利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

8 条记录 (耗时 0.028 秒)

    Semiconductor laser diode having ridge
    1.
    发明授权
    Semiconductor laser diode having ridge 有权
    具有脊的半导体激光二极管

    公开(公告)号：US07693200B2

    公开(公告)日：2010-04-06

    申请号：US11657672

    申请日：2007-01-25

    申请人： Jung-hye Chae ,  Jong-in Shim ,  Kyoung-ho Ha ,  Kyu-sang Kim ,  Han-youl Ryu

    发明人： Jung-hye Chae ,  Jong-in Shim ,  Kyoung-ho Ha ,  Kyu-sang Kim ,  Han-youl Ryu

    IPC分类号： H01S5/00

    CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/34333

    摘要： A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.

    摘要翻译： 提供一种半导体激光二极管，其包括基板，以及顺序地形成在基板上的第一半导体层，有源层，第二半导体层和电极。 在半导体激光二极管中，第二半导体层具有脊，电极形成在第二半导体层的脊上，宽度小于脊的宽度。

    Semiconductor laser diode having wafer-bonded structure and method of fabricating the same
    3.
    发明授权
    Semiconductor laser diode having wafer-bonded structure and method of fabricating the same 失效
    具有晶片结合结构的半导体激光二极管及其制造方法

    公开(公告)号：US07773649B2

    公开(公告)日：2010-08-10

    申请号：US11878347

    申请日：2007-07-24

    申请人： Kyu-sang Kim ,  Kyoung-ho Ha

    发明人： Kyu-sang Kim ,  Kyoung-ho Ha

    IPC分类号： H01S5/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/22 ,  H01S5/3063 ,  H01S2301/173 ,  H01S2304/12

    摘要： Example embodiments are directed to a semiconductor laser diode and a method of fabricating the same. The semiconductor laser diode may include a first semiconductor layer formed over a first substrate and capable of emitting light, and a second semiconductor layer capable of guiding the emitted light, wherein the first and second semiconductor layers are bonded to each other. The method of fabricating the semiconductor laser diode may include forming over a first substrate a first semiconductor layer capable of emitting light, forming over a second substrate a second semiconductor layer capable of guiding the light, bonding the first semiconductor layer to the second semiconductor layer, and removing the second substrate. The second semiconductor layer may be grown separately under conditions different from those for forming the first semiconductor layer, and may be subsequently bonded to the first semiconductor layer.

    摘要翻译： 示例性实施例涉及半导体激光二极管及其制造方法。 半导体激光二极管可以包括形成在第一基板上并且能够发光的第一半导体层，以及能够引导发射的光的第二半导体层，其中第一和第二半导体层彼此接合。 制造半导体激光二极管的方法可以包括在第一衬底上形成能够发光的第一半导体层，在第二衬底上形成能够引导光的第二半导体层，将第一半导体层接合到第二半导体层， 并移除第二基板。 第二半导体层可以在与用于形成第一半导体层的条件不同的条件下单独生长，并且可以随后结合到第一半导体层。

    Semiconductor laser diode having wafer-bonded structure and method of fabricating the same
    4.
    发明申请
    Semiconductor laser diode having wafer-bonded structure and method of fabricating the same 失效
    具有晶片结合结构的半导体激光二极管及其制造方法

    公开(公告)号：US20080049802A1

    公开(公告)日：2008-02-28

    申请号：US11878347

    申请日：2007-07-24

    申请人： Kyu-sang Kim ,  Kyoung-ho Ha

    发明人： Kyu-sang Kim ,  Kyoung-ho Ha

    IPC分类号： H01S5/026 ,  H01L21/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/22 ,  H01S5/3063 ,  H01S2301/173 ,  H01S2304/12

    摘要： Example embodiments are directed to a semiconductor laser diode and a method of fabricating the same. The semiconductor laser diode may include a first semiconductor layer formed over a first substrate and capable of emitting light, and a second semiconductor layer capable of guiding the emitted light, wherein the first and second semiconductor layers are bonded to each other. The method of fabricating the semiconductor laser diode may include forming over a first substrate a first semiconductor layer capable of emitting light, forming over a second substrate a second semiconductor layer capable of guiding the light, bonding the first semiconductor layer to the second semiconductor layer, and removing the second substrate. The second semiconductor layer may be grown separately under conditions different from those for forming the first semiconductor layer, and may be subsequently bonded to the first semiconductor layer.

    摘要翻译： 示例性实施例涉及半导体激光二极管及其制造方法。 半导体激光二极管可以包括形成在第一基板上并且能够发光的第一半导体层，以及能够引导发射的光的第二半导体层，其中第一和第二半导体层彼此接合。 制造半导体激光二极管的方法可以包括在第一衬底上形成能够发光的第一半导体层，在第二衬底上形成能够引导光的第二半导体层，将第一半导体层接合到第二半导体层， 并移除第二基板。 第二半导体层可以在与用于形成第一半导体层的条件不同的条件下单独生长，并且可以随后结合到第一半导体层。