公开(公告)号：US12187919B2

公开(公告)日：2025-01-07

申请号：US17552932

申请日：2021-12-16

Applicant: KCTECH CO., LTD.

Inventor： Jin Sook Hwang ,  Hyun Goo Kong ,  Yun Su Kim

IPC: C09G1/02 ,  B82Y40/00 ,  H01L21/304

Abstract: A polishing slurry composition is provided. The polishing slurry composition includes polishing particles, a first polishing inhibitor containing a hydrophobic amino acid, and a second polishing inhibitor containing a cyclic polymer, and the first polishing inhibitor and the second polishing inhibitor are different.

公开(公告)号：US10711160B2

公开(公告)日：2020-07-14

申请号：US15883655

申请日：2018-01-30

Applicant: Samsung Electronics Co., Ltd. ,  KCTECH CO., LTD.

Inventor： Seung Ho Park ,  Hyun Goo Kong ,  Jung Hun Kim ,  Sang Mi Lee ,  Woo In Lee ,  Hee Sook Cheon ,  Sang Kyun Kim ,  Hao Cui ,  Jong Hyuk Park ,  Il Young Yoon

IPC: H01L21/3205 ,  C09G1/02 ,  H01L21/28 ,  H01L21/321 ,  H01L27/108

Abstract: A slurry composition for polishing a metal layer and a method for fabricating a semiconductor device using the same are provided. The slurry composition for polishing a metal layer includes polishing particles including a metal oxide, an oxidizer including hydrogen peroxide, and a first polishing regulator including at least one selected from a group consisting of phosphate, phosphite, hypophosphite, and metaphosphate, wherein a content of the oxidizer is 0.01 wt % to 0.09 wt % with respect to 100 wt % of the slurry composition for polishing the metal layer.