公开(公告)号：US20120322188A1

公开(公告)日：2012-12-20

申请号：US13523571

申请日：2012-06-14

申请人： Jong Sun MAENG ,  Ki Ho PARK ,  Bum Joon KIM ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Boung Kyun KIM ,  Ki Sung KIM ,  Suk Ho YOON

发明人： Jong Sun MAENG ,  Ki Ho PARK ,  Bum Joon KIM ,  Hyun Seok RYU ,  Jung Hyun LEE ,  Boung Kyun KIM ,  Ki Sung KIM ,  Suk Ho YOON

IPC分类号： H01L33/32

CPC分类号： H01L33/007 ,  H01L21/67109 ,  H01L21/68764 ,  H01L21/68771 ,  H01L33/0079

摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.

摘要翻译： 提供一种制造半导体发光器件的方法，该方法包括：在半导体生长衬底上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光部分; 在要耦合到所述发光部分的所述第二导电类型半导体层上形成支撑部分; 将半导体生长衬底与发光部分分离; 以及向所述半导体生长衬底施加蚀刻气体以从所述半导体生长衬底的表面去除所述第一导电类型半导体层的残留物。