公开(公告)号：US5926414A

公开(公告)日：1999-07-20

申请号：US833151

申请日：1997-04-04

申请人： Joseph McDowell ,  James Harris ,  Juan Monico ,  Otto Voegli

发明人： Joseph McDowell ,  James Harris ,  Juan Monico ,  Otto Voegli

IPC分类号： G11C11/14 ,  G11C11/02 ,  G11C11/18 ,  G11C11/56 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22

CPC分类号： G11C11/5607 ,  G11C11/02 ,  G11C11/18

摘要： Magnetic integrated circuit structures exhibit desirable characteristics for purposes of realizing a magnetic semiconductor memory. In combination with a carrier-deflection-type magnetic field sensor, each of a variety of magnet structures realize a condition in which the magnetic field is substantially orthogonal to the direction of travel of carriers of a sense current, thereby achieving maximum sensitivity. In general, the magnetic structures are highly efficient and achieve a high degree of control of the magnetic field. As a result, a minimum-size device such as a MOS device suffices for purposes of sourcing a magnetizing current. By basing a magnetic memory cell on a single minimum-size MOS device, a small cell may be realized that compares favorably with a conventional DRAM or FLASH memory cell. The greater degree of control over the magnetic field afforded by the magnetic structures enables cross-coupling between cells in a memory array to be minimized.

摘要翻译： 为了实现磁性半导体存储器的目的，磁性集成电路结构表现出期望的特性。 结合载波偏转型磁场传感器，各种磁体结构中的每一个实现了磁场基本上正交于感测电流的载波的行进方向的条件，从而实现最大的灵敏度。 通常，磁性结构是高效率的并且实现了对磁场的高度控制。 结果，诸如MOS器件的最小尺寸的器件足以用于获得磁化电流。 通过将磁存储单元基于单个最小尺寸的MOS器件，可以实现与常规DRAM或闪存单元相比较的小单元。 由磁性结构提供的对磁场的更大程度的控制能够使存储器阵列中的单元之间的交叉耦合最小化。

公开(公告)号：US06326217B1

公开(公告)日：2001-12-04

申请号：US09525146

申请日：2000-03-14

申请人： Joseph McDowell ,  James Harris ,  Juan Monico ,  Otto Voegli

发明人： Joseph McDowell ,  James Harris ,  Juan Monico ,  Otto Voegli

IPC分类号： H01L21336

CPC分类号： G11C11/14 ,  G11C11/5607

摘要： The present invention, generally speaking, provides a magnetic memory element that is single domain in nature and has a geometry that mitigates the effects of half-select noise. In a preferred embodiment, the magnetic memory element takes the form of a magnetic post or tube having an aspect ratio in the range of 2:1 (more preferably 4:1). The outside diameter of the magnetic tube or post is preferably less than 0.8 microns, more preferably 0.6 microns or less. The magnetic post or tube then functions as a single magnetic domain. In the case of a magnetic tube, the skin of the tube is formed of a magnetic material and the interior of the tube is formed of a non-magnetic material. Suitable non-magnetic materials include copper, gold and silicon. The coercivity of the magnetic tube structure may be adjusted by adjusting the thickness of the magnetic skin. As a result, the magnetic memory element is readily scalable to smaller geometries as lithographic techniques improve. The combination of very small, single-domain size and a relatively large aspect ratio results in uniquely desirable properties. Current levels within any reasonable expectation operate to switch the state of the magnetic tube only when the magnetic tube is destabilized by running current through it. With current flowing through the magnetic tube, its state may be readily changed by running modest currents in opposite directions through two parallel conductors, one on each side of the magnetic tube. When the magnetic tube is switched, the single domain nature of the magnetic tube produces a signal that is typically 10-15 times stronger than signals produced by conventional magnetic memory elements. The magnetic tube functions as a vertical magnetic field generator and may be formed in intimate proximity to a magnetic field sensor such as above the gate of a magFET.

摘要翻译： 本发明一般地提供一种本质上是单域的磁存储元件，并具有减轻半选择噪声影响的几何形状。 在优选实施例中，磁存储元件采用长度比在2:1（更优选4:1）范围内的磁柱或管的形式。 磁性管或柱的外径优选小于0.8微米，更优选小于或等于0.6微米。 磁柱或管然后用作单个磁畴。 在磁性管的情况下，管的皮肤由磁性材料形成，并且管的内部由非磁性材料形成。 合适的非磁性材料包括铜，金和硅。 可以通过调节磁性皮肤的厚度来调节磁性管结构的矫顽力。 结果，随着光刻技术的改进，磁存储元件容易缩放到较小的几何形状。 非常小的单畴尺寸和相对大的纵横比的组合产生了独特的期望特性。 任何合理期望的电流水平只有当磁管通过运行电流而不稳定时才能切换磁管的状态。 随着电流流经磁管，其状态可以通过两个平行的导体在磁极管的每一侧一个相反的方向运行适度的电流而容易地改变。 当磁管被切换时，磁管的单畴性质产生通常比常规磁存储元件产生的信号强10-15倍的信号。 磁管用作垂直磁场发生器，并且可以紧密地形成在诸如MagFET的栅极之上的磁场传感器附近。

公开(公告)号：US6051441A

公开(公告)日：2000-04-18

申请号：US83272

申请日：1998-05-12

申请人： Joseph McDowell ,  James Harris ,  Juan Monico ,  Otto Voegli

发明人： Joseph McDowell ,  James Harris ,  Juan Monico ,  Otto Voegli

IPC分类号： G11C11/14 ,  G11C11/56 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L21/00 ,  G11C11/15 ,  H01L29/82 ,  H01L43/00

CPC分类号： G11C11/14 ,  G11C11/5607

摘要： The present invention, generally speaking, provides a magnetic memory element that is single domain in nature and has a geometry that mitigates the effects of half-select noise. In a preferred embodiment, the magnetic memory element takes the form of a magnetic post or tube having an aspect ratio in the range of 2:1 (more preferably 4:1). The outside diameter of the magnetic tube or post is preferably less than 0.8 microns, more preferably 0.6 microns or less. The magnetic post or tube then functions as a single magnetic domain. In the case of a magnetic tube, the skin of the tube is formed of a magnetic material and the interior of the tube is formed of a non-magnetic material. Suitable non-magnetic materials include copper, gold and silicon. The coercivity of the magnetic tube structure may be adjusted by adjusting the thickness of the magnetic skin. As a result, the magnetic memory element is readily scalable to smaller geometries as lithographic techniques improve. The combination of very small, single-domain size and a relatively large aspect ratio results in uniquely desirable properties. Current levels within any reasonable expectation operate to switch the state of the magnetic tube only when the magnetic tube is destabilized by running current through it. With current flowing through the magnetic tube, its state may be readily changed by running modest currents in opposite directions through two parallel conductors, one on each side of the magnetic tube. When the magnetic tube is switched, the single domain nature of the magnetic tube produces a signal that is typically 10-15 times stronger than signals produced by conventional magnetic memory elements. The magnetic tube functions as a vertical magnetic field generator and may be formed in intimate proximity to a magnetic field sensor such as above the gate of a magFET.

公开(公告)号：US06452239B1

公开(公告)日：2002-09-17

申请号：US09525453

申请日：2000-03-14

申请人： Joseph McDowell ,  James Harris ,  Juan Monico ,  Otto Voegli

发明人： Joseph McDowell ,  James Harris ,  Juan Monico ,  Otto Voegli

IPC分类号： H01L2982

CPC分类号： G11C11/14 ,  G11C11/5607

摘要： The present invention, generally speaking, provides a magnetic memory element that is single domain in nature and has a geometry that mitigates the effects of half-select noise. In a preferred embodiment, the magnetic memory element takes the form of a magnetic post or tube having an aspect ratio in the range of 2:1 (more preferably 4:1). The outside diameter of the magnetic tube or post is preferably less than 0.8 microns, more preferably 0.6 microns or less. The magnetic post or tube then functions as a single magnetic domain. In the case of a magnetic tube, the skin of the tube is formed of a magnetic material and the interior of the tube is formed of a non-magnetic material. Suitable non-magnetic materials include copper, gold and silicon. The coercivity of the magnetic tube structure may be adjusted by adjusting the thickness of the magnetic skin. As a result, the magnetic memory element is readily scalable to smaller geometries as lithographic techniques improve. The combination of very small, single-domain size and a relatively large aspect ratio results in uniquely desirable properties. Current levels within any reasonable expectation operate to switch the state of the magnetic tube only when the magnetic tube is destabilized by running current through it. With current flowing through the magnetic tube, its state may be readily changed by running modest currents in opposite directions through two parallel conductors, one on each side of the magnetic tube. When the magnetic tube is switched, the single domain nature of the magnetic tube produces a signal that is typically 10-15 times stronger than signals produced by conventional magnetic memory elements. The magnetic tube functions as a vertical magnetic field generator and may be formed in intimate proximity to a magnetic field sensor such as above the gate of a magFET.

摘要翻译： 本发明一般地提供一种本质上是单域的磁存储元件，并具有减轻半选择噪声影响的几何形状。 在优选实施例中，磁存储元件采用长度比在2:1（更优选4:1）范围内的磁柱或管的形式。 磁性管或柱的外径优选小于0.8微米，更优选小于或等于0.6微米。 磁柱或管然后用作单个磁畴。 在磁性管的情况下，管的皮肤由磁性材料形成，并且管的内部由非磁性材料形成。 合适的非磁性材料包括铜，金和硅。 可以通过调节磁性皮肤的厚度来调节磁性管结构的矫顽力。 结果，随着光刻技术的改进，磁存储元件容易缩放到较小的几何形状。 非常小的单畴尺寸和相对大的纵横比的组合产生了独特的期望特性。 任何合理期望的电流水平只有当磁管通过运行电流而不稳定时才能切换磁管的状态。 随着电流流经磁管，其状态可以通过两个平行的导体在磁极管的每一侧一个相反的方向运行适度的电流而容易地改变。 当磁管被切换时，磁管的单畴性质产生通常比常规磁存储元件产生的信号强10-15倍的信号。 磁管用作垂直磁场发生器，并且可以紧密地形成在诸如MagFET的栅极之上的磁场传感器附近。

公开(公告)号：US06388918B1

公开(公告)日：2002-05-14

申请号：US09525147

申请日：2000-03-14

申请人： Joseph McDowell ,  James Harris ,  Juan Monico ,  Otto Voegli

发明人： Joseph McDowell ,  James Harris ,  Juan Monico ,  Otto Voegli

IPC分类号： G11C1114

CPC分类号： G11C11/14 ,  G11C11/5607

摘要： The present invention, generally speaking, provides a magnetic memory element that is single domain in nature and has a geometry that mitigates the effects of half-select noise. In a preferred embodiment, the magnetic memory element takes the form of a magnetic post or tube having an aspect ratio in the range of 2:1 (more preferably 4:1). The outside diameter of the magnetic tube or post is preferably less than 0.8 microns, more preferably 0.6 microns or less. The magnetic post or tube then functions as a single magnetic domain. In the case of a magnetic tube, the skin of the tube is formed of a magnetic material and the interior of the tube is formed of a non-magnetic material. Suitable non-magnetic materials include copper, gold and silicon. The coercivity of the magnetic tube structure may be adjusted by adjusting the thickness of the magnetic skin. As a result, the magnetic memory element is readily scalable to smaller geometries as lithographic techniques improve. The combination of very small, single-domain size and a relatively large aspect ratio results in uniquely desirable properties. Current levels within any reasonable expectation operate to switch the state of the magnetic tube only when the magnetic tube is destabilized by running current through it. With current flowing through the magnetic tube, its state may be readily changed by running modest currents in opposite directions through two parallel conductors, one on each side of the magnetic tube. When the magnetic tube is switched, the single domain nature of the magnetic tube produces a signal that is typically 10-15 times stronger than signals produced by conventional magnetic memory elements. The magnetic tube functions as a vertical magnetic field generator and may be formed in intimate proximity to a magnetic field sensor such as above the gate of a magFET.

摘要翻译： 本发明一般地提供一种本质上是单域的磁存储元件，并具有减轻半选择噪声影响的几何形状。 在优选实施例中，磁存储元件采用长度比在2:1（更优选4:1）范围内的磁柱或管的形式。 磁性管或柱的外径优选小于0.8微米，更优选小于或等于0.6微米。 磁柱或管然后用作单个磁畴。 在磁性管的情况下，管的皮肤由磁性材料形成，并且管的内部由非磁性材料形成。 合适的非磁性材料包括铜，金和硅。 可以通过调节磁性皮肤的厚度来调节磁性管结构的矫顽力。 结果，随着光刻技术的改进，磁存储元件容易缩放到较小的几何形状。 非常小的单畴尺寸和相对大的纵横比的组合产生了独特的期望特性。 任何合理期望的电流水平只有当磁管通过运行电流而不稳定时才能切换磁管的状态。 随着电流流经磁管，其状态可以通过两个平行的导体在磁极管的每一侧一个相反的方向运行适度的电流而容易地改变。 当磁管被切换时，磁管的单畴性质产生通常比常规磁存储元件产生的信号强10-15倍的信号。 磁管用作垂直磁场发生器，并且可以紧密地形成在诸如MagFET的栅极之上的磁场传感器附近。