Low-wear writing in a solid state memory device
    1.
    发明授权
    Low-wear writing in a solid state memory device 有权
    低磨损写入固态存储器件

    公开(公告)号:US08009471B2

    公开(公告)日:2011-08-30

    申请号:US12638830

    申请日:2009-12-15

    IPC分类号: G11C16/04

    摘要: A method includes programming a non-volatile memory. The memory includes a plurality of cells, wherein each cell is configured to store a plurality of values, wherein each of value is represented by N digits where N is an integer greater than 1, wherein each of the plurality of cells is further configured to store electric charge representing a plurality of voltage levels, and wherein each of the plurality of voltage levels represents one of the plurality of values. Programming comprises providing the plurality of voltage levels into a first group of voltage levels and a second group of voltage levels in one of the plurality of cells, wherein a highest voltage level of the first group is less than or substantially equal to a lowest voltage level of the second group, and storing, in the first group of voltage levels, electric charge representing a value comprising, at most, N-1 digits.

    摘要翻译: 一种方法包括对非易失性存储器进行编程。 存储器包括多个单元,其中每个单元被配置为存储多个值,其中每个值由N个数字表示,其中N是大于1的整数,其中多个单元中的每一个还被配置为存储 电荷表示多个电压电平,并且其中所述多个电压电平中的每一个表示所述多个值中的一个。 编程包括将多个电压电平提供到第一组电压电平和多个电池之一中的第二组电压电平,其中第一组的最高电压电平小于或基本上等于最低电压电平 并且在第一组电压电平中存储表示包括至多N-1个数字的值的电荷。

    LOW-WEAR WRITING IN A SOLID STATE MEMORY DEVICE
    2.
    发明申请
    LOW-WEAR WRITING IN A SOLID STATE MEMORY DEVICE 有权
    低密度写入固态存储器件

    公开(公告)号:US20110141833A1

    公开(公告)日:2011-06-16

    申请号:US12638830

    申请日:2009-12-15

    IPC分类号: G11C7/22

    摘要: A method includes programming a non-volatile memory. The memory includes a plurality of cells, wherein each cell is configured to store a plurality of values, wherein each of value is represented by N digits where N is an integer greater than 1, wherein each of the plurality of cells is further configured to store electric charge representing a plurality of voltage levels, and wherein each of the plurality of voltage levels represents one of the plurality of values. Programming comprises providing the plurality of voltage levels into a first group of voltage levels and a second group of voltage levels in one of the plurality of cells, wherein a highest voltage level of the first group is less than or substantially equal to a lowest voltage level of the second group, and storing, in the first group of voltage levels, electric charge representing a value comprising, at most, N−1 digits.

    摘要翻译: 一种方法包括对非易失性存储器进行编程。 存储器包括多个单元,其中每个单元被配置为存储多个值,其中每个值由N个数字表示,其中N是大于1的整数,其中多个单元中的每一个还被配置为存储 电荷表示多个电压电平,并且其中所述多个电压电平中的每一个表示所述多个值中的一个。 编程包括将多个电压电平提供到第一组电压电平和多个电池之一中的第二组电压电平,其中第一组的最高电压电平小于或基本上等于最低电压电平 并且在第一组电压电平中存储表示包括至多N-1个数字的值的电荷。

    SECURE ERASURE OF DATA FROM A NON-VOLATILE MEMORY
    3.
    发明申请
    SECURE ERASURE OF DATA FROM A NON-VOLATILE MEMORY 有权
    从非易失性存储器安全地擦除数据

    公开(公告)号:US20120278564A1

    公开(公告)日:2012-11-01

    申请号:US13098093

    申请日:2011-04-29

    IPC分类号: G06F12/00

    CPC分类号: G06F12/00 G06F12/0253

    摘要: Method and apparatus for securely erasing data from a non-volatile memory, such as but not limited to a flash memory array. In accordance with various embodiments, an extended data set to be sanitized from the memory is identified. The extended data set includes multiple copies of data having a common logical address and different physical addresses within the memory. The extended data set is sanitized in relation to a characterization of the data set. The data sanitizing operation results in the extended data set being purged from the memory and other previously stored data in the memory being retained.

    摘要翻译: 用于从非易失性存储器(例如但不限于闪速存储器阵列)安全地擦除数据的方法和装置。 根据各种实施例,识别从存储器消毒的扩展数据集。 扩展数据集包括具有公共逻辑地址和存储器内的不同物理地址的数据的多个副本。 相对于数据集的表征,扩展数据集被消毒。 数据消毒操作导致从存储器中清除扩展数据集并保留存储器中的其他先前存储的数据。

    Wear leveling technique for storage devices
    4.
    发明授权
    Wear leveling technique for storage devices 有权
    用于存储设备的磨损均衡技术

    公开(公告)号:US08051241B2

    公开(公告)日:2011-11-01

    申请号:US12437040

    申请日:2009-05-07

    IPC分类号: G06F12/00

    摘要: A method for managing wear levels in a storage device having a plurality of data blocks, the method comprising moving data to data blocks having higher erasure counts based on a constraint on static wear levelness that tightens over at least a portion of the lives of the plurality of data blocks.

    摘要翻译: 一种用于管理具有多个数据块的存储设备中的磨损水平的方法,所述方法包括基于对静态磨损水平度的约束将数据移动到具有较高擦除次数的数据块,所述静态磨损水平度紧紧地依赖于多个数据块的至少一部分寿命 的数据块。

    DATA STORAGE DEVICES AND METHODS FOR POWER-ON INITIALIZATION
    5.
    发明申请
    DATA STORAGE DEVICES AND METHODS FOR POWER-ON INITIALIZATION 有权
    数据存储设备和开机初始化的方法

    公开(公告)号:US20110138222A1

    公开(公告)日:2011-06-09

    申请号:US12630386

    申请日:2009-12-03

    CPC分类号: G06F11/1048

    摘要: Methods and systems are disclosed to generate a data map for a data storage device. A data map may be generated by scanning, during a power-on initialization process, data units of data stored on a data storage medium of a data storage device. The scanning may start from a selected data unit and proceed through the data units in an order opposite to a write order to identify a first data unit that is not fully erased. Also. an error recovery status of the first data unit may be determined based on an error correction code. A likely erased status of the first data unit may be assigned when the determined error recovery status is unrecoverable.

    摘要翻译: 公开了用于生成数据存储设备的数据图的方法和系统。 可以通过在上电初始化处理期间扫描存储在数据存储装置的数据存储介质上的数据的数据单元来生成数据图。 扫描可以从所选择的数据单元开始,并以与写入顺序相反的顺序进行数据单元,以识别未完全擦除的第一数据单元。 也。 可以基于纠错码来确定第一数据单元的错误恢复状态。 当所确定的错误恢复状态不可恢复时,可以分配第一数据单元的可能的擦除状态。

    Sequential vectored buffer management
    7.
    发明授权
    Sequential vectored buffer management 有权
    顺序向量缓冲管理

    公开(公告)号:US07406547B2

    公开(公告)日:2008-07-29

    申请号:US09894821

    申请日:2001-06-28

    IPC分类号: G06F13/14

    CPC分类号: G06F12/0866

    摘要: A method and apparatus for managing a buffer memory in a disc drive. An arbitrated buffer stores data read from, or to be written to, the disc. Sequential entries (that store pointers to the data) in the buffer, corresponding to a requested traversal, are traversed prior to voluntarily relinquishing ownership of the buffer.

    摘要翻译: 一种用于管理盘驱动器中的缓冲存储器的方法和装置。 仲裁缓冲器存储从盘读取或写入盘的数据。 对应于所请求的遍历的缓冲区中的顺序条目(存储数据的指针)在自动放弃缓冲区的所有权之前被遍历。

    GENERALIZED POSITIONAL ORDERING
    9.
    发明申请
    GENERALIZED POSITIONAL ORDERING 有权
    一般定位

    公开(公告)号:US20120260047A1

    公开(公告)日:2012-10-11

    申请号:US13081251

    申请日:2011-04-06

    IPC分类号: G06F12/00

    摘要: Implementations described and claimed herein provide a method and system for managing execution of commands for a storage device, the method comprising determining a plurality of commands to be executed for the storage device and while a storage device is executing at least one command, determining an execution order for at least two of the plurality of commands. Alternate implementation described and claimed herein provide a computer readable memory for storing a data structure, the data structure comprising a cost table comprising a number of cells, each cell containing one or more cost values related to one of a plurality of traversals between two locations on a storage device wherein each of the plurality of traversals is related to completion of one of a plurality of commands and a benefit array comprising a number of cells, each cell containing a benefit value related to completion of one of the plurality of commands.

    摘要翻译: 本文描述和要求保护的实施例提供了一种用于管理存储设备的命令的执行的方法和系统,所述方法包括确定要为存储设备执行的多个命令以及当存储设备正在执行至少一个命令时,确定执行 命令多个命令中的至少两个。 本文描述和要求保护的替代实现提供了一种用于存储数据结构的计算机可读存储器,该数据结构包括包括多个单元的成本表,每个单元包含与两个位置之间的多个遍历之一相关的一个或多个成本值 存储装置,其中所述多个遍历中的每一个与多个命令中的一个的完成相关,以及包括多个单元的益处阵列,每个单元包含与所述多个命令之一的完成相关的益处值。