Polishing liquid composition for silicon oxide film

    公开(公告)号:US11795346B2

    公开(公告)日:2023-10-24

    申请号:US16958640

    申请日:2018-12-21

    Inventor: Yohei Uchida

    CPC classification number: C09G1/02 B24B37/044 H01L21/31053

    Abstract: A polishing liquid composition for a silicon oxide film according to the present invention includes cerium oxide particles, a water-soluble macromolecular compound, and an aqueous medium, and the water-soluble macromolecular compound is a water-soluble macromolecular compound including a betaine structure, excluding carbobetaine homopolymers and sulfobetaine homopolymers. The water-soluble macromolecular compound is preferably a water-soluble macromolecular compound containing a constitutional unit A including a betaine structure, and a constitutional unit B that is a constitutional unit other than the constitutional unit A and contains at least one group of a primary amino group, a secondary amino group, a tertiary amino group, a quaternary ammonium group, and salts thereof.

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