公开(公告)号：US20220246874A1

公开(公告)日：2022-08-04

申请号：US17659092

申请日：2022-04-13

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Akio AMANO ,  Hideyuki NAKAO ,  Kenji TODORI ,  Kenji FUJINAGA

IPC分类号： H01L51/44 ,  H01G9/20 ,  H01L51/00

摘要： A photoelectric conversion device in an embodiment includes a first photoelectric conversion part including a first transparent electrode, a first photoelectric conversion layer, and a first counter electrode and a second photoelectric conversion part including a second transparent electrode, a second photoelectric conversion layer, and a second counter electrode, the first photoelectric conversion part and the second photoelectric conversion part being provided on a transparent substrate. The first counter electrode and the second transparent electrode are electrically connected by a connection part. As for the first photoelectric conversion layer and the second photoelectric conversion layer, adjacent portions of the adjacent first and second photoelectric conversion layers are electrically separated by an inactive region having electrical resistance higher than that of the first and second photoelectric conversion layers.

公开(公告)号：US20190189943A1

公开(公告)日：2019-06-20

申请号：US16282855

申请日：2019-02-22

申请人： Kabushiki Kaisha Toshiba

发明人： Takeshi GOTANDA ,  Kenji TODORI

IPC分类号： H01L51/42 ,  H01L51/44

CPC分类号： H01L51/4213 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0043 ,  H01L51/0084 ,  H01L51/009 ,  H01L51/424 ,  H01L51/441 ,  H01L2031/0344 ,  H01L2251/552 ,  Y02E10/549 ,  Y02P70/521

摘要： According to one embodiment, a photoelectric conversion element includes a photoelectric conversion layer, a first electrode, and a first layer. The photoelectric conversion layer includes a material having a perovskite structure. The first electrode includes polyethylene dioxythiophene. The first layer is provided between the photoelectric conversion layer and the first electrode. The first layer has hole transport properties. The hygroscopicity of the first layer is lower than a hygroscopicity of the photoelectric conversion layer.

公开(公告)号：US20230005670A1

公开(公告)日：2023-01-05

申请号：US17930432

申请日：2022-09-08

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Haruhi OOOKA ,  Kenji TODORI ,  Kenji FUJINAGA

IPC分类号： H01G9/20

摘要： A photoelectric conversion element comprises: a photoelectric conversion layer; a first compound layer including a first supporting member and a first compound, the first compound being supported by the first supporting member, being not in contact with the photoelectric conversion layer, and being liquid or gelatinous in an environment to use the element; and a second compound layer including a second supporting member and a second compound, the second compound being supported by the second supporting member, being not in contact with the photoelectric conversion layer and the first compound, and being liquid or gelatinous in the environment.

公开(公告)号：US20160268530A1

公开(公告)日：2016-09-15

申请号：US15062279

申请日：2016-03-07

申请人： Kabushiki Kaisha Toshiba

发明人： Akihiro MATSUI ,  Takeshi GOTANDA ,  Kenji TODORI

IPC分类号： H01L51/42 ,  H01L51/44

CPC分类号： H01L51/4273 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0047 ,  H01L2251/308 ,  Y02E10/549

摘要： The present disclosure provides a photoelectric conversion element having high conversion efficiency. In the photoelectric conversion element, a transparent substrate, a transparent electrode, an electron transfer layer, a photoelectric conversion layer and a back electrode are stacked in this order. The electron transfer layer contains cesium ions and has a minimum thickness of 1 to 16 nm.

摘要翻译： 本公开提供了一种具有高转换效率的光电转换元件。 在光电转换元件中，依次层叠透明基板，透明电极，电子转移层，光电转换层和背面电极。 电子转移层含有铯离子，其最小厚度为1〜16nm。

公开(公告)号：US20200212330A1

公开(公告)日：2020-07-02

申请号：US16811761

申请日：2020-03-06

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Akio AMANO ,  Hideyuki NAKAO ,  Kenji TODORI ,  Kenji FUJINAKA

IPC分类号： H01L51/44 ,  H01L51/00 ,  H01G9/20

摘要： A photoelectric conversion device in an embodiment includes a first photoelectric conversion part including a first transparent electrode, a first photoelectric conversion layer, and a first counter electrode and a second photoelectric conversion part including a second transparent electrode, a second photoelectric conversion layer, and a second counter electrode, the first photoelectric conversion part and the second photoelectric conversion part being provided on a transparent substrate. The first counter electrode and the second transparent electrode are electrically connected by a connection part. As for the first photoelectric conversion layer and the second photoelectric conversion layer, adjacent portions of the adjacent first and second photoelectric conversion layers are electrically separated by an inactive region having electrical resistance higher than that of the first and second photoelectric conversion layers.

公开(公告)号：US20180211792A1

公开(公告)日：2018-07-26

申请号：US15690518

申请日：2017-08-30

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Shigehiko MORI ,  Takeshi GOTANDA ,  Haruhi OOOKA ,  Kenji TODORI

IPC分类号： H01G9/20 ,  H01L51/42 ,  H01L51/00 ,  H01G9/00

摘要： The present embodiments provide a flexible, lightweight and highly efficient photoelectric conversion device and further provide a manufacturing method thereof. The photoelectric conversion device according to the embodiment comprises a laminate structure of a substrate, an ITO electrode, a photoelectric conversion layer and a counter electrode. When subjected to surface X-ray diffraction analysis, the ITO electrode shows an X-ray diffraction profile characterized in that the peak at a diffraction peak position in the range of 2θ=30.6±0.5° has a half-width of 1.0° or less. The ITO electrode in the device can be formed by forming an amorphous-phase ITO film on the substrate and then by subjecting the film to annealing treatment at a temperature of 200° or less.

公开(公告)号：US20180026216A1

公开(公告)日：2018-01-25

申请号：US15679286

申请日：2017-08-17

申请人： Kabushiki Kaisha Toshiba

发明人： Haruhi OOOKA ,  Atsuko llDA ,  Hideyuki NAKAO ,  Kenji TODORI ,  Takeshi GOTANDA

IPC分类号： H01L51/42 ,  H01L51/00

CPC分类号： H01L51/4253 ,  H01L51/0007 ,  H01L51/0026 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0046 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521

摘要： A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C. R1—(CH2)n—R2  (1) Here, n: 1 to 20, and R1, R2: halogen or SH

公开(公告)号：US20160293874A1

公开(公告)日：2016-10-06

申请号：US15079562

申请日：2016-03-24

申请人： Kabushiki Kaisha Toshiba

发明人： Haruhi OOOKA ,  Atsuko llDA ,  Hideyuki NAKAO ,  Kenji TODORI ,  Takeshi GOTANDA

IPC分类号： H01L51/42 ,  H01L51/00

CPC分类号： H01L51/4253 ,  H01L51/0007 ,  H01L51/0026 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0046 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521

摘要： A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C. R1—(CH2)n—R2   (1) Here, n: 1 to 20, and R1, R2: halogen or SH

摘要翻译： 这里，n：1〜20，R1，R2：卤素或SH

公开(公告)号：US20160260918A1

公开(公告)日：2016-09-08

申请号：US15058578

申请日：2016-03-02

申请人： Kabushiki Kaisha Toshiba

发明人： Takeshi GOTANDA ,  Kenji TODORI

IPC分类号： H01L51/42 ,  H01L51/00 ,  H01L51/44

CPC分类号： H01L51/4213 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0043 ,  H01L51/0084 ,  H01L51/009 ,  H01L51/424 ,  H01L51/441 ,  H01L2031/0344 ,  H01L2251/552 ,  Y02E10/549 ,  Y02P70/521

摘要： According to one embodiment, a photoelectric conversion element includes a photoelectric conversion layer, a first electrode, and a first layer. The photoelectric conversion layer includes a material having a perovskite structure. The first electrode includes polyethylene dioxythiophene. The first layer is provided between the photoelectric conversion layer and the first electrode. The first layer has hole transport properties. The hygroscopicity of the first layer is lower than a hygroscopicity of the photoelectric conversion layer.

摘要翻译： 根据一个实施例，光电转换元件包括光电转换层，第一电极和第一层。 光电转换层包括具有钙钛矿结构的材料。 第一电极包括聚乙烯二氧噻吩。 第一层设置在光电转换层和第一电极之间。 第一层具有孔传输特性。 第一层的吸湿性低于光电转换层的吸湿性。

公开(公告)号：US20140139714A1

公开(公告)日：2014-05-22

申请号：US13799752

申请日：2013-03-13

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Ikuo FUJIWARA ,  Hideyuki FUNAKI ,  Kenji TODORI ,  Akira FUJIMOTO ,  Tsutomu NAKANISHI ,  Kenji NAKAMURA

IPC分类号： H04N5/374

CPC分类号： H01L27/14665 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14638

摘要： A solid state imaging device according to an embodiment includes a photo detector arranged two-dimensionally in a semiconductor substrate, a readout circuit provided in the semiconductor substrate, a first photoelectric conversion layer provided above the photo detector, a plurality of first metal dots provided above the first photoelectric conversion layer, a second photoelectric conversion layer provided above the first metal dots, and a plurality of second metal dots provided above the second photoelectric conversion layer.

摘要翻译： 根据实施例的固态成像装置包括：二维布置在半导体衬底中的光电检测器，设置在半导体衬底中的读出电路，设置在光电检测器上方的第一光电转换层，设置在上述多个第一金属点 第一光电转换层，设置在第一金属点上方的第二光电转换层，以及设置在第二光电转换层上方的多个第二金属点。