公开(公告)号：US20220284972A1

公开(公告)日：2022-09-08

申请号：US17459712

申请日：2021-08-27

Applicant: KIOXIA CORPORATION

Inventor： Emiri TAKADA ,  Naofumi ABIKO

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G11C16/08 ,  G11C16/04

Abstract: A semiconductor storage device includes a memory cell array includes a plurality of memory cell transistors, a plurality of word lines connected to gates of the memory cell transistors, a voltage generation circuit configured to generate a voltage applied to each of the word lines, and a control circuit configured to control an operation of the memory cell array. In a write operation for writing data to the memory cell array that includes multiple loops of a program operation and a verify operation, the control circuit controls an operation of the voltage generation circuit so that a rate of increase of a voltage applied to a non-selected word line at a beginning of the verify operation is different for at least two of the loops.