公开(公告)号：US20190207370A1

公开(公告)日：2019-07-04

申请号：US16207890

申请日：2018-12-03

申请人： University of Central Florida Research Foundation, Inc.

发明人： JEFFREY CHILES ,  SASAN FATHPOUR

IPC分类号： H01S5/20 ,  H01S5/042 ,  H01S5/22 ,  G02B6/122 ,  H01S5/02

CPC分类号： H01S5/2045 ,  G02B6/1225 ,  H01S5/0215 ,  H01S5/0422 ,  H01S5/2031 ,  H01S5/22

摘要： An integrated photonic structure and a method of fabrication includes a substrate having at least one opening disposed therein; a semiconductor stack disposed above the substrate, the semiconductor stack being, at least in part, isolated from the substrate by an opening to define a suspended semiconductor membrane; and a first doped region and a second doped region located within the suspended semiconductor membrane. The first doped region is laterally separated from the second doped region by an optically active region disposed therein that defines a waveguiding region of the integrated photonic structure.

公开(公告)号：US10014660B2

公开(公告)日：2018-07-03

申请号：US14827429

申请日：2015-08-17

申请人： Commissariat A L'Energie Atomique et aux Energies Alternatives ,  STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

发明人： Thomas Ferrotti ,  Badhise Ben Bakir ,  Alain Chantre ,  Sebastien Cremer ,  Helene Duprez

IPC分类号： H01S5/125 ,  H01S5/12 ,  H01S5/02 ,  H01S5/026 ,  H01S5/343 ,  H01S5/022 ,  H01S5/042 ,  H01S5/10 ,  H01S5/187 ,  H01S5/323 ,  G02B6/12 ,  G02B6/30 ,  G02B6/34

CPC分类号： H01S5/1237 ,  G02B6/30 ,  G02B6/34 ,  G02B2006/12061 ,  G02B2006/12121 ,  H01L2224/32 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/0421 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/1231 ,  H01S5/187 ,  H01S5/323 ,  H01S5/343 ,  H01S2301/166

摘要： The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising: a III-V heterostructure gain medium (3); and an optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon. The optical rib waveguide (11) is oriented so that at least one Bragg grating (19, 19a, 19b) is arranged on that side (21) of the slab waveguide (15) which is proximal relative to the gain medium (3) and in that the rib (17) is placed on that side (23) of the slab waveguide (15) that is distal relative to the gain medium (3).

公开(公告)号：US09935089B2

公开(公告)日：2018-04-03

申请号：US15456769

申请日：2017-03-13

申请人： International Business Machines Corporation

发明人： Russell A. Budd ,  Mounir Meghelli ,  Jason Scott Orcutt ,  Jean-Olivier Plouchart

IPC分类号： G02B6/42 ,  H01L25/16 ,  H01L23/498 ,  H01L27/12 ,  H01S5/022 ,  H01L23/367 ,  H01L21/48 ,  H01L21/84 ,  H01S5/024 ,  G02B6/122 ,  G02B6/124 ,  G02B6/34 ,  H01S5/02 ,  H01L23/485 ,  H01L23/58 ,  H01L25/11 ,  G02B6/132 ,  H01L25/00 ,  G02B6/12 ,  H01S5/026 ,  H01S5/10 ,  H01S5/183

CPC分类号： H01L25/167 ,  G02B6/122 ,  G02B6/1221 ,  G02B6/124 ,  G02B6/132 ,  G02B6/34 ,  G02B6/4204 ,  G02B6/4214 ,  G02B6/4274 ,  G02B6/428 ,  G02B2006/12061 ,  G02B2006/12069 ,  G02B2006/12123 ,  G02B2006/12147 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/84 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/485 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49894 ,  H01L23/585 ,  H01L25/117 ,  H01L25/50 ,  H01L27/1203 ,  H01L2223/58 ,  H01L2224/16225 ,  H01L2924/15311 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/02248 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/026 ,  H01S5/1032 ,  H01S5/105 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/1838

摘要： Package structures and methods are provided to integrate optoelectronic and CMOS devices using SOI semiconductor substrates for photonics applications. For example, a package structure includes an integrated circuit (IC) chip, and an optoelectronics device and interposer mounted to the IC chip. The IC chip includes a SOI substrate having a buried oxide layer, an active silicon layer disposed adjacent to the buried oxide layer, and a BEOL structure formed over the active silicon layer. An optical waveguide structure is patterned from the active silicon layer of the IC chip. The optoelectronics device is mounted on the buried oxide layer in alignment with a portion of the optical waveguide structure to enable direct or adiabatic coupling between the optoelectronics device and the optical waveguide structure. The interposer is bonded to the BEOL structure, and includes at least one substrate having conductive vias and wiring to provide electrical connections to the BEOL structure.

公开(公告)号：US20170214216A1

公开(公告)日：2017-07-27

申请号：US14315970

申请日：2014-06-26

申请人： Alcatel Lucent USA, Inc. ,  ALCATEL-LUCENT CANADA, INC.

发明人： Po Dong ,  Young-Kai Chen

IPC分类号： H01S5/10 ,  H01S5/30 ,  H01S5/02

CPC分类号： H01S5/026 ,  H01S3/0637 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/1014 ,  H01S5/1032 ,  H01S5/3013

摘要： Various exemplary embodiments relate to an apparatus including: a first substrate including a planar dielectric layer on a semiconducting layer, and a silicon layer located directly on a planar surface of the dielectric layer, adjacent first and second segments of the silicon layer being optically end-coupled, the first segment being thicker than the second segment; and a second substrate including a III-V semiconductor layer segment on a top surface thereof, the first and second substrates being bonded together such that the III-V semiconductor layer segment is in direct contact with a portion of the first segment of the silicon layer.

公开(公告)号：US09640947B2

公开(公告)日：2017-05-02

申请号：US14820258

申请日：2015-08-06

申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

发明人： Casey O. Holder ,  Daniel F. Feezell ,  Steven P. DenBaars ,  James S. Speck ,  Shuji Nakamura

IPC分类号： H01S5/183 ,  H01S5/10 ,  H01S5/343 ,  B82Y20/00 ,  H01S5/065 ,  H01S5/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/42

CPC分类号： H01S5/18355 ,  B82Y20/00 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/0654 ,  H01S5/1039 ,  H01S5/183 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/2009 ,  H01S5/209 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/423 ,  H01S2301/176

摘要： A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.

公开(公告)号：US20170077677A1

公开(公告)日：2017-03-16

申请号：US15356302

申请日：2016-11-18

申请人： Soraa Laser Diode, Inc.

发明人： Po Shan Hsu ,  Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Benyamin Buller

IPC分类号： H01S5/343 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22

CPC分类号： H01S5/34333 ,  H01S5/0202 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/22 ,  H01S2304/00

摘要： A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member having a surface region, forming a patterned dielectric material overlying the surface region to expose a portion of the surface region within a vicinity of an recessed region of the patterned dielectric material and maintaining an upper portion of the patterned dielectric material overlying covered portions of the surface region, and performing a lateral epitaxial growth overlying the exposed portion of the surface region to fill the recessed region and causing a thickness of the lateral epitaxial growth to be formed overlying the upper portion of the patterned dielectric material. The method also includes forming an n-type gallium and nitrogen containing material, forming an active region, and forming a p-type gallium and nitrogen containing material. The method further includes forming a waveguide structure in the p-type gallium and nitrogen containing material.

摘要翻译： 一种制造激光二极管器件的方法包括提供具有表面区域的含镓和氮的衬底构件，形成覆盖表面区域的图案化电介质材料，以露出图案化电介质的凹陷区域附近的表面区域的一部分 材料并且保持图案化电介质材料的上部覆盖在表面区域的被覆部分上，并且执行覆盖在表面区域的暴露部分上的横向外延生长以填充凹陷区域并且形成横向外延生长的厚度 覆盖图案化电介质材料的上部。 该方法还包括形成n型含镓和氮的材料，形成有源区，并形成p型含镓和氮的材料。 该方法还包括在p型含镓和氮的材料中形成波导结构。

公开(公告)号：US20170063045A1

公开(公告)日：2017-03-02

申请号：US15177710

申请日：2016-06-09

申请人： Soraa Laser Diode, Inc.

发明人： Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Po Shan Hsu

IPC分类号： H01S5/343 ,  H01S5/32 ,  H01S5/20 ,  H01S5/02 ,  H01S5/22

CPC分类号： H01S5/34333 ,  H01L2224/18 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01L2924/3512 ,  H01S5/005 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/2009 ,  H01S5/2081 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3214 ,  H01S5/4043 ,  H01S5/4093 ,  H01S2301/173 ,  H01S2301/176 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

摘要翻译： 一种制造激光二极管器件的方法包括提供具有表面区域并形成覆盖在该表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，所述有源区域包括至少一个覆盖在n型上的有源层 包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。

公开(公告)号：US20160327759A1

公开(公告)日：2016-11-10

申请号：US15147988

申请日：2016-05-06

申请人： IMEC VZW ,  Universiteit Gent

发明人： Shahram Keyvaninia ,  Dries Van Thourhout ,  Gunther Roelkens

IPC分类号： G02B6/42 ,  G02B6/122 ,  G02B6/14 ,  G02B6/34

CPC分类号： G02B6/12002 ,  G02B6/12 ,  G02B6/12004 ,  G02B6/1228 ,  G02B6/14 ,  G02B6/34 ,  G02B2006/12061 ,  G02B2006/12078 ,  G02B2006/12107 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12142 ,  G02F1/01708 ,  H01L31/1035 ,  H01S5/0215 ,  H01S5/0218

摘要： A method of producing a heterogeneous photonic integrated circuit includes integrating at least one III-V hybrid device on a source substrate having at least a top silicon layer, and transferring by transfer-printing or by flip-chip bonding the III-V hybrid device and at least part of the top silicon layer of the source substrate to a semiconductor-on-insulator or dielectric-on-insulator host substrate.

摘要翻译： 一种制造异质光子集成电路的方法包括：将至少一个III-V混合器件集成在具有至少顶部硅层的源极衬底上，并通过转印或通过倒装芯片接合III-V混合器件和 源极衬底的顶部硅层的至少一部分到绝缘体上绝缘体或绝缘体上绝缘体上的主衬底上。

公开(公告)号：US20160164250A1

公开(公告)日：2016-06-09

申请号：US14962340

申请日：2015-12-08

申请人： Commissariat à l'Energie Atomique et aux Energies Alternatives

发明人： Jean-Louis Gentner ,  Jean Decobert

IPC分类号： H01S5/026 ,  H01S5/183 ,  H01S5/343

CPC分类号： H01S5/026 ,  G02B6/26 ,  G02B6/4215 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/50 ,  H01S2304/04

摘要： A method for manufacturing an optical transmitter that includes structures (71-76) defining together transmission means. The method includes a first step in which an InP wafer (3) is bonded on a substrate (1) comprising silicon, then this InP wafer (3) is made thinner to become an InP buffer (4), a second step in which a dielectric mask is laid onto this InP buffer (4), then openings (6) are patterned into chosen locations of this dielectric mask, and a third step in which the structures (71-76) are grown into corresponding patterned openings (6), then remaining parts of the dielectric mask are removed.

摘要翻译： 一种用于制造光发射机的方法，其包括将传输装置定义在一起的结构（71-76）。 该方法包括第一步骤，其中将InP晶片（3）接合在包含硅的衬底（1）上，然后使该InP晶片（3）更薄以成为InP缓冲器（4），第二步骤 将介电掩模放置在该InP缓冲器（4）上，然后将开口（6）图案化成该电介质掩模的选定位置，并且其中结构（71-76）生长到相应的图案化开口（6）中的第三步骤， 然后去除电介质掩模的剩余部分。

公开(公告)号：US09184562B2

公开(公告)日：2015-11-10

申请号：US13148911

申请日：2010-01-22

申请人： Il-Sug Chung

发明人： Il-Sug Chung

IPC分类号： H01S5/183 ,  H01S5/10 ,  H01S5/02 ,  H01S5/026 ,  H01S5/30

CPC分类号： H01S5/10 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/026 ,  H01S5/1032 ,  H01S5/105 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18366 ,  H01S5/1838 ,  H01S5/3095

摘要： The present invention provides a light source (2) for light circuits on a silicon platform (3). A vertical laser cavity is formed by a gain region (101) arranged between a top mirror (4) and a bottom grating-mirror (12) in a grating region (11) in a silicon layer (10) on a substrate. A waveguide (18, 19) for receiving light from the grating region (11) is formed within or to be connected to the grating region, and functions as an 5 output coupler for the VCL. Thereby, vertical lasing modes (16) are coupled to lateral in-plane modes (17, 20) of the in-plane waveguide formed in the silicon layer, and light can be provided to e.g. photonic circuits on a SOI or CMOS substrate in the silicon.

摘要翻译： 本发明提供一种用于硅平台（3）上的光电路的光源（2）。 垂直激光腔由在基板上的硅层（10）中的光栅区域（11）中布置在顶部反射镜（4）和底部光栅镜（12）之间的增益区域（101）形成。 用于接收来自光栅区域（11）的光的波导（18,19）形成在光栅区域内或与光栅区域连接，并且用作VCL的5输出耦合器。 因此，垂直激光模式（16）耦合到在硅层中形成的面内波导的横向面内模式（17,20），并且可以提供光。 在硅中的SOI或CMOS衬底上的光子电路。