利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

20 条记录 (耗时 0.023 秒)

    Heat dissipating structure and light emitting device having the same
    5.
    发明申请
    Heat dissipating structure and light emitting device having the same 审中-公开
    散热结构和具有该散热结构的发光器件

    公开(公告)号：US20060249745A1

    公开(公告)日：2006-11-09

    申请号：US11387864

    申请日：2006-03-24

    申请人： Su-hee Chae ,  Tae-hoon Jang ,  Hyung-kun Kim ,  Youn-joon Sung

    发明人： Su-hee Chae ,  Tae-hoon Jang ,  Hyung-kun Kim ,  Youn-joon Sung

    IPC分类号： H01L33/00

    CPC分类号： H01L33/647 ,  B82Y20/00 ,  H01L33/642 ,  H01S5/02236 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/02492 ,  H01S5/22 ,  H01S5/34333

    摘要： A heat dissipating structure is flip-chip bonded to a light-emitting element and facilitates heat dissipation. The heat dissipating structure includes: a submount facing the light-emitting element and having at least one groove; a conductive material layer filled into at least a portion of the at least one groove; and a solder layer interposed between the light-emitting element and the submount for bonding. The heat dissipating structure and the light-emitting device having the same allow efficient dissipation of heat generated in the light-emitting element during operation.

    摘要翻译： 散热结构被倒装贴合到发光元件上并且有利于散热。 散热结构包括：面向发光元件并具有至少一个凹槽的基座; 填充到所述至少一个凹槽的至少一部分中的导电材料层; 以及插入在发光元件和用于接合的基座之间的焊料层。 散热结构和具有该散热结构的发光装置允许在操作期间有效地散发在发光元件中产生的热量。

    Submount for light emitting device
    6.
    发明授权
    Submount for light emitting device 失效
    发光装置底座

    公开(公告)号：US07276740B2

    公开(公告)日：2007-10-02

    申请号：US11372204

    申请日：2006-03-10

    申请人： Hyung-kun Kim ,  Su-hee Chae ,  Tae-hoon Jang

    发明人： Hyung-kun Kim ,  Su-hee Chae ,  Tae-hoon Jang

    IPC分类号： H01L33/00

    CPC分类号： H01L23/15 ,  H01L23/49811 ,  H01L23/49838 ,  H01L33/62 ,  H01L2224/10175

    摘要： A submount for a light emitting device package is provided. The submount includes a substrate; a first bonding layer and a second bonding layer which are separately formed on the substrate; a first barrier layer and a second barrier layer which are formed on the first bonding layer and on the second bonding layer, respectively; a first solder and a second solder which are formed on the first barrier layer and on the second barrier layer, respectively; and a first blocking layer and a second blocking layer which are formed around the first barrier layer and the second barrier layer, blocking the melted first solder and the melted second solder from overflowing during a flip chip process.

    摘要翻译： 提供了一种用于发光器件封装的基座。 基座包括基板; 分别形成在所述基板上的第一接合层和第二接合层; 分别形成在第一接合层和第二接合层上的第一阻挡层和第二阻挡层; 分别形成在第一阻挡层和第二阻挡层上的第一焊料和第二焊料; 以及形成在第一阻挡层和第二阻挡层周围的第一阻挡层和第二阻挡层，在倒装芯片工艺期间阻挡熔化的第一焊料和熔化的第二焊料溢出。

    Submount for light emitting device
    8.
    发明申请
    Submount for light emitting device 失效
    发光装置底座

    公开(公告)号：US20060249744A1

    公开(公告)日：2006-11-09

    申请号：US11372204

    申请日：2006-03-10

    申请人： Hyung-kun Kim ,  Su-hee Chae ,  Tae-hoon Jang

    发明人： Hyung-kun Kim ,  Su-hee Chae ,  Tae-hoon Jang

    IPC分类号： H01L33/00

    CPC分类号： H01L23/15 ,  H01L23/49811 ,  H01L23/49838 ,  H01L33/62 ,  H01L2224/10175

    摘要： A submount for a light emitting device package is provided. The submount includes a substrate; a first bonding layer and a second bonding layer which are separately formed on the substrate; a first barrier layer and a second barrier layer which are formed on the first bonding layer and on the second bonding layer, respectively; a first solder and a second solder which are formed on the first barrier layer and on the second barrier layer, respectively; and a first blocking layer and a second blocking layer which are formed around the first barrier layer and the second barrier layer, blocking the melted first solder and the melted second solder from overflowing during a flip chip process.

    摘要翻译： 提供了一种用于发光器件封装的基座。 基座包括基板; 分别形成在所述基板上的第一接合层和第二接合层; 分别形成在第一接合层和第二接合层上的第一阻挡层和第二阻挡层; 分别形成在第一阻挡层和第二阻挡层上的第一焊料和第二焊料; 以及形成在第一阻挡层和第二阻挡层周围的第一阻挡层和第二阻挡层，在倒装芯片工艺期间阻挡熔化的第一焊料和熔化的第二焊料溢出。

    Substrate for growing Pendeo epitaxy and method of forming the same
    9.
    发明申请
    Substrate for growing Pendeo epitaxy and method of forming the same 有权
    用于生长Pendeo外延的底物及其形成方法

    公开(公告)号：US20070190755A1

    公开(公告)日：2007-08-16

    申请号：US11650981

    申请日：2007-01-09

    申请人： Ho-sun Paek ,  Tae-hoon Jang ,  Youn-Joon Sung ,  Tan Sakong ,  Min-ho Yang

    发明人： Ho-sun Paek ,  Tae-hoon Jang ,  Youn-Joon Sung ,  Tan Sakong ,  Min-ho Yang

    IPC分类号： H01L21/20

    CPC分类号： C30B7/005 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

    摘要： A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.

    摘要翻译： 提供了一种外延生长衬底及其制造方法。 骨架外延生长衬底包括衬底，在第一方向上形成在衬底上的用于Pendeo-外延生长的多个图案区域，以及至少一个溶液阻挡层，其与多个图案区域接触并在第二个衬底上形成 从而防止由于空气间隙而导致的半导体器件的污染，并且在Pendeo-外延生长工艺期间减少半导体器件的缺陷百分比。

    Substrate for growing Pendeo epitaxy and method of forming the same
    10.
    发明授权
    Substrate for growing Pendeo epitaxy and method of forming the same 有权
    用于生长Pendeo外延的底物及其形成方法

    公开(公告)号：US07632742B2

    公开(公告)日：2009-12-15

    申请号：US11650981

    申请日：2007-01-09

    申请人： Ho-sun Paek ,  Tae-hoon Jang ,  Youn-joon Sung ,  Tan Sakong ,  Min-ho Yang

    发明人： Ho-sun Paek ,  Tae-hoon Jang ,  Youn-joon Sung ,  Tan Sakong ,  Min-ho Yang

    IPC分类号： H01L21/20

    CPC分类号： C30B7/005 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265

    摘要： A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.

    摘要翻译： 提供了一种外延生长衬底及其制造方法。 骨架外延生长衬底包括衬底，在第一方向上形成在衬底上的用于Pendeo-外延生长的多个图案区域，以及至少一个溶液阻挡层，其与多个图案区域接触并在第二个衬底上形成 从而防止由于空气间隙而导致的半导体器件的污染，并且在Pendeo-外延生长工艺期间减少半导体器件的缺陷百分比。