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公开(公告)号：US09334470B2
公开(公告)日：2016-05-10
申请号：US13705575
申请日：2012-12-05
发明人： Yumiko Taniguchi , Kikue Morita , Chiyoko Horike , Takuo Ohwada
CPC分类号： C11D7/3209 , C11D3/30 , C11D3/361 , C11D7/36 , C11D11/0047 , C23G1/18 , C23G1/20 , H01L21/02052 , H01L21/02068
摘要： [Purpose]To provide a cleaning liquid composition that has excellent removability for metallic impurities and particulates, does not cause corrosion of Cu, and can clean a semiconductor substrate having copper wiring in a production process for an electronic device such as a semiconductor device.[Solution means]A cleaning liquid composition for cleaning a semiconductor substrate having copper wiring, the cleaning liquid composition containing one or more types of basic compound containing no metal, and one or more types of phosphonic acid-based chelating agent, and having a hydrogen ion concentration (pH) of 8 to 10.
摘要翻译： [目的]提供一种对于金属杂质和微粒具有优异的除去性的清洗液组合物，不会引起Cu的腐蚀，并且可以在半导体装置等电子器件的制造工序中清洗具有铜布线的半导体基板。 [解决方案]一种用于清洗具有铜布线的半导体衬底的清洗液组合物，含有一种或多种不含金属的碱性化合物的洗涤液组合物，以及一种或多种类型的膦酸类螯合剂，并具有氢 离子浓度（pH）为8〜10。
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公开(公告)号：US20210163856A1
公开(公告)日：2021-06-03
申请号：US17107216
申请日：2020-11-30
发明人： Kikue Morita , Chiyoko Horike , Keisuke Fukaya , Takuo Ohwada
摘要： The purpose of the present invention is to provide a cleaning liquid composition useful in cleaning substrates, etc., which have undergone treatment such as chemical mechanical polishing (CMP) in a process for manufacturing electronic devices such as semiconductor elements. This cleaning liquid composition for cleaning substrates having Cu wiring includes one or more basic compounds and one or more heteromonocyclic aromatic compounds containing a nitrogen atom, and has a hydrogen ion concentration (pH) of 8-11.
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公开(公告)号：US11279904B2
公开(公告)日：2022-03-22
申请号：US16473625
申请日：2017-12-26
发明人： Kikue Morita , Areji Takanaka , Takuo Ohwada
IPC分类号： C11D11/00 , C11D3/28 , C11D3/30 , C11D3/33 , C11D3/36 , C11D17/00 , C23G1/20 , H01L21/02 , H01L21/321 , H01L23/532
摘要： Provided is a cleaning liquid composition which is useful for cleaning of a substrate or the like that has been subjected to a chemical mechanical polishing (CMP) process, etc in the production steps of an electronic device such as a semiconductor element. A cleaning liquid composition according to the present invention is used for the purpose of cleaning a substrate that has a Cu wiring, and comprises one or more basic compounds and one or more nitrogen-containing monocyclic heterocyclic aromatic compounds that contain one or more carboxyl groups or ester groups, provided that in cases where one or more amino groups are contained therein, only amino groups directly bonded to a nitrogen-containing heterocyclic rind are contained. This cleaning liquid composition has a hydrogen ion concentration (pH) of 8-12.
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公开(公告)号：US20160083675A1
公开(公告)日：2016-03-24
申请号：US14784983
申请日：2014-04-07
发明人： Kikue Morita , Chiyoko Horike , Keisuke Fukaya , Takuo Ohwada
CPC分类号： C11D7/3281 , C11D3/28 , C11D3/30 , C11D7/32 , C11D7/3209 , C11D7/36 , C11D11/0047 , C11D17/08 , H01L21/02074
摘要： The purpose of the present invention is to provide a cleaning liquid composition useful in cleaning substrates, etc., which have undergone treatment such as chemical mechanical polishing (CMP) in a process for manufacturing electronic devices such as semiconductor elements. This cleaning liquid composition for cleaning substrates having Cu wiring includes one or more basic compounds and one or more heteromonocyclic aromatic compounds containing a nitrogen atom, and has a hydrogen ion concentration (pH) of 8-11.
摘要翻译： 本发明的目的是提供一种清洁液体组合物，其用于清洁在半导体元件等电子器件的制造工序中经过化学机械研磨（CMP）等处理的基板等。 用于清洗具有Cu布线的基板的清洗液组合物包括一种或多种碱性化合物和一种或多种含有氮原子的杂环芳族化合物，其氢离子浓度（pH）为8-11。
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