公开(公告)号：US20240133017A1

公开(公告)日：2024-04-25

申请号：US17971683

申请日：2022-10-23

Applicant: KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS

Inventor： Amar Kamal Mohmeadkhair SALIH ,  Qasem Ahmed Qasem DRMOSH ,  Tarek KANDIEL ,  Zain Hassan YAMANI

IPC: C23C14/00 ,  C23C14/08 ,  C25B1/04 ,  C25B1/55 ,  C25B11/091

CPC classification number: C23C14/0036 ,  C23C14/083 ,  C23C14/086 ,  C25B1/04 ,  C25B1/55 ,  C25B11/091

Abstract: A method for coating a substrate with a Co-Pi modified BiVO4/WO3 heterostructure film includes direct current reactive sputtering tungsten (W) onto a substrate in a gaseous mixture containing oxygen to form a tungsten trioxide (WO3) film, direct current reactive sputtering bismuth (Bi) onto the tungsten trioxide (WO3) film in a gaseous mixture containing oxygen to form a dibismuth trioxide (Bi2O3) film, drop-casting a vanadyl acetylacetonate solution onto the Bi2O3 film and heating at a temperature of at least 450° C. in ambient air to convert the Bi2O3 film to a BiVO4 film, and photoelectrochemically coating the BiVO4 film with a cobalt-phosphate (Co-Pi) to form a modified film on the surface of the substrate. A photoanode containing the Co-Pi modified BiVO4/WO3 heterostructure film prepared by the method, and its application in water splitting.

公开(公告)号：US20240229218A9

公开(公告)日：2024-07-11

申请号：US17971683

申请日：2022-10-24

Applicant: KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS

Inventor： Amar Kamal Mohmeadkhair SALIH ,  Qasem Ahmed Qasem DRMOSH ,  Tarek KANDIEL ,  Zain Hassan YAMANI

IPC: C23C14/00 ,  C23C14/08 ,  C25B1/04 ,  C25B1/55 ,  C25B11/091

CPC classification number: C23C14/0036 ,  C23C14/083 ,  C23C14/086 ,  C25B1/04 ,  C25B1/55 ,  C25B11/091

Abstract: A method for coating a substrate with a Co-Pi modified BiVO4/WO3 heterostructure film includes direct current reactive sputtering tungsten (W) onto a substrate in a gaseous mixture containing oxygen to form a tungsten trioxide (WO3) film, direct current reactive sputtering bismuth (Bi) onto the tungsten trioxide (WO3) film in a gaseous mixture containing oxygen to form a dibismuth trioxide (Bi2O3) film, drop-casting a vanadyl acetylacetonate solution onto the Bi2O3 film and heating at a temperature of at least 450° C. in ambient air to convert the Bi2O3 film to a BiVO4 film, and photoelectrochemically coating the BiVO4 film with a cobalt-phosphate (Co-Pi) to form a modified film on the surface of the substrate. A photoanode containing the Co-Pi modified BiVO4/WO3 heterostructure film prepared by the method, and its application in water splitting.