公开(公告)号：US08354711B2

公开(公告)日：2013-01-15

申请号：US12806203

申请日：2010-01-11

申请人： Jun Zeng ,  Mohamed N. Darwish ,  Richard A Blanchard

发明人： Jun Zeng ,  Mohamed N. Darwish ,  Richard A Blanchard

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811

摘要： Improved MOSFET structures and processes, where multiple polysilicon embedded regions are introduced into the n+ source contact area. A top poly Field Plate is used to shield the electric field from penetrating into the channel, so that a very short channel can be used without jeopardizing the device drain-source leakage current. A bottom poly Field Plate is used to modulate the electric field distribution in the drift region such that a more uniform field distribution can be obtained.

摘要翻译： 改进的MOSFET结构和工艺，其中多个多晶硅嵌入区域被引入到n +源极接触区域。 顶部聚场板用于屏蔽电场穿透通道，使得可以使用非常短的通道，而不会危及器件漏源漏电流。 底部多场板用于调制漂移区域中的电场分布，使得可以获得更均匀的场分布。