公开(公告)号：US4390394A

公开(公告)日：1983-06-28

申请号：US338605

申请日：1982-01-11

Applicant: Josef Mathuni ,  Karin Unger

Inventor： Josef Mathuni ,  Karin Unger

IPC: H01L21/302 ,  G03F7/09 ,  G03F7/40 ,  H01L21/033 ,  H01L21/3065 ,  C23F1/02 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC classification number: H01L21/0332 ,  G03F7/094 ,  G03F7/40 ,  Y10S438/949 ,  Y10S438/95

Abstract: Very fine circuit structures in microelectronics are produced by first applying a thin metal oxide layer uniformly over an entire surface of a layer to be etched, then applying a resist layer uniformly over the entire metal oxide layer and structuring such oxide layer by ion-beam etching and, utilizing the structured oxide layer as a mask, performing a dry-etching with an ion beam of the metal layer lying thereunder so as to attain structures having very unfavorable resist height to etching depth ratios.

Abstract translation: 通过首先在待蚀刻层的整个表面上均匀地施加薄的金属氧化物层，然后在整个金属氧化物层上均匀地施加抗蚀剂层并通过离子束蚀刻来构造这样的氧化物层来生产微电子中的非常精细的电路结构 并且利用结构化氧化物层作为掩模，利用其下面的金属层的离子束进行干蚀刻，以获得对蚀刻深度比非常不利的抗蚀剂高度的结构。