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公开(公告)号：US06179911B2
公开(公告)日：2001-01-30
申请号：US09425019
申请日：1999-10-25
IPC分类号： C30B1520
CPC分类号： C30B29/06 , C30B15/14 , Y10S117/917 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： This invention provides a method and a apparatus capable of manufacturing single crystals with an oxygen density of less than 12×1017 atoms/cm3 or less than 10×1017 atoms/cm3, and wherein the oxygen density of the single crystal produced is uniformly distributed along its longitudinal axis. The electrical power inputted into the main heater 6 surrounding the quartz crucible 4 and the top heater 9 shaped like a reverse frustrated cone and disposed above the quartz crucible 4, is controlled to keep the temperature of the melt 5 in a preset range during the process of pulling up the single crystal silicon 10. When combining the main heater 6 and the top heater 9, the heat emitted from the main heater 6 can be kept small, and the heat load on the quartz crucible 4 and the amount of oxygen released from the quartz crucible 4 and dissloved into melt 5 can be reduced. Therefore, a single crystal of low oxygen density and with uniformly distributed oxygen density along its longitudinal axis can be obtained. Furthermore, the single-crystal silicon 10 can be assigned a proper thermal history. In the above process, if a magnetic field is applied to the melt, then single crystals of much lower oxygen density can be obtained.
摘要翻译： 本发明提供一种能够制造氧密度小于12×10 17原子/ cm 3或小于10×10 17原子/ cm 3的单晶的方法和装置，其中所制造的单晶的氧密度沿其纵向轴线均匀分布。 控制输入到围绕石英坩埚4的主加热器6的电力以及设置在石英坩埚4上方的倒塌锥体形状的顶部加热器9，以在熔融过程中将熔体5的温度保持在预设范围内 拉起单晶硅10.当组合主加热器6和顶部加热器9时，可以将从主加热器6发射的热量保持较小，并且石英坩埚4上的热负荷和从 可以减少石英坩埚4并且被分解成熔体5。 因此，可以获得具有低氧密度并沿着其纵轴具有均匀分布的氧密度的单晶。 此外，单晶硅10可以被赋予适当的热历史。 在上述过程中，如果对熔体施加磁场，则可以获得低得多的氧密度的单晶。
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公开(公告)号：US6007625A
公开(公告)日：1999-12-28
申请号：US941309
申请日：1997-09-30
CPC分类号： C30B29/06 , C30B15/14 , Y10S117/917 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： This invention provides a method and a apparatus capable of manufacturing single crystals with an oxygen density of less than 12.times.10.sup.17 atoms/cm.sup.3 or less than 10.times.10.sup.17 atoms/cm.sup.3, and wherein the oxygen density of the single crystal produced is uniformly distributed along its longitudinal axis. The electrical power inputted into the main heater 6 surrounding the quartz crucible 4 and the top heater 9 shaped like a reverse frustrated cone and disposed above the quartz crucible 4, is controlled to keep the temperature of the melt 5 in a preset range during the process of pulling up the single crystal silicon 10. When combining the main heater 6 and the top heater 9, the heat emitted from the main heater 6 can be kept small, and the heat load on the quartz crucible 4 and the amount of oxygen released from the quartz crucible 4 and dissloved into melt 5 can be reduced. Therefore, a single crystal of low oxygen density and with uniformly distributed oxygen density along its longitudinal axis can be obtained. Furthermore, the single-crystal silicon 10 can be assigned a proper thermal history. In the above process, if a magnetic field is applied to the melt, then single crystals of much lower oxygen density can be obtained.
摘要翻译： 本发明提供能够制造氧密度小于12×10 17原子/ cm 3或小于10×10 17原子/ cm 3的单晶的方法和装置，其中所制造的单晶的氧密度沿其纵向轴线均匀分布。 控制输入到围绕石英坩埚4的主加热器6的电力以及设置在石英坩埚4上方的倒塌锥体形状的顶部加热器9，以在熔融过程中将熔体5的温度保持在预设范围内 拉起单晶硅10.当组合主加热器6和顶部加热器9时，可以将从主加热器6发射的热量保持较小，并且石英坩埚4上的热负荷和从 可以减少石英坩埚4并且被分解成熔体5。 因此，可以获得具有低氧密度并沿着其纵轴具有均匀分布的氧密度的单晶。 此外，单晶硅10可以被赋予适当的热历史。 在上述过程中，如果对熔体施加磁场，则可以获得低得多的氧密度的单晶。
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公开(公告)号：US6042644A
公开(公告)日：2000-03-28
申请号：US121858
申请日：1998-07-24
CPC分类号： C30B15/30 , C30B15/22 , Y10S117/911 , Y10T117/1068 , Y10T117/1072
摘要： A single crystal pulling method includes the steps of: immersing seed crystal in a melt; growing single crystal around the seed crystal and reducing its diameter to remove dislocation in the single crystal; prior to forming a straight waist product portion of single crystal having a prescribed diameter, forming a straight waist holding portion having a diameter smaller than the prescribed diameter; holding the straight waist holding portion by using a single crystal holding device; and pulling the straight waist product portion while the straight waist holding portion is held. Preferably the step of forming the straight waist holding portion includes a step of varying a pulling speed to make unevenness in the surface thereof.
摘要翻译： 单晶拉拔方法包括以下步骤：将晶种浸入熔体中; 在晶种周围生长单晶并减小其直径以去除单晶中的位错; 在形成具有规定直径的单晶的直腰部产品部分之前，形成直径小于规定直径的直腰部保持部; 通过使用单晶保持装置保持直腰部保持部; 并且在保持直腰部保持部的同时拉出直腰部产品部。 优选地，形成直腰部保持部的步骤包括改变拉拔速度以使其表面不均匀的步骤。
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4.发明授权
公开(公告)号：US6099642A
公开(公告)日：2000-08-08
申请号：US88657
申请日：1998-06-02
CPC分类号： C30B15/30 , C30B15/32 , Y10S117/911 , Y10T117/1004 , Y10T117/1008 , Y10T117/1072
摘要： An object of the invention is to provide a single crystal clamping device and a single crystal supporting method. The single crystal clamping device does not become inclined and does not vibrate, and the center of the single crystal clamping device is congruous to the center of the growing single crystal. An apparatus for pulling up single crystals of the present invention, comprises: a single crystal pulling up wire for pulling up a seed crystal immersed in a melt of a raw material; a single crystal clamping device for clamping one end of the single crystal grown beneath the seed crystal; a wire-winding mechanism fixed on the single crystal clamping means and winding up the single crystal pulling up wire so as to adjust a speed of the single-crystal pulling up wire corresponding to the ascending/descending speeds of the single crystal clamping device; a pulling up wire-load cell for detecting the load applied on the crystal; and a summation load cell for measuring the combined load applied on the crystal pulling up wire and the single crystal clamping device.
摘要翻译： 本发明的目的是提供一种单晶夹持装置和单晶支撑方法。 单晶夹持装置不会变得倾斜并且不振动，并且单晶夹持装置的中心与生长的单晶的中心一致。 本发明的单晶提拉装置，包括：单晶提拉线，用于拉出浸在原料熔体中的晶种; 用于夹持在晶种之下生长的单晶的一端的单晶夹持装置; 固定在单晶夹持装置上的绕线机构，并且卷绕单晶提拉线，以便根据单晶夹持装置的上升/下降速度调节单晶提拉线的速度; 用于检测施加在晶体上的负载的提拉线电池; 以及用于测量施加在晶体上拉线和单晶夹持装置上的组合负载的求和测力传感器。
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公开(公告)号：US5942033A
公开(公告)日：1999-08-24
申请号：US48302
申请日：1998-03-26
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1072
摘要： A crystal-clamping fixture 30 is suspended by a pulling up mechanism 1 through the use of wires. The crystal-clamping fixture 30 includes a box 31 and a plurality of holding rods 32. The box 31 has two openings formed on its top and bottom sides. The reduced portion 2a, the enlarged portion 2b and the necked portion 2c formed beneath the seed crystal 5 are allowed to penetrate through the two openings during the pulling up operation. A plurality of "S" shaped slots 31a, 31b are formed on the lateral sides of the box 31. The holding rods 32 capable of rotating along the path of the "S" shaped slots 31a, 31b are horizontally disposed within the box 31 by inserting their two end portions through the "S" shaped slots 31a, 31b. The holding rods kept restrained at the upper ends of the "S" shaped slots are pushed out by the conic surface formed at the upper part of the enlarged portion 2b and rotate and descend to reach the lower ends of the "S" shaped slots. At the time the crystal-clamping fixture 30 is directed to ascend a small distance, then the holding rods 32 contact the conic surface formed between the enlarged portion 2b and the necked portion 2c to clamp the single crystal 2.
摘要翻译： 通过使用电线，拉出机构1悬挂晶体夹具30。 晶体夹具30包括盒31和多个保持杆32.盒31具有在其顶侧和底侧上形成的两个开口。 在拉拔操作期间允许形成在晶种5下面的缩小部分2a，扩大部分2b和颈部2c穿过两个开口。 多个“S”形槽31a，31b形成在盒31的侧面上。能够沿着“S”形槽31a，31b的路径旋转的保持杆32通过 将它们的两个端部插入穿过“S”形槽31a，31b。 在“S”形槽的上端保持约束的保持杆被形成在扩大部分2b的上部的锥形表面推出，并且旋转和下降到达“S”形槽的下端。 当晶体夹具30被指向上升一小段距离时，保持杆32接触形成在扩大部分2b和颈缩部分2c之间的锥形表面，以夹紧单晶2。
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公开(公告)号：US5938836A
公开(公告)日：1999-08-17
申请号：US956434
申请日：1997-10-23
IPC分类号： C30B30/04 , C30B15/30 , H01L21/208 , C30B15/22
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1004
摘要： This invention provides an apparatus and a method for manufacturing semiconductor single crystals, which enable a steady process of pulling up high-quality single silicon crystals to be easily performed during the growing of silicon single crystals by the CZ method aided by applying a Cusp magnetic field. Three facing homopolar magnets (hereinafter referred to as magnet) 1, 2, and 3 arc disposed outside the single-crystal pulling up chamber. The magnet 3 is located at the same height as the free surface of the melt 6 stored in a quartz crucible as the free surface of the melt 6 stored in a quartz crucible 5. Furthermore, the strength of the magnets 3 is set to be weaker than that of the magnets 1 and 2. The flux lines of the magnets 3 substantially pass through the quartz crucible 5 in the horizontal direction. However, the flux lines of the magnet 3 do not reach the silicon single crystal 7 being pulled up. The flux lines perpendicular to the free surface of the melt 6 and the strength of the magnetic field near the growth boundary of the crystal are reduces. Thus, the amount of oxygen coming from the quartz crucible 5 and convection near the free surface of the melt 6, starting from the quartz crucible 5 toward the silicon single crystal, can be minimized.
摘要翻译： 本发明提供一种用于制造半导体单晶的装置和方法，其能够通过CZ方法辅助通过应用Cusp磁场在C单独晶体生长期间提升高质量单晶硅的稳定过程 。 三面体上的单极磁体（以下称为磁体）1,2和3设置在单晶提拉室的外侧。 磁体3位于与石英坩埚5中储存的熔体6的熔融物6的自由表面相同的高度，作为储存在石英坩埚5中的熔体6的自由表面。此外，磁体3的强度设定得较弱 磁体3的磁通线在水平方向基本上通过石英坩埚5。 然而，磁体3的磁通线未到达上拉的单晶硅7。 垂直于熔体6的自由表面的磁通线和晶体生长边界附近的磁场的强度降低。 因此，可以使来自石英坩埚5的氧的量和从石英坩埚5向硅单晶开始的熔融物6的自由表面附近的对流最小化。
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公开(公告)号：US5885347A
公开(公告)日：1999-03-23
申请号：US15132
申请日：1998-01-29
CPC分类号： C30B15/30 , Y10T117/1008 , Y10T117/1072
摘要： The object of this invention is to provide a method and a device for manufacturing semiconductor single crystals by the CZ method in response to the increase in the weight of semiconductor single crystal produced. The necked portion formed beneath the reduced portion can be held and the single crystal under lifting can be re-melted.
摘要翻译： 本发明的目的是提供一种通过CZ方法制造半导体单晶的方法和装置，以响应所制造的半导体单晶的重量的增加。 形成在缩小部分下方的颈部可以被保持，提升的单晶可以再熔化。
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8.发明申请公开(公告)号：US20050229840A1
公开(公告)日：2005-10-20
申请号：US10512022
申请日：2003-04-17
CPC分类号： C30B29/06 , C30B15/36 , Y10S117/902
摘要： A method for eliminating slip dislocations in producing single crystal silicon, a seed crystal capable of eliminating the slip dislocations, a single crystal silicon ingot from which the slip dislocations have been eliminated and a single crystal silicon wafer, are disclosed. Single crystal silicon is produced by dipping a seed crystal in a melt and pulling the seed crystal up along the axis of the seed crystal, using a single crystal (1) in which the crystal orientation (10) is inclined at a predetermined angle θ with respect to the axial direction (9) so that the edge direction (8) of the {111} crystal plane is inclined with respect to the axial direction (9). When single crystal silicon is grown while pulling up a seed crystal by the CZ method, a single crystal silicon ingot of a large diameter and a heavy weight can be pulled up by eliminating slip dislocations from the thick crystal.
摘要翻译： 公开了一种消除单晶硅产生滑移位错的方法，能够消除滑移位错的晶种，消除滑移位错的单晶硅锭和单晶硅晶片。 通过将晶种浸入熔体中并通过使晶体取向（10）以预定的倾斜方向倾斜的单晶（1）将晶种沿晶种的轴向上拉出而制造单晶硅。 角度θ相对于轴向方向（9），使得{111}晶面的边缘方向（8）相对于轴向方向（9）倾斜。 当通过CZ法拉长晶种时生长单晶硅时，通过消除厚晶体的滑移位错，可以提高大直径和重量的单晶硅锭。
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公开(公告)号：US06315827B1
公开(公告)日：2001-11-13
申请号：US09410723
申请日：1999-09-30
申请人： Shoei Kurosaka , Junsuke Tomioka , Masakazu Kobayashi , Kazuhiro Mimura , Kenji Okamura , Hiroshi Monden , Naritoshi Ohtsukasa , Hiroshi Yoshinada
发明人： Shoei Kurosaka , Junsuke Tomioka , Masakazu Kobayashi , Kazuhiro Mimura , Kenji Okamura , Hiroshi Monden , Naritoshi Ohtsukasa , Hiroshi Yoshinada
IPC分类号： C30B1530
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： There is described an apparatus for producing a single crystal ingot capable of stably manufacturing a single crystal ingot by means of the Czochralski method, without being affected by influence of variation in extension of wires or an offset in points clamped by a clamping member. The clamping member is engaged with an engagement step formed in a single crystal which is being pulled by the CZ method, and the single crystal is pulled. The single crystal ingot manufacturing apparatus is provided with a flexible mechanism for absorbing variation in extension of the wires, in intermediate portions of the wires. Variation in extension of the wires is eliminated by means of the flexible mechanism, thereby retaining the single crystal in an upright position. Further, a sacrifice member which deforms so as to conform to the circumference of the engagement step is interposed between the clamping member and the engagement step, thereby preventing occurrence of cracking or deformation in the single crystal.
摘要翻译： 描述了一种用于生产能够通过切克劳斯基法（Czochralski）方法稳定地制造单晶锭的单晶锭的装置，而不受电线延伸的影响或由夹紧件夹紧的点的偏移的影响。 夹持构件与通过CZ方法拉制的单晶中形成的接合台阶接合，并且单晶被拉动。 单晶锭制造装置在电线的中间部分设置有用于吸收电线延伸变化的柔性机构。 通过柔性机构消除了电线延伸的变化，从而将单晶保持在直立位置。 此外，在夹紧构件和接合步骤之间插入有变形以使其与接合台阶的圆周相适应的牺牲构件，从而防止单晶中的开裂或变形。
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10.发明授权Method for manufacturing silicon single crystals and wafers adapted for producing semiconductors 有权制造适用于制造半导体的硅单晶和晶片的方法公开(公告)号：US06179910B2
公开(公告)日：2001-01-30
申请号：US09396107
申请日：1999-09-14
IPC分类号： C30B1520
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206
摘要： This invention provides a method for manufacturing silicon single crystals. The method is capable of eliminating void defects existing in deep regions of a silicon single crystal despite the size of the silicon single crystal. The silicon single crystals according to this invention are pulled the radius of a ring-shaped oxidation induced stacking fault (OSF ring) of a wafer is larger than half the radius of the wafer during the process of thermal oxidation treatment.
摘要翻译： 本发明提供一种制造单晶硅的方法。 该方法尽管硅单晶的尺寸能够消除存在于硅单晶的深区域中的空隙缺陷。 根据本发明的硅单晶在热氧化处理过程中拉动晶片的环形氧化诱导堆垛层错（OSF环）的半径大于晶片半径的一半。
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