利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

6 条记录 (耗时 0.038 秒)

    RADIATION DETECTOR
    5.
    发明申请
    RADIATION DETECTOR 审中-公开

    公开(公告)号：US20200313094A1

    公开(公告)日：2020-10-01

    申请号：US16566475

    申请日：2019-09-10

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Atsushi WADA ,  lsao TAKASU ,  Rei HASEGAWA ,  Fumihiko AIGA

    IPC分类号： H01L51/00

    摘要： According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and a first layer. The first layer is provided between the first conductive layer and the second conductive layer. The first layer includes a first region and a second region. The first region includes a metal complex including a first metallic element. The second region includes an organic semiconductor material. The first metallic element includes at least one selected from the group consisting of Ir, Pt, Pb, and Cu.

    SEMICONDUCTOR DEVICE AND IMAGING DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND IMAGING DEVICE 有权
    半导体器件和成像器件

    公开(公告)号：US20160268345A1

    公开(公告)日：2016-09-15

    申请号：US14943221

    申请日：2015-11-17

    申请人： Kabushiki Kaisha Toshiba

    发明人： Takashi MIYAZAKI ,  Hideyuki FUNAKI ,  Yoshinori llDA ,  lsao TAKASU ,  Yuki NOBUSA

    IPC分类号： H01L27/30 ,  H01L51/44

    CPC分类号： H01L27/307 ,  H01L27/1461 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14667 ,  H01L27/14694 ,  H01L51/424 ,  Y02E10/549

    摘要： According to an embodiment, a semiconductor device includes a silicon substrate, a photoelectric conversion layer, a termination layer, and an electrode layer. In the silicon substrate, first semiconductor regions and second semiconductor regions are alternately arranged along a first surface on a light incident side of the silicon substrate. The first semiconductor regions are doped with impurities of first concentration and have a conductivity of either one of p-type and n-type. The second semiconductor regions are doped with impurities of a second concentration lower than the first concentration and have a conductivity of the other type. The photoelectric conversion layer is disposed on a first surface side of the silicon substrate. The termination layer is disposed between the silicon substrate and the photoelectric conversion layer, in contact with the first surface, and to terminate dangling bonds of the silicon substrate. The electrode layer is provided on the light incident side.

    摘要翻译： 根据实施例，半导体器件包括硅衬底，光电转换层，端接层和电极层。 在硅衬底中，第一半导体区域和第二半导体区域沿着硅衬底的光入射侧的第一表面交替布置。 第一半导体区域掺杂有第一浓度的杂质并且具有p型和n型中的任一种的导电性。 第二半导体区掺杂有低于第一浓度的第二浓度的杂质，并具有另一种类型的导电性。 光电转换层设置在硅衬底的第一表面侧。 端接层设置在硅衬底和光电转换层之间，与第一表面接触，并终止硅衬底的悬挂键。 电极层设置在光入射侧。