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    Solar cell, multi-junction solar cell, solar cell module, and photovoltaic power generation system
    1.
    发明授权
    Solar cell, multi-junction solar cell, solar cell module, and photovoltaic power generation system 有权

    公开(公告)号：US12094994B2

    公开(公告)日：2024-09-17

    申请号：US17898513

    申请日：2022-08-30

    Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

    Inventor： Kazushige Yamamoto ,  Naoyuki Nakagawa ,  Yukitami Mizuno ,  Soichiro Shibasaki ,  Yuya Honishi ,  Mutsuki Yamazaki ,  Yasutaka Nishida

    IPC: H01L31/072 ,  H01L31/032 ,  H01L31/0725

    CPC classification number: H01L31/072 ,  H01L31/032 ,  H01L31/0725

    Abstract: A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and an n-type layer that includes a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode, which mainly contains a compound represented by Gav1Znv2Snv3M1v4Ov5, the M1 being one or more selected from the group consisting of Hf, Zr, In, Ti, Al, B, Mg, Si, and Ge, the v1, the v2, and the v4 being numerical values of 0.00 or more, the v3 and the v5 being numerical values of more than 0, at least one of the v1 and the v2 being a numerical value of more than 0, and the v5 when a sum of the v1, the v2, the v3, and the v4 is 1 being 1.00 or more and 2.00 or less, and which is located on the n-electrode side, and a second n-type layer which is a layer that mainly contains a compound represented by Gaw1M2w2M3w3M4w4Ow5, the M2 being Al or/and B, the M3 is one or more selected from the group consisting of In, Ti, Zn, Hf, and Zr, the M4 being one or more selected from the group consisting of Sn, Si, and Ge, the w1 and the w5 being numerical values of more than 0, the w2, the w3, and the w4 being numerical values of 0.00 or more, and the w5 when a sum of the w1, the w2, the w3, and the w4 is 2 being 3.00 or more and 3.80 or less, and which is located on the p-type light-absorbing layer side.

    SOLAR CELL, MULTI-JUNCTION SOLAR CELL, SOLAR CELL MODULE, AND PHOTOVOLTAIC POWER GENERATION SYSTEM
    5.
    发明申请
    SOLAR CELL, MULTI-JUNCTION SOLAR CELL, SOLAR CELL MODULE, AND PHOTOVOLTAIC POWER GENERATION SYSTEM 有权

    公开(公告)号：US20230017543A1

    公开(公告)日：2023-01-19

    申请号：US17938988

    申请日：2022-09-07

    Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

    Inventor： Kazushige Yamamoto ,  Naoyuki Nakagawa ,  Yukitami Mizuno ,  Soichiro Shibasaki ,  Yuya Honishi ,  Mutsuki Yamazaki ,  Yoshiko Hiraoka

    IPC: H01L31/072 ,  H01L31/0336

    Abstract: A solar cell of an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer located between the p-electrode and the n-electrode and mainly containing a cuprous oxide, and an n-type layer includes a first n-type layer which is located between the p-type light-absorbing layer and the n-electrode and mainly contains a compound represented by Gax1M1x2M2x3M3x4Ox5, the M1 being Al and/or B, the M2 being one or more selected from the group consisting of In, Ti, Zn, Hf, and Zr, the M3 being one or more selected from the group consisting of Sn, Si, and Ge, the x1 and the x5 being more than 0, the x2, the x3, and the x4 being 0 or more, and the x5 when a sum of the x1, the x2, the x3, and the x4 is 2 being 3.0 or more and 3.8 or less, and a second n-type layer which is located between the first n-type layer and the n-electrode and mainly contains a compound represented by Gay1M1y2M2y3M3y4Oy5, the y1 and the y5 being more than 0, the y2, the y3, and the y4 being 0 or more, and the y5 when a sum of the y1, the y2, the y3, and the y4 is 2 being 3.0 or more and 3.8 or less, or a first n-type region which is located between the p-type light-absorbing layer and the n-electrode and mainly contains a compound represented by Gax1M1x2M2x3M3x4Ox5, the M1 being Al and/or B, the M2 being one or more selected from the group consisting of In, Ti, Zn, Hf, and Zr, the M3 being one or more selected from the group consisting of Sn, Si, and Ge, the x1 and the x5 being more than 0, the x2, the x3, and the x4 being 0 or more, and the x5 when a sum of the x1, the x2, the x3, and the x4 is 2 being 3.0 or more and 3.8 or less, and a second n-type region which is located between the first n-type region and the n-electrode and mainly contains a compound represented by Gay1M1y2M2y3M3y4Oy5, the y1 and the y5 being more than 0, the y2, the y3, and the y4 being 0 or more, and the y5 when a sum of the y1, the y2, the y3, and the y4 is 2 being 3.0 or more and 3.8 or less, wherein (x2+x3) is larger than (y2+y3).

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