公开(公告)号：US20090055579A1

公开(公告)日：2009-02-26

申请号：US12230142

申请日：2008-08-25

申请人： June-hong Park ,  Jae-yong Jeong ,  Chi-weon Yoon

发明人： June-hong Park ,  Jae-yong Jeong ,  Chi-weon Yoon

IPC分类号： G06F12/02

CPC分类号： G06F12/0246 ,  G06F2212/7202 ,  G11C11/5628 ,  G11C16/10 ,  G11C2216/14

摘要： Provided is a semiconductor memory device for simultaneously programming a plurality of banks. The semiconductor memory device includes: a memory cell array comprising a plurality of banks; a plurality of data buffers storing a plurality of pieces of program data to be programmed in the corresponding banks; and a plurality of scan latches configured to scan the plurality of program data transmitted from the corresponding data buffers, and configured to generate 1st through n−1th sub program data, n being a natural number greater than 2.

摘要翻译： 提供了一种用于同时编程多个存储体的半导体存储器件。 半导体存储器件包括：包括多个存储体的存储单元阵列; 多个数据缓冲器，存储要在对应的存储体中编程的多个程序数据; 以及多个扫描锁存器，被配置为扫描从相应的数据缓冲器发送的多个节目数据，并且被配置为生成第1到第n个第1个子节目数据，n是大于2的自然数。

公开(公告)号：US08189386B2

公开(公告)日：2012-05-29

申请号：US12458437

申请日：2009-07-13

申请人： June-hong Park ,  Chi-weon Yoon

发明人： June-hong Park ,  Chi-weon Yoon

IPC分类号： G11C11/34

CPC分类号： G11C11/5628 ,  G11C16/10 ,  G11C16/3454 ,  G11C16/3459 ,  G11C29/00 ,  G11C2211/5621

摘要： A programming method for a non-volatile memory device includes performing a programming operation to program memory cells, when the programmed memory cells are determined to include memory cells that failed to be programmed and when a current program loop is a maximum program loop, determining whether a number of the memory cells that failed to be programmed corresponds to a number of memory cells that can successfully undergo ECC (error checking and correction), when the number of the memory cells that failed to be programmed is less than the number of the memory cells that can successfully undergo ECC, reading data so as to determine whether a number of error bits of the memory cells that failed to be programmed can successfully undergo ECC, and, when the memory cells that failed to be programmed can successfully undergo ECC, ending a programming operation.

摘要翻译： 用于非易失性存储器件的编程方法包括执行编程操作以对存储器单元进行编程，当编程存储器单元被确定为包括不能被编程的存储器单元以及当前程序循环是最大程序循环时，确定是否 当编程失败的存储器单元的数量小于存储器的数量时，未编程的多个存储器单元对应于可以成功地进行ECC（错误校验和校正）的多个存储器单元 可以成功进行ECC的单元，读取数据，以确定是否能够编程的存储器单元的错误位的数量是否能够成功地进行ECC，并且当未编程的存储器单元可以成功地进行ECC时，结束 一个编程操作。

公开(公告)号：US20100027336A1

公开(公告)日：2010-02-04

申请号：US12458437

申请日：2009-07-13

申请人： June-hong Park ,  Chi-weon Yoon

发明人： June-hong Park ,  Chi-weon Yoon

IPC分类号： G11C16/06 ,  G11C16/04

CPC分类号： G11C11/5628 ,  G11C16/10 ,  G11C16/3454 ,  G11C16/3459 ,  G11C29/00 ,  G11C2211/5621

摘要： A programming method for a non-volatile memory device includes performing a programming operation to program memory cells, when the programmed memory cells are determined to include memory cells that failed to be programmed and when a current program loop is a maximum program loop, determining whether a number of the memory cells that failed to be programmed corresponds to a number of memory cells that can successfully undergo ECC (error checking and correction), when the number of the memory cells that failed to be programmed is less than the number of the memory cells that can successfully undergo ECC, reading data so as to determine whether a number of error bits of the memory cells that failed to be programmed can successfully undergo ECC, and, when the memory cells that failed to be programmed can successfully undergo ECC, ending a programming operation.

摘要翻译： 用于非易失性存储器件的编程方法包括执行编程操作以对存储器单元进行编程，当编程存储器单元被确定为包括不能被编程的存储器单元以及当前程序循环是最大程序循环时，确定是否 当编程失败的存储器单元的数量小于存储器的数量时，未编程的多个存储器单元对应于可以成功地进行ECC（错误校验和校正）的多个存储器单元 可以成功进行ECC的单元，读取数据，以确定是否能够编程的存储器单元的错误位的数量是否能够成功地进行ECC，并且当未编程的存储器单元可以成功地进行ECC时，结束 一个编程操作。