公开(公告)号：US12133472B2

公开(公告)日：2024-10-29

申请号：US17463522

申请日：2021-08-31

Applicant: KIOXIA CORPORATION

Inventor： Katsuhiko Koui ,  Masaru Toko ,  Soichi Oikawa ,  Hideyuki Sugiyama

IPC: H10N50/80 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

CPC classification number: H10N50/80 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

Abstract: A magnetic storage device includes a magnetoresistance effect element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a non-magnetic layer between the first and second magnetic layers. The first magnetic layer includes a first layer that is magnetic, a second layer that is magnetic and farther from the non-magnetic layer than the first layer, and a third layer between the first and second layers. The third layer includes a first portion formed of an insulating material or a semiconductor material and a plurality of second portions surrounded by the first portion and formed of a conductive material.