ,  G02F1/133 ,  H01L27/32 ,  G02F1/1333

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2001/133357 ,  H01L27/1225 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2227/323

Abstract: A display device includes a substrate, a display element, a transistor as a drive element of the display element, and a holding capacitance element holding electric charge corresponding to a video signal, and including a first conductive film, a first semiconductor layer including an oxide semiconductor, an insulating film, and a second conductive film in order of closeness to the substrate. The display element, the transistor, and the holding capacitance element are provided on the substrate.

公开(公告)号：US20180076330A1

公开(公告)日：2018-03-15

申请号：US15813735

申请日：2017-11-15

Applicant: Joled Inc.

Inventor： Narihiro Morosawa ,  Yoshihiro Oshima

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/66

Abstract: A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof.

公开(公告)号：US20160315107A1

公开(公告)日：2016-10-27

申请号：US15201426

申请日：2016-07-02

Applicant: JOLED INC.

Inventor： Narihiro Morosawa

IPC: H01L27/12 ,  G02F1/133 ,  G02F1/1368 ,  G02F1/1343 ,  G02F1/1362 ,  H01L29/786 ,  G02F1/1339

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2001/133357 ,  H01L27/1225 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2227/323

Abstract: A display device includes a substrate, a display element, a transistor as a drive element of the display element, and a holding capacitance element holding electric charge corresponding to a video signal, and including a first conductive film, a first semiconductor layer including an oxide semiconductor, an insulating film, and a second conductive film in order of closeness to the substrate. The display element, the transistor, and the holding capacitance element are provided on the substrate.

Abstract translation: 显示装置包括基板，显示元件，作为显示元件的驱动元件的晶体管和保持与视频信号对应的电荷的保持电容元件，并且包括第一导电膜，包括氧化物的第一半导体层 半导体，绝缘膜和第二导电膜。 显示元件，晶体管和保持电容元件设置在基板上。

公开(公告)号：US09178072B2

公开(公告)日：2015-11-03

申请号：US13665487

申请日：2012-10-31

Applicant: JOLED INC.

Inventor： Narihiro Morosawa ,  Takashige Fujimori

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/417 ,  H01L29/45 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/78606

Abstract: Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film.

Abstract translation: 提供了能够提高包括氧化物半导体层的薄膜晶体管的可靠性的薄膜晶体管。 一种薄膜晶体管，包括：栅电极; 形成在栅电极上的栅极绝缘膜; 形成与所述栅极绝缘膜上的所述栅电极对应的沟道区域的氧化物半导体层; 至少形成在与氧化物半导体层上的沟道区对应的区域中的沟道保护膜; 和源/漏电极。 氧化物半导体层的顶面和侧面被栅极绝缘膜上的源极/漏极电极和沟道保护层覆盖。