摘要:
The present invention relates to a method for forming a TiNO metallic barrier layer acting as a diffusion barrier to intercept the diffusing of the Si atoms between metal layers, the method comprising the steps of: forming a TiN film through a sputtering equipment using Ar and N.sub.2 gas; implanting N.sub.2 O gas on the upper part of the TiN film; and annealing the resulting structure at N.sub.2 atmosphere for diffusing oxygen ions, thereby forming said resulting structure into uniform TiNO film.
摘要:
An electronic device manufactured by molding according to an aspect of the invention may include a driving unit supplying a signal upon being pressed and then returning to its original state; a board having the driving unit mounted thereon; a driving unit mold casing unit molded with the driving unit from a resin material such that the driving unit can be driven; and a casing molding unit molded to completely cover the board, together with the driving unit mold casing unit, to form the outer appearance.