公开(公告)号：US07129484B2

公开(公告)日：2006-10-31

申请号：US10761749

申请日：2004-01-21

申请人： Justin Hwu

发明人： Justin Hwu

IPC分类号： G06F19/00 ,  G01N23/00

CPC分类号： G03F1/84 ,  G01N23/04 ,  G01R31/307

摘要： To account for changing image contrast due to wafer/slider/mask charging in e-beam or ion beam wafer/slider/mask inspection or measurement tools, which could lead to false pattern recognition comparison and result in coordination verification failures, if a site of a wafer/slider/mask being inspected fails a pattern recognition test when compared to a first template, a second template configured with a different contrast is used for a second pattern recognition comparison after the tools starts stage search. Use of image histogram analysis principles can also be applied for interpolation or extrapolation of the two image templates for generating of a third template with a different image contrast from the first two for customizing template contrast for further pattern recognition robustness fine tuning. This synthesized template can serve as the “second” template or even be used as the third template in certain conditions where change of charging behavior from different production batches is seen over a time period.

摘要翻译： 为了解决由于电子束或离子束晶片/滑块/掩模检查或测量工具中的晶片/滑块/掩模充电而导致的图像对比度的变化，这可能导致伪图案识别比较并导致协调验证失败，如果 被检查的晶片/滑动器/掩模与第一模板相比时，不能进行图案识别测试，在工具开始阶段搜索之后，将配置有不同对比度的第二模板用于第二模式识别比较。 图像直方图分析原理的使用也可以应用于两个图像模板的插值或外插，用于生成具有不同图像对比度的第三个模板，用于定制模板对比度以进一步模式识别鲁棒性微调。 该合成的模板可以作为“第二”模板，或者甚至可以用作在一段时间内看不同生产批次的充电行为发生变化的某些条件下的第三个模板。

公开(公告)号：US20100300874A1

公开(公告)日：2010-12-02

申请号：US12473510

申请日：2009-05-28

申请人： David Shiao-Min Kuo ,  Dieter Weller ,  Jan-Ulrich Thiele ,  Justin Hwu ,  Paritosh Rajora

发明人： David Shiao-Min Kuo ,  Dieter Weller ,  Jan-Ulrich Thiele ,  Justin Hwu ,  Paritosh Rajora

IPC分类号： C23C14/46

CPC分类号： G11B5/82 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/855

摘要： A patterned magnetic layer is formed by bombardment of a masked high Mrt magnetic layer with a combination of both heavy ion species and light ion species. The method can be implemented as sequential process steps or in a single process step with the proper heavy/light ion species mixture. Advantageously, the combined heavy/light ion species bombardment method results in a patterned magnetic layer having high topographical uniformity across its surface.

摘要翻译： 通过用重离子物质和轻离子物质的组合轰击掩蔽的高Mrt磁性层形成图案化的磁性层。 该方法可以作为顺序的工艺步骤或在具有适当的重/轻离子物质混合物的单一工艺步骤中实施。 有利地，组合的重/轻离子物质轰击方法导致在其表面上具有高形貌均匀性的图案化磁性层。

公开(公告)号：US20070113395A1

公开(公告)日：2007-05-24

申请号：US11286076

申请日：2005-11-23

申请人： Sukhbir Dulay ,  Justin Hwu ,  Thao Pham

发明人： Sukhbir Dulay ,  Justin Hwu ,  Thao Pham

IPC分类号： G11B5/127 ,  C23C14/00

CPC分类号： G11B5/1278 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for measuring recession in a wafer undergoing an asymmetrical ion mill process. The method includes the formation of first and second reference features and possibly a dummy feature. The reference features are constructed such that the location of the midpoint between them is unaffected by the asymmetrical ion mill. By measuring the distance between a portion of the dummy feature and the midpoint between the reference features, the amount of recession of the dummy feature can be measured. The measurement can be used to calculate the relative location of the flare to the read sensor rear edge through overlay information. The reference features can be constructed as a pair of isosceles triangles with apexes that face one another. By keeping the angles of the sides of the features steep (ie. nearly parallel with the direction in which the ion mill is asymmetrical) the amount of material consumed on each of the reference features is substantially equal and the midpoint between the reference features is substantially stationary.

摘要翻译： 用于测量经历不对称离子磨工艺的晶片中的凹陷的方法。 该方法包括形成第一和第二参考特征以及可能的虚拟特征。 参考特征被构造成使得它们之间的中点的位置不受不对称离子磨机的影响。 通过测量虚拟特征的一部分与参考特征之间的中点之间的距离，可以测量虚拟特征的衰退量。 该测量可用于通过覆盖信息计算耀斑与读取传感器后缘的相对位置。 参考特征可以被构造为具有彼此面对的顶点的一对等腰三角形。 通过保持特征的侧面的角度陡峭（即，几乎平行于离子磨机的方向不对称），在每个参考特征上消耗的材料的量基本相等，并且参考特征之间的中点基本相等 静止的

公开(公告)号：US20060289749A1

公开(公告)日：2006-12-28

申请号：US11149789

申请日：2005-06-09

申请人： Justin Hwu

发明人： Justin Hwu

IPC分类号： G01N13/16

CPC分类号： G01Q10/06 ,  G01Q30/04

摘要： A method for determining interfacial information and critical dimensions of a sample using atomic force microscopy. Tip-specimen deconvolution is performed on the scan lines before the critical dimension information processing. Local maxima and minima or local slope change of each scan line are found on a plurality of scan lines. A best fit line is then found for the plurality of maxim and minima or slope change points. Two best fit lines may be found using a plurality of maxima or minima or slope change points. An intersection of the two best fit lines can be used to determine a critical dimension such as a transition point. Such a method may be used to determine a track width of a trapezoidal magnetic write head or may be used to determine the location of a flare point on a magnetic write head.

摘要翻译： 使用原子力显微镜确定样品的界面信息和临界尺寸的方法。 在临界尺寸信息处理之前，在扫描线上执行尖端样本去卷积。 在多条扫描线上发现每条扫描线的局部最大值和最小值或局部斜率变化。 然后针对多个最小值和最小值或斜率变化点找到最佳拟合线。 可以使用多个最大值或最小值或斜率变化点来找到两条最佳拟合线。 两条最佳拟合线的交点可用于确定临界尺寸，如过渡点。 这种方法可以用于确定梯形磁性写入磁头的磁道宽度，或者可以用于确定磁头上的闪光点的位置。

公开(公告)号：US20060126915A1

公开(公告)日：2006-06-15

申请号：US11013613

申请日：2004-12-15

申请人： Justin Hwu

发明人： Justin Hwu

IPC分类号： G06K9/00 ,  G21K7/00

CPC分类号： G06T7/593 ,  G06T2207/30148

摘要： Methods and systems for determining dimensions of a structure that has a re-entrant profile are disclosed. A method includes imaging at least a portion of a top surface of the structure. Subsequently, a second portion of the structure is imaged from a plurality of perspectives. A third portion of the structure is also imaged from a plurality of perspectives. A dimension of a bottom portion of the structure is determined based on the imaging.

摘要翻译： 公开了用于确定具有入口轮廓的结构的尺寸的方法和系统。 一种方法包括对结构的顶表面的至少一部分进行成像。 随后，结构的第二部分从多个视角成像。 结构的第三部分也从多个视角成像。 基于成像确定结构的底部的尺寸。

公开(公告)号：US20050157918A1

公开(公告)日：2005-07-21

申请号：US10761749

申请日：2004-01-21

申请人： Justin Hwu

发明人： Justin Hwu

IPC分类号： G01N23/04 ,  G01R31/307 ,  G03F1/00 ,  G06K9/00

CPC分类号： G03F1/84 ,  G01N23/04 ,  G01R31/307

摘要： To account for changing image contrast due to wafer/slider/mask charging in e-beam or ion beam wafer/slider/mask inspection or measurement tools, which could lead to false pattern recognition comparison and result in coordination verification failures, if a site of a wafer/slider/mask being inspected fails a pattern recognition test when compared to a first template, a second template configured with a different contrast is used for a second pattern recognition comparison after the tools starts stage search. Use of image histogram analysis principles can also be applied for interpolation or extrapolation of the two image templates for generating of a third template with a different image contrast from the first two for customizing template contrast for further pattern recognition robustness fine tuning. This synthesized template can serve as the “second” template or even be used as the third template in certain conditions where change of charging behavior from different production batches is seen over a time period.

摘要翻译： 为了解决由于电子束或离子束晶片/滑块/掩模检查或测量工具中的晶片/滑块/掩模充电而导致的图像对比度的变化，这可能导致伪图案识别比较并导致协调验证失败，如果 被检查的晶片/滑动器/掩模与第一模板相比时，不能进行图案识别测试，在工具开始阶段搜索之后，将配置有不同对比度的第二模板用于第二模式识别比较。 图像直方图分析原理的使用也可以应用于两个图像模板的插值或外插，用于生成具有不同图像对比度的第三个模板，用于定制模板对比度以进一步模式识别鲁棒性微调。 该合成的模板可以作为“第二”模板，或者甚至可以用作在一段时间内看不同生产批次的充电行为发生变化的某些条件下的第三个模板。

公开(公告)号：US20050130331A1

公开(公告)日：2005-06-16

申请号：US10733980

申请日：2003-12-10

申请人： Justin Hwu ,  Thomas Leong

发明人： Justin Hwu ,  Thomas Leong

IPC分类号： H01L21/00 ,  H01L23/544

CPC分类号： H01L22/34

摘要： CMP process control array groups are fabricated upon the surface of the wafer for viewing through an optical microscope. The array groups include a plurality of test arrays, where each array includes a plurality of projecting test features. Each of the projecting test features are formed with the same projecting height and have a hard upper surface layer, such as diamond-like-carbon (DLC). All of the projecting test features within an array are formed with the same diameter, and the diameter of projecting test features of a particular array differs from the diameter of projecting test features in another array. The diameters are chosen such that the DLC surface is removed in specifically designed time increments, such as 5 seconds, from array to array, where projecting test features with the DLC surface removed appear as bright white, while the arrays with test features that retain some DLC surface are significantly darker.

摘要翻译： CMP工艺控制阵列组被制造在晶片的表面上，以通过光学显微镜观察。 阵列组包括多个测试阵列，其中每个阵列包括多个突出的测试特征。 每个突出的测试特征形成具有相同的突出高度并且具有硬的上表面层，例如类金刚石（DLC）。 阵列中的所有突出的测试特征形成为具有相同的直径，并且特定阵列的突出测试特征的直径与另一阵列中的突出测试特征的直径不同。 选择直径使得DLC表面以特定设计的时间增量（例如从阵列到阵列的5秒）去除，其中除去DLC表面的突出的测试特征显示为亮白色，而具有测试特征的阵列保留一些 DLC表面明显较暗。

公开(公告)号：US20120025426A1

公开(公告)日：2012-02-02

申请号：US12847964

申请日：2010-07-30

申请人： David Kuo ,  Justin Hwu ,  Gennady Gauzner ,  Kim Yang Lee ,  Dieter Weller

发明人： David Kuo ,  Justin Hwu ,  Gennady Gauzner ,  Kim Yang Lee ,  Dieter Weller

IPC分类号： B29C59/02

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： A method and apparatus of thermal imprint lithography includes moving an imprinter against a surface to be imprinted, supplying energy to a layer of heating material, and forming features in the surface to be imprinted. The imprinter comprises a main body and the layer of heating material under the main body. In an embodiment the layer of heating material is electrically heated. In alternate embodiments, the layer of heating material is optically heated.

摘要翻译： 热压印光刻的方法和装置包括将打印机移动到要打印的表面上，将能量供应到加热材料层，以及在要印刷的表面中形成特征。 打印机包括主体和主体下方的加热材料层。 在一个实施例中，加热材料层被电加热。 在替代实施例中，加热材料层被光学加热。

公开(公告)号：US20060073618A1

公开(公告)日：2006-04-06

申请号：US10957097

申请日：2004-09-30

申请人： Sukhbir Dulay ,  Justin Hwu ,  Thao Pham

发明人： Sukhbir Dulay ,  Justin Hwu ,  Thao Pham

IPC分类号： H01L21/00 ,  H01L21/311 ,  H01L21/461

CPC分类号： G11B5/3173 ,  G11B5/3163

摘要： A method of making and using thin film calibration features is described. To fabricate a calibration standard according to the invention raised features are first formed from an electrically conductive material with a selected atomic number. A conformal thin film layer is deposited over the exposed sidewalls of the raised features. The sidewall material is selected to have a different atomic number and is preferably an nonconductive such as silicon dioxide or alumina. After the nonconductive material deposition, a controlled directional RIE process is used to remove the insulator layer deposited on the top and bottom surface of the lines and trenches. The remaining voids between the sidewalls of the raised features are filled with a conductive material. The wafer is then planarized with chemical mechanical planarization (CMP) to expose the nonconductive sidewall material on the surface. The nonconductive sidewall material will be fine lines embedded in conductive material.

摘要翻译： 描述制造和使用薄膜校准特征的方法。 为了制造根据本发明的校准标准，首先由具有所选原子序数的导电材料形成凸起特征。 在凸起特征的暴露的侧壁上沉积保形薄膜层。 侧壁材料选择为具有不同的原子序数，并且优选为非导电性，例如二氧化硅或氧化铝。 在非导电材料沉积之后，使用受控的定向RIE工艺来去除沉积在线和沟槽的顶表面和底表面上的绝缘体层。 凸起特征的侧壁之间的剩余空隙填充有导电材料。 然后用化学机械平面化（CMP）对晶片进行平面化，以暴露表面上的非导电侧壁材料。 非导电侧壁材料将是嵌入导电材料中的细线。