-
公开(公告)号：US09334470B2
公开(公告)日：2016-05-10
申请号：US13705575
申请日：2012-12-05
发明人： Yumiko Taniguchi , Kikue Morita , Chiyoko Horike , Takuo Ohwada
CPC分类号： C11D7/3209 , C11D3/30 , C11D3/361 , C11D7/36 , C11D11/0047 , C23G1/18 , C23G1/20 , H01L21/02052 , H01L21/02068
摘要： [Purpose]To provide a cleaning liquid composition that has excellent removability for metallic impurities and particulates, does not cause corrosion of Cu, and can clean a semiconductor substrate having copper wiring in a production process for an electronic device such as a semiconductor device.[Solution means]A cleaning liquid composition for cleaning a semiconductor substrate having copper wiring, the cleaning liquid composition containing one or more types of basic compound containing no metal, and one or more types of phosphonic acid-based chelating agent, and having a hydrogen ion concentration (pH) of 8 to 10.
摘要翻译： [目的]提供一种对于金属杂质和微粒具有优异的除去性的清洗液组合物，不会引起Cu的腐蚀，并且可以在半导体装置等电子器件的制造工序中清洗具有铜布线的半导体基板。 [解决方案]一种用于清洗具有铜布线的半导体衬底的清洗液组合物，含有一种或多种不含金属的碱性化合物的洗涤液组合物，以及一种或多种类型的膦酸类螯合剂，并具有氢 离子浓度（pH）为8〜10。
-
公开(公告)号：US11512397B2
公开(公告)日：2022-11-29
申请号：US17132560
申请日：2020-12-23
发明人： Ryou Kouno , Takuo Ohwada
IPC分类号： C23F1/26 , H01L21/3213 , H01L21/308 , H01L21/768
摘要： An etchant composition that is capable of batch etching treatment of a tungsten film and a titanium nitride film and a method for etching using said etchant composition are provided. The etching composition of the present invention is an etchant composition comprising nitric acid and water for batch etching treatment of a tungsten film and a titanium nitride film.
-
公开(公告)号：US11046910B2
公开(公告)日：2021-06-29
申请号：US16497508
申请日：2018-03-05
发明人： Yumiko Taniguchi , Areji Takanaka , Takuo Ohwada
IPC分类号： C11D7/08 , C11D1/00 , C11D1/22 , C11D3/00 , C11D3/20 , C11D11/00 , H01L21/02 , H01L21/304 , H01L21/311
摘要： Provided is a cleaning solution composition which, when cleaning the surface of a semiconductor substrate or glass substrate, does not damage SiO2, Si3N4, Si, and the like forming a layer on the substrate surface, can be used under processing conditions applicable to a brush scrub cleaning chamber equipped with a CMP apparatus, and can efficiently remove compounds derived from abrasive particles in a slurry. This cleaning solution composition for cleaning the surface of a semiconductor substrate or glass substrate contains: one or two or more fluorine atom-containing inorganic acids or salts thereof; water; one or two or more reducing agents; and one or two or more anionic surfactants, and has a hydrogen ion concentration (pH) of less than 7.
-
公开(公告)号：US11279904B2
公开(公告)日：2022-03-22
申请号：US16473625
申请日：2017-12-26
发明人： Kikue Morita , Areji Takanaka , Takuo Ohwada
IPC分类号： C11D11/00 , C11D3/28 , C11D3/30 , C11D3/33 , C11D3/36 , C11D17/00 , C23G1/20 , H01L21/02 , H01L21/321 , H01L23/532
摘要： Provided is a cleaning liquid composition which is useful for cleaning of a substrate or the like that has been subjected to a chemical mechanical polishing (CMP) process, etc in the production steps of an electronic device such as a semiconductor element. A cleaning liquid composition according to the present invention is used for the purpose of cleaning a substrate that has a Cu wiring, and comprises one or more basic compounds and one or more nitrogen-containing monocyclic heterocyclic aromatic compounds that contain one or more carboxyl groups or ester groups, provided that in cases where one or more amino groups are contained therein, only amino groups directly bonded to a nitrogen-containing heterocyclic rind are contained. This cleaning liquid composition has a hydrogen ion concentration (pH) of 8-12.
-
公开(公告)号：US20190301026A1
公开(公告)日：2019-10-03
申请号：US16316054
申请日：2017-07-07
发明人： Ryou Kouno , Takuo Ohwada
IPC分类号： C23F1/26 , H01L21/3213
摘要： An etchant composition that is capable of batch etching treatment of a tungsten film and a titanium nitride film and a method for etching using said etchant composition are provided.The etching composition of the present invention is an etchant composition comprising nitric acid and water for batch etching treatment of a tungsten film and a titanium nitride film.
-
公开(公告)号：US20160083675A1
公开(公告)日：2016-03-24
申请号：US14784983
申请日：2014-04-07
发明人： Kikue Morita , Chiyoko Horike , Keisuke Fukaya , Takuo Ohwada
CPC分类号： C11D7/3281 , C11D3/28 , C11D3/30 , C11D7/32 , C11D7/3209 , C11D7/36 , C11D11/0047 , C11D17/08 , H01L21/02074
摘要： The purpose of the present invention is to provide a cleaning liquid composition useful in cleaning substrates, etc., which have undergone treatment such as chemical mechanical polishing (CMP) in a process for manufacturing electronic devices such as semiconductor elements. This cleaning liquid composition for cleaning substrates having Cu wiring includes one or more basic compounds and one or more heteromonocyclic aromatic compounds containing a nitrogen atom, and has a hydrogen ion concentration (pH) of 8-11.
摘要翻译： 本发明的目的是提供一种清洁液体组合物，其用于清洁在半导体元件等电子器件的制造工序中经过化学机械研磨（CMP）等处理的基板等。 用于清洗具有Cu布线的基板的清洗液组合物包括一种或多种碱性化合物和一种或多种含有氮原子的杂环芳族化合物，其氢离子浓度（pH）为8-11。
-
公开(公告)号：US20210163856A1
公开(公告)日：2021-06-03
申请号：US17107216
申请日：2020-11-30
发明人： Kikue Morita , Chiyoko Horike , Keisuke Fukaya , Takuo Ohwada
摘要： The purpose of the present invention is to provide a cleaning liquid composition useful in cleaning substrates, etc., which have undergone treatment such as chemical mechanical polishing (CMP) in a process for manufacturing electronic devices such as semiconductor elements. This cleaning liquid composition for cleaning substrates having Cu wiring includes one or more basic compounds and one or more heteromonocyclic aromatic compounds containing a nitrogen atom, and has a hydrogen ion concentration (pH) of 8-11.
-
公开(公告)号：US20150075850A1
公开(公告)日：2015-03-19
申请号：US14489528
申请日：2014-09-18
发明人： Takuo Ohwada , Toshikazu Shimizu
IPC分类号： C09K13/06 , H01L21/465 , H05K1/09 , C09K13/00 , C09K13/04
CPC分类号： C09K13/06 , C09K13/00 , H01L21/465 , H05K1/09 , H05K3/067 , H05K2201/0326 , H05K2201/10106 , H05K2201/10128 , H05K2201/10136
摘要： The object of the present invention is to provide an etching solution composition for etching a metal oxide containing In and a metal oxide containing Zn and In used as a transparent electrode or an oxide semiconductor of an electronic device such as a semiconductor element or a flat panel display (FPD), the etching solution composition being controllable to give a practical etching rate, having high dissolving power toward Zn, and enabling a long solution life due to suppressed variation of the formulation during use. The object is solved by an etching solution composition that enables microfabrication to be carried out for a metal oxide containing In and a metal oxide containing Zn and In used as a transparent electrode or an oxide semiconductor of an electronic device such as a semiconductor element or an FPD, the composition containing water and at least one type of acid, excluding hydrohalic acids, perhalic acids, etc., having an acid dissociation constant pKan at 25° C. in any dissociation stage of no greater than 2.15, and the composition having a pH at 25° C. of no greater than 4, and an etching method using the etching solution composition.
摘要翻译： 本发明的目的是提供一种用于蚀刻包含In的金属氧化物和含有Zn和In的金属氧化物的蚀刻溶液组合物，其用作半导体元件或平板电子器件的透明电极或氧化物半导体 显示（FPD），蚀刻溶液组合物可控制，以实现对Zn的溶解力高的实用蚀刻速率，并且由于在使用期间抑制了制剂的变化而使得溶液寿命长。 该目的通过蚀刻溶液组合物来解决，该组合物能够对含有In的金属氧化物和含有Zn和In的金属氧化物进行微细加工，所述金属氧化物用作透明电极或诸如半导体元件或电子器件的电子器件的氧化物半导体 FPD，在不超过2.15的任何解离阶段中，含有水和至少一种类型的酸的组合物，不包括氢卤酸，全卤酸等，其在25℃下具有酸解离常数pKan，组合物具有 25℃下的pH不大于4，使用蚀刻溶液组合物的蚀刻方法。
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.015 秒)