公开(公告)号：US10283638B2

公开(公告)日：2019-05-07

申请号：US15086015

申请日：2016-03-30

申请人： Jorge A. Kittl ,  Ganesh Hegde ,  Robert C. Bowen ,  Mark S. Rodder

发明人： Jorge A. Kittl ,  Ganesh Hegde ,  Robert C. Bowen ,  Mark S. Rodder

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

摘要： A stack for a semiconductor device and a method for making the stack are disclosed. The stack comprises a plurality of sacrificial layers in which each sacrificial layer comprises a first lattice parameter; and at least one channel layer comprising a second lattice parameter that is different from the first lattice parameter and in which each channel layer is disposed between and in contact with two sacrificial layers. The stack is formed on an underlayer in which a sacrificial layer is in contact with the underlayer. The underlayer comprises a third lattice parameter that substantially matches the lattice parameter that the plurality of sacrificial layers and the at least one channel layer would have if the plurality of sacrificial layers and the at least one channel layer were was allow to relax coherently.

公开(公告)号：US10297673B2

公开(公告)日：2019-05-21

申请号：US14878230

申请日：2015-10-08

申请人： Jorge A. Kittl ,  Ganesh Hegde ,  Rwik Sengupta ,  Borna J. Obradovic ,  Mark S. Rodder

发明人： Jorge A. Kittl ,  Ganesh Hegde ,  Rwik Sengupta ,  Borna J. Obradovic ,  Mark S. Rodder

IPC分类号： H01L29/66 ,  H01L29/417 ,  H01L21/285 ,  H01L23/485 ,  H01L29/78 ,  H01L29/165 ,  H01L21/768

摘要： Methods of forming a semiconductor device are provided. The methods may include forming a plurality of fin-shaped channels on a substrate, forming a gate structure crossing over the plurality of fin-shaped channels and forming a source/drain adjacent a side of the gate structure. The source/drain may cross over the plurality of fin-shaped channels and may be electrically connected to the plurality of fin-shaped channels. The methods may also include forming a metallic layer on an upper surface of the source/drain and forming a conductive contact on the metallic layer opposite the source/drain. The conductive contact may have a first length in a longitudinal direction of the metallic layer that is less than a second length of the metallic layer in the longitudinal direction of the metallic layer.

公开(公告)号：US20160104787A1

公开(公告)日：2016-04-14

申请号：US14878230

申请日：2015-10-08

申请人： Jorge A. Kittl ,  Ganesh Hegde ,  Rwik Sengupta ,  Borna J. Obradovic ,  Mark S. Rodder

发明人： Jorge A. Kittl ,  Ganesh Hegde ,  Rwik Sengupta ,  Borna J. Obradovic ,  Mark S. Rodder

IPC分类号： H01L29/66 ,  H01L29/417

CPC分类号： H01L29/665 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/76843 ,  H01L23/485 ,  H01L29/165 ,  H01L29/41725 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848

摘要： Methods of forming a semiconductor device are provided. The methods may include forming a plurality of fin-shaped channels on a substrate, forming a gate structure crossing over the plurality of fin-shaped channels and forming a source/drain adjacent a side of the gate structure. The source/drain may cross over the plurality of fin-shaped channels and may be electrically connected to the plurality of fin-shaped channels. The methods may also include forming a metallic layer on an upper surface of the source/drain and forming a conductive contact on the metallic layer opposite the source/drain. The conductive contact may have a first length in a longitudinal direction of the metallic layer that is less than a second length of the metallic layer in the longitudinal direction of the metallic layer.

摘要翻译： 提供了形成半导体器件的方法。 所述方法可以包括在衬底上形成多个鳍形通道，形成跨越多个鳍形通道的栅极结构，并且在栅极结构的一侧形成源极/漏极。 源极/漏极可以跨越多个鳍状沟道并且可以电连接到多个鳍状沟道。 所述方法还可以包括在源极/漏极的上表面上形成金属层，并在与源极/漏极相对的金属层上形成导电接触。 导电接触可以在金属层的纵向方向上具有小于金属层在金属层的纵向方向上的第二长度的第一长度。