公开(公告)号：US20050130331A1

公开(公告)日：2005-06-16

申请号：US10733980

申请日：2003-12-10

申请人： Justin Hwu ,  Thomas Leong

发明人： Justin Hwu ,  Thomas Leong

IPC分类号： H01L21/00 ,  H01L23/544

CPC分类号： H01L22/34

摘要： CMP process control array groups are fabricated upon the surface of the wafer for viewing through an optical microscope. The array groups include a plurality of test arrays, where each array includes a plurality of projecting test features. Each of the projecting test features are formed with the same projecting height and have a hard upper surface layer, such as diamond-like-carbon (DLC). All of the projecting test features within an array are formed with the same diameter, and the diameter of projecting test features of a particular array differs from the diameter of projecting test features in another array. The diameters are chosen such that the DLC surface is removed in specifically designed time increments, such as 5 seconds, from array to array, where projecting test features with the DLC surface removed appear as bright white, while the arrays with test features that retain some DLC surface are significantly darker.

摘要翻译： CMP工艺控制阵列组被制造在晶片的表面上，以通过光学显微镜观察。 阵列组包括多个测试阵列，其中每个阵列包括多个突出的测试特征。 每个突出的测试特征形成具有相同的突出高度并且具有硬的上表面层，例如类金刚石（DLC）。 阵列中的所有突出的测试特征形成为具有相同的直径，并且特定阵列的突出测试特征的直径与另一阵列中的突出测试特征的直径不同。 选择直径使得DLC表面以特定设计的时间增量（例如从阵列到阵列的5秒）去除，其中除去DLC表面的突出的测试特征显示为亮白色，而具有测试特征的阵列保留一些 DLC表面明显较暗。

公开(公告)号：US20060231930A1

公开(公告)日：2006-10-19

申请号：US11110090

申请日：2005-04-19

申请人： Satoru Araki ,  Robert Beach ,  Ying Hong ,  Thomas Leong ,  Timothy Minvielle ,  Howard Zolla

发明人： Satoru Araki ,  Robert Beach ,  Ying Hong ,  Thomas Leong ,  Timothy Minvielle ,  Howard Zolla

IPC分类号： H01L23/58

CPC分类号： G11B5/3163 ,  G11B5/3133 ,  G11B5/3967

摘要： A temperature resistant photomask is disclosed which is made from photoresist containing Si, which is exposed to oxygen during Reactive Ion Etching. The temperature resistant photomask may include a secondary mask layer, which may also acts as a release layer, and which may include spin-on polymide. The photoresist containing Si may be exposed to oxygen during Reactive Ion Etching by introducing oxygen and carbon dioxide.

摘要翻译： 公开了一种耐温光掩模，其由含有Si的光致抗蚀剂制成，其在反应离子蚀刻期间暴露于氧气。 耐温光掩模可以包括二次掩模层，其也可以用作剥离层，并且其可以包括旋涂聚酰亚胺。 含有Si的光致抗蚀剂可通过引入氧和二氧化碳在反应离子蚀刻期间暴露于氧气。

公开(公告)号：US20060234483A1

公开(公告)日：2006-10-19

申请号：US11110330

申请日：2005-04-19

申请人： Satoru Araki ,  Robert Beach ,  Ying Hong ,  Thomas Leong ,  Timothy Minvielle ,  Howard Zolla

发明人： Satoru Araki ,  Robert Beach ,  Ying Hong ,  Thomas Leong ,  Timothy Minvielle ,  Howard Zolla

IPC分类号： H01L21/22

CPC分类号： G11B5/3163 ,  Y10T29/49032 ,  Y10T29/49041

摘要： A method is disclosed for fabricating a CPP read head for a magnetic disk drive having an electrical isolation layer. The method includes providing a first shield layer, depositing a sensor stack on the first shield layer, a CMP stop layer is deposited on the sensor stack, and a release layer is deposited a on the CMP stop layer. Photoresist material containing Si is deposited on the release layer, and the photoresist material is then patterned and then oxidized by Reactive Ion Etching to form a high temperature photomask. The electrical isolation layer is then deposited to surround the sensor stack using a high temperature deposition process. The read head is then continued as either an in-stack bias sensor with ‘draped shield’ variation, or a hard bias stabilization variation.

公开(公告)号：US20060068511A1

公开(公告)日：2006-03-30

申请号：US10956452

申请日：2004-09-30

申请人： Sukhbir Dulay ,  Thomas Leong ,  John Yang

发明人： Sukhbir Dulay ,  Thomas Leong ,  John Yang

IPC分类号： H01L21/66

CPC分类号： H01L22/34

摘要： A method for forming metrology structures for a CMP process is described. A trench edge is formed in a base material or stack of materials which are preferably deposited as part of the process of fabricating the production structures on the wafer. A covering film of a second material with preferably with contrasting SEM properties is deposited over the trench edge in the base material. During CMP the covering film is preferentially worn away at the edge revealing the base material. The width of the base material which has been revealed is a measure of the progress of the CMP. Since the base material and the covering material are preferably selected to have contrasting images in an SEM, a CD-SEM can be used to precisely measure the CMP progress.

摘要翻译： 描述了一种用于形成CMP工艺的计量结构的方法。 沟槽边缘形成在材料的基材或堆叠中，其优选作为在晶片上制造生产结构的过程的一部分而沉积。 优选具有对比SEM性质的第二材料的覆盖膜沉积在基材中的沟槽边缘上。 在CMP期间，覆盖膜优先在露出基材的边缘处磨损掉。 已经揭示的基材的宽度是CMP的进展的度量。 由于基材和覆盖材料优选选择为在SEM中具有对比图像，所以可以使用CD-SEM来精确测量CMP进展。