公开(公告)号：US20240099027A1

公开(公告)日：2024-03-21

申请号：US18179895

申请日：2023-03-07

Applicant: Kioxia Corporation

Inventor： Kensuke TAKAHASHI ,  Daisaburo TAKASHIMA ,  Naoki KAI ,  Yasumi ISHIMOTO

IPC: H10B63/00 ,  H10B63/10

CPC classification number: H10B63/845 ,  H10B63/10 ,  H10B63/34

Abstract: According to one embodiment, a cell block includes memory cells and select transistors. The memory cells correspond are connected in parallel between a local source line and a local bit line. The select transistor is connected between the local bit line and a bit line. The memory cell includes a cell transistor and a resistance change element. A gate of the cell transistor is connected to a word line. The resistance change element is connected to the cell transistor in series between the local source line and the local bit line. Each cell block is configured as a columnar structure penetrating a plurality of conductive films functioning as word lines. The select transistor and the local bit line are connected at a contact portion formed of a material different from a material of the local bit line.

公开(公告)号：US20250081435A1

公开(公告)日：2025-03-06

申请号：US18817693

申请日：2024-08-28

Applicant: Kioxia Corporation

Inventor： Masayuki MURASE ,  Yuna MATSUMOTO ,  Mikiya ISHII ,  Naoki KAI ,  Kotaro NODA ,  Kensuke TAKAHASHI

IPC: H10B12/00

Abstract: A semiconductor device may include a channel including an oxide semiconductor layer in a through hole; a first electrode in a first side of the through hole, the first electrode connected to a first side of the channel; a second electrode in a second side of the through hole and connected to a second side of the channel; and an insulating layer having a groove in which the second electrode is accommodated. The insulating layer includes first and second insulating films. The groove extends in a thickness direction. At least a part of the groove has a depth where at least a part of the groove penetrates through the first insulating film and reaches the second insulating film. The second electrode includes a stack of a metal film and a conductive film. The metal film is in contact with at least an inner bottom surface of the groove.

公开(公告)号：US20230301119A1

公开(公告)日：2023-09-21

申请号：US17901744

申请日：2022-09-01

Applicant: KIOXIA CORPORATION

Inventor： Kensuke TAKAHASHI

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/249 ,  H01L45/1233 ,  H01L45/1206 ,  H01L27/2436

Abstract: According to one embodiment, a memory device includes a first conductor layer and a second conductor layer spaced apart from each other in a first direction, a first semiconductor film spaced from the first conductor layer in a second direction intersecting the first direction, and a second semiconductor film spaced from the second conductor layer in the second direction. The first semiconductor film is between a first resistance change film and the first conductor layer in the second direction. The second semiconductor film is between a second resistance change film and the second conductor layer in the second direction. A first conductor film has a first end contacting the first semiconductor film and the first resistance change film and a second end contacting the second semiconductor film and the second resistance change film.