PHOTODETECTOR AND RADIATION DETECTOR
    1.
    发明公开

    公开(公告)号:US20230288581A1

    公开(公告)日:2023-09-14

    申请号:US17821026

    申请日:2022-08-19

    IPC分类号: G01T1/20 C07F5/02

    CPC分类号: G01T1/2018 C07F5/022

    摘要: According to one embodiment, a photodetector includes a first conductive layer, a second conductive layer, and an organic layer provided between the first conductive layer and the second conductive layer. The organic layer includes a first region and a second region. The second region is provided between the first region and the second conductive layer. The first region includes a first compound and a second compound. The first compound includes a first mother skeleton. The second region includes the first compound and a third compound. The third compound includes the first mother skeleton. The third compound is different from the first compound. The second region does not include the second compound, or a concentration of the second compound in the second region is lower than a concentration of the second compound in the first region.

    RADIATION DETECTOR
    5.
    发明申请

    公开(公告)号:US20220140244A1

    公开(公告)日:2022-05-05

    申请号:US17460942

    申请日:2021-08-30

    IPC分类号: H01L51/00 G01T1/24

    摘要: According to one embodiment, a radiation detector includes a first layer, a first conductive layer, a second conductive layer, and an organic semiconductor layer. The first layer includes a first organic substance. The first layer emits light based on beta rays incident on the first layer. A period from a time of a maximum value of an intensity of the light until the intensity of the light drops to 1/2.72 of the maximum value is not less than 10 ns. The second conductive layer is located between the first layer and the first conductive layer. The organic semiconductor layer is located between the first conductive layer and the second conductive layer.

    RADIATION DETECTOR
    6.
    发明申请

    公开(公告)号:US20220082715A1

    公开(公告)日:2022-03-17

    申请号:US17184733

    申请日:2021-02-25

    IPC分类号: G01T1/20 H01L27/30

    摘要: According to one embodiment, a radiation detector includes a base body, a first radiation detection element, and a second radiation detection element. The base body includes a first surface. The first surface includes first and second partial regions. A first direction from the first partial region toward the second partial region is along the first surface. The first radiation detection element is fixable to the first partial region. The second radiation detection element includes a first detecting part fixable to the second partial region. The first detecting part includes first and second end portions. A second direction from the first end portion toward the second end portion crosses the first surface. The second end portion is between the first end portion and the second partial region in the second direction. The first radiation detection element does not overlap the first end portion in the first direction.

    ORGANIC PHOTOELECTRIC CONVERSION DEVICE AND IMAGING APPARATUS INCLUDING THE SAME

    公开(公告)号:US20180182962A1

    公开(公告)日:2018-06-28

    申请号:US15125492

    申请日:2015-08-06

    IPC分类号: H01L51/00 C07F5/02

    摘要: An organic photoelectric conversion device of the embodiment includes an anode, a cathode, and an organic photoelectric conversion layer provided between the anode and the cathode. The organic photoelectric conversion layer contains a compound represented by the following general formula (1). [In the general formula (1), U, V, and W each independently represents a nitrogen-containing 6-membered aromatic ring which may have a substituent or a benzene ring which may have a substituent, at least one of U, V and W represents the nitrogen-containing 6-membered aromatic ring which may have a substituent, X represents any one of a halogen atom, a hydroxyl group, a carboxyl group, an alkyl group which may have a substituent, an aryl group which may have a substituent, an alkoxy group which may have a substituent, and an aryloxy group which may have a substituent.]

    NON-VOLATILE MEMORY DEVICE
    9.
    发明申请
    NON-VOLATILE MEMORY DEVICE 有权
    非易失性存储器件

    公开(公告)号:US20140063912A1

    公开(公告)日:2014-03-06

    申请号:US13964461

    申请日:2013-08-12

    IPC分类号: H01L45/00 G11C13/00

    摘要: According to an embodiment, a non-volatile memory device includes a first conductive layer, a second conductive layer, and a resistance change layer provided between the first conductive layer and the second conductive layer. The resistance change layer is capable of making a transition between a low-resistance state and a high-resistance state, and includes an oxide containing at least one of hafnium (Hf) and zirconium (Zr), at least one selected from the group consisting of barium (Ba), lanthanum (La), gadolinium (Gd) and lutetium (Lu), and nitrogen (N).

    摘要翻译: 根据实施例,非易失性存储器件包括第一导电层,第二导电层和设置在第一导电层和第二导电层之间的电阻变化层。 电阻变化层能够在低电阻状态和高电阻状态之间进行转变,并且包括含有铪(Hf)和锆(Zr)中的至少一种的氧化物,选自以下的至少一种: 的钡(Ba),镧(La),钆(Gd)和镥(Lu)和氮(N)。

    DETECTOR
    10.
    发明公开
    DETECTOR 审中-公开

    公开(公告)号:US20230292535A1

    公开(公告)日:2023-09-14

    申请号:US17820937

    申请日:2022-08-19

    IPC分类号: G01T1/24 H01L51/44 G01T1/20

    CPC分类号: G01T1/241 H01L51/441 G01T1/20

    摘要: According to one embodiment, a detector includes an element portion. The element portion includes a first detection portion and a wiring portion. The first detection portion includes a first electrode, a first counter electrode, and a first organic semiconductor layer. At least a part of the first organic semiconductor layer is between the first electrode and the first counter electrode. The wiring part includes a first electrode layer electrically connected with the first electrode, a first counter electrode layer electrically connected with the first counter electrode, and a first conductive layer. The first counter electrode layer is between the first electrode layer and the first detection portion in a first direction from the first electrode layer to the first counter electrode layer. The first conductive layer is between the first electrode layer and the first counter electrode layer in the first direction.