Method of forming pattern, manufacturing method of semiconductor device and template
    2.
    发明授权
    Method of forming pattern, manufacturing method of semiconductor device and template 有权
    形成图案的方法,半导体器件和模板的制造方法

    公开(公告)号:US09252027B1

    公开(公告)日:2016-02-02

    申请号:US14644880

    申请日:2015-03-11

    CPC分类号: H01L21/0337

    摘要: In accordance with an embodiment, a method of forming a pattern includes forming a first layer on a fabrication target film, making a mold and the first layer push each other to form a protrusion on the fabrication target film, and forming first and second regions, forming a block copolymer layer including first and second blocks in the first and second regions, phase-separating the block copolymer layer, forming second and third layers in the first region, and forming fourth and fifth layers in the second region; and removing the third and fifth layers. The first region is surrounded by the first layer and the protrusion. The second region is surrounded by the first layer and contacts the first region via the protrusion. The third layer is surrounded by the second layer. The fifth layer is surrounded by the fourth layer.

    摘要翻译: 根据实施例,形成图案的方法包括在制造目标薄膜上形成第一层,制造模具并且第一层彼此推动以在制造目标薄膜上形成突起,并且形成第一和第二区域, 在所述第一和第二区域中形成包含第一和第二嵌段的嵌段共聚物层,相分离所述嵌段共聚物层,在所述第一区域中形成第二和第三层,并在所述第二区域中形成第四和第五层; 并移除第三层和第五层。 第一区域被第一层和突起包围。 第二区域被第一层包围,并经由突起与第一区域接触。 第三层被第二层包围。 第五层被第四层包围。