ACTIVE PIXEL SENSOR
    1.
    发明申请
    ACTIVE PIXEL SENSOR 有权
    主动像素传感器

    公开(公告)号:US20060192261A1

    公开(公告)日:2006-08-31

    申请号:US10906581

    申请日:2005-02-25

    IPC分类号: H01L27/14

    摘要: An active pixel sensor is proposed by the invention. The position of the gate of the reset transistor is kept away from the interface of the isolation region and the silicon so that the depletion region does not reach the isolation. Accordingly, dark currents caused by isolation region damages can be avoided.

    摘要翻译: 本发明提出一种有源像素传感器。 复位晶体管的栅极的位置远离隔离区域和硅的界面,使得耗尽区域不能达到隔离。 因此,可以避免由隔离区域损坏引起的暗电流。

    PHOTO DIODE AND RELATED METHOD FOR FABRICATION
    2.
    发明申请
    PHOTO DIODE AND RELATED METHOD FOR FABRICATION 有权
    照相二极管及制造方法

    公开(公告)号:US20070249077A1

    公开(公告)日:2007-10-25

    申请号:US11379228

    申请日:2006-04-19

    IPC分类号: H01L21/00

    摘要: A method for fabricating a photo diode first involves providing a substrate. A doping area is then formed on the substrate. Afterwards, a dielectric layer, and a first poly-silicon layer are formed on the substrate. An opening is then formed to expose a surface of the doping area. A second poly-silicon layer is formed on the first poly-silicon layer and within the opening. The second poly-silicon layer is patterned to form a wire, while the first poly-silicon layer is patterned to form a gate. Finally, a source/drain is formed.

    摘要翻译: 首先制造光电二极管的方法包括提供衬底。 然后在衬底上形成掺杂区域。 之后,在基板上形成电介质层和第一多晶硅层。 然后形成开口以暴露掺杂区域的表面。 在第一多晶硅层上和开口内形成第二多晶硅层。 图案化第二多晶硅层以形成导线,同时将第一多晶硅层图案化以形成栅极。 最后,形成源极/漏极。

    Active pixel sensor
    3.
    发明授权
    Active pixel sensor 有权
    有源像素传感器

    公开(公告)号:US07564083B2

    公开(公告)日:2009-07-21

    申请号:US10906581

    申请日:2005-02-25

    IPC分类号: H01L31/062

    摘要: An active pixel sensor is proposed by the invention. The position of the gate of the reset transistor is kept away from the interface of the isolation region and the silicon so that the depletion region does not reach the isolation. Accordingly, dark currents caused by isolation region damages can be avoided.

    摘要翻译: 本发明提出一种有源像素传感器。 复位晶体管的栅极的位置远离隔离区域和硅的界面,使得耗尽区域不能达到隔离。 因此,可以避免由隔离区域损坏引起的暗电流。

    Photo diode and related method for fabrication
    4.
    发明授权
    Photo diode and related method for fabrication 有权
    光电二极管及相关制造方法

    公开(公告)号:US07518171B2

    公开(公告)日:2009-04-14

    申请号:US11379228

    申请日:2006-04-19

    IPC分类号: H01L31/062 H01L31/113

    摘要: A method for fabricating a photo diode first involves providing a substrate. A doping area is then formed on the substrate. Afterwards, a dielectric layer, and a first poly-silicon layer are formed on the substrate. An opening is then formed to expose a surface of the doping area. A second poly-silicon layer is formed on the first poly-silicon layer and within the opening. The second poly-silicon layer is patterned to form a wire, while the first poly-silicon layer is patterned to form a gate. Finally, a source/drain is formed.

    摘要翻译: 首先制造光电二极管的方法包括提供衬底。 然后在衬底上形成掺杂区域。 之后,在基板上形成电介质层和第一多晶硅层。 然后形成开口以暴露掺杂区域的表面。 在第一多晶硅层上和开口内形成第二多晶硅层。 图案化第二多晶硅层以形成导线,同时将第一多晶硅层图案化以形成栅极。 最后,形成源极/漏极。

    Tee Joint Component and Breast Pump with Same

    公开(公告)号:US20170080135A1

    公开(公告)日:2017-03-23

    申请号:US15021949

    申请日:2015-09-29

    申请人: Junbo Chen

    发明人: Junbo Chen

    IPC分类号: A61M1/06

    CPC分类号: A61M1/062 A61M1/06

    摘要: The present invention relates the field of mother and baby products, in particular to a breast pump and components thereof. The tee joint component is different from others in that the tee joint component is only provided with one negative pressure input interface; a milking shield and a milk outflow end disposed on the tee joint component are both integrated with the body of the tee joint component; the milk outflow end is a V-shaped one-way valve; the whole tee joint component is made of a flexible material. The cross-sectional thickness of both ends is greater than that of the middle region of the tee joint component. The flexible material is food-grade silicone rubber.

    Photo diode and related method for fabrication
    6.
    发明授权
    Photo diode and related method for fabrication 有权
    光电二极管及相关制造方法

    公开(公告)号:US07863082B2

    公开(公告)日:2011-01-04

    申请号:US12393048

    申请日:2009-02-26

    摘要: A method for fabricating a photo diode first involves providing a substrate. A doping area is then formed on the substrate. Afterwards, a dielectric layer, and a first poly-silicon layer are formed on the substrate. An opening is then formed to expose a surface of the doping area. A second poly-silicon layer is formed on the first poly-silicon layer and within the opening. The second poly-silicon layer is patterned to form a wire, while the first poly-silicon layer is patterned to form a gate. Finally, a source/drain is formed.

    摘要翻译: 首先制造光电二极管的方法包括提供衬底。 然后在衬底上形成掺杂区域。 之后,在基板上形成电介质层和第一多晶硅层。 然后形成开口以暴露掺杂区域的表面。 在第一多晶硅层上和开口内形成第二多晶硅层。 图案化第二多晶硅层以形成导线,同时将第一多晶硅层图案化以形成栅极。 最后,形成源极/漏极。

    PHOTO DIODE AND RELATED METHOD FOR FABRICATION
    7.
    发明申请
    PHOTO DIODE AND RELATED METHOD FOR FABRICATION 有权
    照相二极管及制造方法

    公开(公告)号:US20090162971A1

    公开(公告)日:2009-06-25

    申请号:US12393048

    申请日:2009-02-26

    IPC分类号: H01L31/18 H01L21/00

    摘要: A method for fabricating a photo diode first involves providing a substrate. A doping area is then formed on the substrate. Afterwards, a dielectric layer, and a first poly-silicon layer are formed on the substrate. An opening is then formed to expose a surface of the doping area. A second poly-silicon layer is formed on the first poly-silicon layer and within the opening. The second poly-silicon layer is patterned to form a wire, while the first poly-silicon layer is patterned to form a gate. Finally, a source/drain is formed.

    摘要翻译: 首先制造光电二极管的方法包括提供衬底。 然后在衬底上形成掺杂区域。 之后,在基板上形成电介质层和第一多晶硅层。 然后形成开口以暴露掺杂区域的表面。 在第一多晶硅层上和开口内形成第二多晶硅层。 图案化第二多晶硅层以形成导线,同时将第一多晶硅层图案化以形成栅极。 最后,形成源极/漏极。

    Method of manufacturing a self-aligned guard ring of a photo diode
    8.
    发明授权
    Method of manufacturing a self-aligned guard ring of a photo diode 失效
    制造光电二极管的自对准保护环的方法

    公开(公告)号:US07008815B1

    公开(公告)日:2006-03-07

    申请号:US10711780

    申请日:2004-10-05

    IPC分类号: H01L21/00

    摘要: A method of manufacturing a self-aligned guard ring of a photo diode. The method includes defining a photo diode region on a semiconductor substrate and an isolation matter surrounding the photo diode region, forming a photo sensor in the photo diode region, covering a first mask on the photo sensor, forming a spacer around the first mask, covering a second mask on an edge of the isolation matter, and utilizing the first mask, the second mask, and the spacer to form a self-aligned guard ring surrounding the photo sensor.

    摘要翻译: 一种制造光电二极管的自对准保护环的方法。 该方法包括在半导体衬底上限定光电二极管区域和围绕光电二极管区域的隔离物质,在光电二极管区域中形成光电传感器,覆盖光电传感器上的第一掩模,在第一掩模周围形成间隔物,覆盖 在隔离物的边缘上的第二掩模,并且利用第一掩模,第二掩模和间隔物以形成围绕光传感器的自对准保护环。

    Optical terminal for optical fibers with output angle control
    9.
    发明授权
    Optical terminal for optical fibers with output angle control 失效
    具有输出角度控制的光纤终端

    公开(公告)号:US06393191B1

    公开(公告)日:2002-05-21

    申请号:US09285952

    申请日:1999-04-01

    IPC分类号: G02B600

    摘要: An optical terminal using a capillary with a central opening or a bore of a selected cross section and having an insertion opening and a coupling opening. The optical terminal has a light-guiding element, e.g., a lens, positioned in front of the coupling opening. Optical fibers having adjusted cross sections along a fitting length are inserted into the bore such that they are wedged inside it, their tips are positioned at the coupling opening and their cores are offset by a specific distance or offset from the optical axis of the light guiding element. A number of fibers including optical and reinforcement fibers can be wedged in the bore in this manner to ensure a specific offset between the cores of the optical fibers and the optical axis. Precise control of the offset between the cores and the optical axis permits one to accurately control an output angle of light beams issuing from the optical fibers and exiting the optical terminal through the light guiding element.

    摘要翻译: 一种光学终端,其使用具有选定横截面的中心开口或孔的毛细管并具有插入开口和联接开口。 光学终端具有位于联接开口前方的导光元件,例如透镜。 具有沿着配合长度的调整的横截面的光纤被插入到孔中,使得它们楔入其内,它们的尖端位于联接开口处,并且它们的芯偏移与光导向的光轴的特定距离或偏移 元件。 包括光纤和增强纤维的许多纤维可以以这种方式楔入孔中,以确保光纤芯与光轴之间的特定偏移。 通过精确控制芯体与光轴之间的偏移,可以精确地控制从光纤发出的光束的输出角度,并通过导光元件离开光学终端。