公开(公告)号：US20090223561A1

公开(公告)日：2009-09-10

申请号：US12388913

申请日：2009-02-19

申请人： Jong-Dae KIM ,  Bum-Sung Kim ,  Ju-Hwan Yun ,  Young-Hyun Lee

发明人： Jong-Dae KIM ,  Bum-Sung Kim ,  Ju-Hwan Yun ,  Young-Hyun Lee

IPC分类号： H01L31/0236 ,  H01L21/306 ,  H01L31/18

CPC分类号： H01L31/0236 ,  H01L31/02363 ,  Y02E10/50

摘要： With the present invention, two wafers for a solar cell only whose light receiving surfaces are selectively etched can be simultaneously obtained by overlapping the two wafers and performing a single-sided etching or an asymmetric etching thereon. The present invention provides a method of etching a wafer comprising: performing a single-sided etching or an asymmetric etching on the wafer, wherein the performing the single-sided etching or the asymmetric etching comprises: overlapping two wafers whose one sides face each other; and etching the overlapped two wafers, and a solar cell including the etched wafers.

摘要翻译： 通过本发明，可以通过重叠两个晶片并对其进行单面蚀刻或非对称蚀刻来同时获得仅用于其光接收表面被选择性蚀刻的太阳能电池的两个晶片。 本发明提供了一种蚀刻晶片的方法，包括：对晶片执行单面蚀刻或非对称蚀刻，其中执行单面蚀刻或非对称蚀刻包括：将两个晶片的一个面彼此重叠; 并蚀刻重叠的两个晶片，以及包括蚀刻晶片的太阳能电池。

公开(公告)号：US20110017258A1

公开(公告)日：2011-01-27

申请号：US12740327

申请日：2008-07-11

申请人： Il-Hyoung Jung ,  Ju-Hwan Yun ,  Jong-Hwan Kim

发明人： Il-Hyoung Jung ,  Ju-Hwan Yun ,  Jong-Hwan Kim

IPC分类号： H01L31/042 ,  H01L21/00

CPC分类号： H01L31/022433 ,  H01L31/18 ,  Y02E10/50

摘要： A back contact solar cell comprises a first dopant diffusion part and a second dopant diffusion part formed on a rear surface of an n-type semiconductor wafer with a predetermined distance formed therebetween by a diffusion prevention part for ensuring no contact with each other and suppressing the diffusion of dopant; and an electrode configured of an anode and a cathode each connected to the first dopant diffusion part and the second dopant diffusion part. According to the present invention, the back contact solar cell is capable of preventing light loss and improving its efficiency by forming an electrode to be positioned on a rear surface of a semiconductor wafer through a simple process and by simultaneously implementing an anode electrode and a cathode electrode on the semiconductor wafer without having a grid electrode restricting incidence of sunlight.

摘要翻译： 背接触太阳能电池包括第一掺杂剂扩散部分和第二掺杂剂扩散部分，其形成在n型半导体晶片的后表面上，其间通过防止扩散部分形成预定距离，以确保彼此不接触并抑制 掺杂剂的扩散; 以及由阳极和阴极构成的电极，每个连接到第一掺杂剂扩散部分和第二掺杂剂扩散部分。 根据本发明，背接触太阳能电池能够通过简单的工艺形成要位于半导体晶片的后表面上的电极并同时实现阳极电极和阴极，从而防止光损失并提高其效率 电极，而不具有限制阳光入射的栅电极。