公开(公告)号：US20160083675A1

公开(公告)日：2016-03-24

申请号：US14784983

申请日：2014-04-07

申请人： KANTO KAGAKU KABUSHIKI KAISHA

发明人： Kikue Morita ,  Chiyoko Horike ,  Keisuke Fukaya ,  Takuo Ohwada

IPC分类号： C11D7/32 ,  H01L21/02 ,  C11D7/36

CPC分类号： C11D7/3281 ,  C11D3/28 ,  C11D3/30 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/36 ,  C11D11/0047 ,  C11D17/08 ,  H01L21/02074

摘要： The purpose of the present invention is to provide a cleaning liquid composition useful in cleaning substrates, etc., which have undergone treatment such as chemical mechanical polishing (CMP) in a process for manufacturing electronic devices such as semiconductor elements. This cleaning liquid composition for cleaning substrates having Cu wiring includes one or more basic compounds and one or more heteromonocyclic aromatic compounds containing a nitrogen atom, and has a hydrogen ion concentration (pH) of 8-11.

摘要翻译： 本发明的目的是提供一种清洁液体组合物，其用于清洁在半导体元件等电子器件的制造工序中经过化学机械研磨（CMP）等处理的基板等。 用于清洗具有Cu布线的基板的清洗液组合物包括一种或多种碱性化合物和一种或多种含有氮原子的杂环芳族化合物，其氢离子浓度（pH）为8-11。

公开(公告)号：US20210163856A1

公开(公告)日：2021-06-03

申请号：US17107216

申请日：2020-11-30

申请人： Kanto Kagaku Kabushiki Kaisha

发明人： Kikue Morita ,  Chiyoko Horike ,  Keisuke Fukaya ,  Takuo Ohwada

IPC分类号： C11D7/32 ,  C11D11/00 ,  C11D7/36 ,  C11D3/28 ,  H01L21/02 ,  C11D17/08 ,  C11D3/30

摘要： The purpose of the present invention is to provide a cleaning liquid composition useful in cleaning substrates, etc., which have undergone treatment such as chemical mechanical polishing (CMP) in a process for manufacturing electronic devices such as semiconductor elements. This cleaning liquid composition for cleaning substrates having Cu wiring includes one or more basic compounds and one or more heteromonocyclic aromatic compounds containing a nitrogen atom, and has a hydrogen ion concentration (pH) of 8-11.