公开(公告)号：US12156404B2

公开(公告)日：2024-11-26

申请号：US17457710

申请日：2021-12-06

Applicant: Kioxia Corporation

Inventor： Takashi Izumi ,  Akitsugu Hatazaki ,  Shingo Nakajima

IPC: H10B41/40 ,  H01L23/522 ,  H10B41/10 ,  H10B41/20 ,  H10B43/10 ,  H10B43/20 ,  H10B43/40

Abstract: A semiconductor device according to one embodiment includes: a semiconductor substrate; a peripheral circuit provided on the semiconductor substrate; and a stacked body provided above the peripheral circuit, which has a memory cell array. The peripheral circuit includes: a metal film including silicon; a silicide film stacked on the metal film; and a barrier metal film stacked on the silicide film.

公开(公告)号：US11482489B2

公开(公告)日：2022-10-25

申请号：US16990793

申请日：2020-08-11

Applicant: KIOXIA CORPORATION

Inventor： Shingo Nakajima ,  Ryota Asada ,  Hidenobu Nagashima ,  Masayuki Akou

IPC: H01L23/522 ,  H01L23/532 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11582

Abstract: According to one embodiment, a semiconductor device includes a substrate, an interconnect layer, a layer stack, and a first silicon nitride layer. The interconnect layer includes a transistor provided on the substrate and a first interconnect electrically coupled to the transistor and is provided above the transistor. The layer stack is provided above the interconnect layer and includes conductive layers stacked with an insulation layer interposed between two of conductive layers of each pair of conductive layers. The first silicon nitride layer is provided between the interconnect layer and the layer stack.