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公开(公告)号:US20140370699A1
公开(公告)日:2014-12-18
申请号:US14145188
申请日:2013-12-31
申请人: Ju-Youn Kim , Chul-Woong Lee , Tae-Sun Kim , Sang-Duk Park , Bum-Joon Youn , Tae-Won Ha
发明人: Ju-Youn Kim , Chul-Woong Lee , Tae-Sun Kim , Sang-Duk Park , Bum-Joon Youn , Tae-Won Ha
IPC分类号: H01L21/308 , H01L21/28
CPC分类号: H01L21/28008 , H01L21/31138 , H01L21/32139 , H01L21/823431 , H01L21/82345 , H01L29/4966 , H01L29/517 , H01L29/66545
摘要: A method of fabricating a semiconductor device includes forming an interlayer insulating layer on a substrate, the interlayer insulating layer including a first trench and a second trench, forming a first conductive layer along sidewall surfaces and bottom surface of the first trench and forming a second conductive layer along sidewall surfaces and bottom surface of the second trench, forming a mask pattern on the second conductive layer, the mask pattern filling the second trench and being a bottom anti-reflective coating (BARC), and removing the first conductive layer using the mask pattern.
摘要翻译: 制造半导体器件的方法包括在衬底上形成层间绝缘层,所述层间绝缘层包括第一沟槽和第二沟槽,沿着所述第一沟槽的侧壁表面和底表面形成第一导电层,并形成第二导电 层,沿着第二沟槽的侧壁表面和底表面,在第二导电层上形成掩模图案,掩模图案填充第二沟槽并且是底部抗反射涂层(BARC),并且使用掩模去除第一导电层 模式。
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公开(公告)号:US09379019B2
公开(公告)日:2016-06-28
申请号:US14701859
申请日:2015-05-01
申请人: Bum-Joon Youn , Tae-Sun Kim , Yeo-Jin Lee , Yu-Ra Kim , Jin-Man Kim , Jae-Kyung Seo , Ki-Man Lee
发明人: Bum-Joon Youn , Tae-Sun Kim , Yeo-Jin Lee , Yu-Ra Kim , Jin-Man Kim , Jae-Kyung Seo , Ki-Man Lee
IPC分类号: H01L21/8234 , H01L21/02 , H01L21/027 , H01L21/265 , H01L29/66 , H01L21/762 , H01L21/266
CPC分类号: H01L21/823431 , H01L21/26513 , H01L21/76224 , H01L21/76229 , H01L21/823418 , H01L21/823437 , H01L21/823481 , H01L29/0847 , H01L29/66545 , H01L29/66636
摘要: In a method, an isolation layer pattern is formed on a substrate to define first and second active fins. An ARC layer is formed on the isolation layer pattern to at least partially cover sidewalls of the first and second active fins. A level of a top surface of the ARC layer is equal to or less than, and equal to or greater than half of, those of the first and second active fins. A photoresist layer is formed on the first and second active fins and the ARC layer. A portion of the photoresist layer is removed to form a photoresist pattern covering the first active fin and exposing the second active fin. A portion of the ARC layer under the removed portion of the photoresist layer is removed to form an ARC layer pattern. Impurities are implanted into the exposed second active fin to form an impurity region.
摘要翻译: 在一种方法中,在衬底上形成隔离层图案以限定第一和第二活性鳍片。 在隔离层图案上形成ARC层,以至少部分地覆盖第一和第二活性鳍片的侧壁。 ARC层的顶表面的水平等于或小于等于或大于第一和第二活性翅片的一半的水平。 在第一和第二活性鳍片和ARC层上形成光致抗蚀剂层。 去除光致抗蚀剂层的一部分以形成覆盖第一活性鳍片并暴露第二活性鳍片的光致抗蚀剂图案。 除去光致抗蚀剂层去除部分之下的ARC层的一部分以形成ARC层图案。 将杂质植入暴露的第二活性鳍中以形成杂质区。
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