公开(公告)号：US06703322B2

公开(公告)日：2004-03-09

申请号：US10064668

申请日：2002-08-05

申请人： June-Min Yao ,  Cheng-Shun Chen ,  Shu-Ya Hsu

发明人： June-Min Yao ,  Cheng-Shun Chen ,  Shu-Ya Hsu

IPC分类号： H01L2131

CPC分类号： H01L21/26506 ,  H01L21/3185 ,  H01L21/823462 ,  Y10S438/981

摘要： Multiple oxide layers with different thicknesses are formed on a semiconductor substrate with a silicon surface, having a first and second region. A sacrificial oxide layer is formed on the silicon surface to cover both the first region and the second region, with a mask layer formed on the surface of the sacrificial oxide layer. By defining and patterning the mask layer, a first opening and a second opening, having predetermined surface areas, are formed in portions of the first and second regions of the mask layer to expose portions of the. The sacrificial oxide layer has a surface area equal to the first predetermined surface area, and portions of the sacrificial oxide layer having a surface area equal to the second predetermined surface area. A linear nitrogen doping process is then performed to simultaneously implant nitrogen ions with a first and second predetermined concentration into the first and second region, through the first opening and the second opening, respectively. Thereafter, the mask layer and the sacrificial oxide layer are removed, respectively. An oxidation process is performed to two silicon oxide layers with different thicknesses in the first and second regions.

摘要翻译： 在具有第一和第二区域的具有硅表面的半导体衬底上形成具有不同厚度的多个氧化物层。 牺牲氧化物层形成在硅表面上，以覆盖第一区域和第二区域，掩模层形成在牺牲氧化物层的表面上。 通过限定和图案化掩模层，具有预定表面积的第一开口和第二开口形成在掩模层的第一和第二区域的一部分中，以暴露部分。 牺牲氧化物层的表面积等于第一预定表面积，牺牲氧化物层的表面积等于第二预定表面积的部分。 然后进行线性氮掺杂过程，以分别通过第一开口和第二开口将第一和第二预定浓度的氮离子注入第一和第二区域。 此后，分别去除掩模层和牺牲氧化物层。 对第一和​​第二区域中具有不同厚度的两个氧化硅层进行氧化处理。

公开(公告)号：US06602792B2

公开(公告)日：2003-08-05

申请号：US09920011

申请日：2001-08-02

申请人： Shu-Ya Hsu

发明人： Shu-Ya Hsu

IPC分类号： H01L21302

CPC分类号： H01L21/76232

摘要： The invention utilizes introductions of oxygen and hydroxyl to perform an in situ steam generated (ISSG) process to anneal and reoxidize a conventional sidewall oxide layer in a shallow trench isolation. The ISSG annealing process renders the conventional sidewall oxide layer much less stress. The electrical property of the active regions and the isolation quality between the active regions can be assured.

公开(公告)号：US06503815B1

公开(公告)日：2003-01-07

申请号：US09920757

申请日：2001-08-03

申请人： Shu-Ya Hsu

发明人： Shu-Ya Hsu

IPC分类号： H01L2176

CPC分类号： H01L21/76235

摘要： The invention utilizes introductions of oxygen and hydroxyl to perform an in situ steam generated process to reoxidize a conventional sidewall oxide layer and density the oxide in a shallow trench isolation. The ISSG process renders the conventional sidewall oxide layer much less stress and encroachment. The electrical property of the active regions and the isolation quality between the active regions can be assured. The ISSG process can densify the oxide in a shallow trench isolation to prevent the oxide from being lost in the following clean process.

摘要翻译： 本发明利用氧和羟基的引入来进行原位蒸汽生成过程，以重新氧化常规的侧壁氧化物层并在浅沟槽隔离中密集氧化物。 ISSG工艺使常规的侧壁氧化物层具有更小的应力和侵蚀。 活性区域的电性能和活性区域之间的隔离质量可以确保。 ISSG工艺可以在浅沟槽隔离中使氧化物致密化，以防止氧化物在以下清洁过程中丢失。