公开(公告)号：US20180122742A1

公开(公告)日：2018-05-03

申请号：US15581782

申请日：2017-04-28

申请人： Jooyeon HA ,  Jeonggil LEE ,  Dohyung KIM ,  Keun LEE ,  HyunSeok LIM ,  Hauk HAN

发明人： Jooyeon HA ,  Jeonggil LEE ,  Dohyung KIM ,  Keun LEE ,  HyunSeok LIM ,  Hauk HAN

IPC分类号： H01L23/535 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/532

CPC分类号： H01L23/535 ,  H01L23/53266 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

摘要： A memory device includes a vertical string of nonvolatile memory cells on a substrate, along with a ground selection transistor extending between the vertical string of nonvolatile memory cells and the substrate. The ground selection transistor can have a current carrying terminal electrically coupled to a channel region of a nonvolatile memory cell in the vertical string of nonvolatile memory cells. The ground selection transistor includes a gate electrode associated with a ground selection line of the memory device. This gate electrode includes: (i) a mask pattern, (ii) a barrier metal layer of a first material extending opposite a sidewall of the mask pattern and (iii) a metal pattern of a second material different from the first material extending between at least a portion of the barrier metal layer and the mask pattern.

公开(公告)号：US20130075682A1

公开(公告)日：2013-03-28

申请号：US13331758

申请日：2011-12-20

申请人： Keun LEE

发明人： Keun LEE

IPC分类号： H01L45/00 ,  H01L21/06

CPC分类号： H01L45/1608 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1683

摘要： A phase change random access memory includes a semiconductor substrate having a bottom electrode formed over the semiconductor substrate; and a phase change layer formed over the bottom electrode. The phase change layer a first phase change layer formed over the bottom electrode and including at least one of a first element, a second element, and a third element; and a second phase change layer formed over a surface of the first phase change layer and formed of the first element to prevent an area of the first phase change layer from increasing through diffusion.

摘要翻译： 相变随机存取存储器包括在半导体衬底上形成有底电极的半导体衬底; 以及形成在底部电极上的相变层。 所述相变层形成在所述底部电极上并且包括第一元件，第二元件和第三元件中的至少一个的第一相变层; 以及形成在所述第一相变层的表面上并由所述第一元件形成以防止所述第一相变层的面积通过扩散增加的第二相变层。