公开(公告)号：US20200051622A1

公开(公告)日：2020-02-13

申请号：US16654771

申请日：2019-10-16

Applicant: KIOXIA Corporation

Inventor： Weihan WANG ,  Toshifumi HASHIMOTO ,  Noboru SHIBATA

IPC: G11C11/56 ,  G11C16/08 ,  G11C16/32 ,  G06F3/06 ,  G11C16/04

Abstract: A semiconductor memory device includes a first memory cell array including a first memory cell that is capable of holding two or more bits of data including at least a first bit and a second bit, a second memory cell array including a second memory cell that is capable of holding two or more bits of data including at least a first bit and a second bit, a first word line electrically connected to a gate of the first memory cell, and a second word line electrically connected to a gate of the second memory cell. In a read operation, at least first, second, and third voltages are applied successively to both the first word line and the second word line to read a first page including the first bit of the first memory cell and a second page including the second bit of the second memory cell.

公开(公告)号：US20200090753A1

公开(公告)日：2020-03-19

申请号：US16692233

申请日：2019-11-22

Applicant: KIOXIA CORPORATION

Inventor： Weihan WANG ,  Takahiro SHIMIZU ,  Noboru SHIBATA

IPC: G11C16/04 ,  G11C11/56 ,  G11C16/08 ,  H03M13/29 ,  G06F11/10 ,  G11C16/34

Abstract: A semiconductor storage device includes a first memory string having first, second, and third memory cells and a first select transistor, a second memory string having fourth, fifth, and sixth memory cells and a second select transistor, a third memory string having seventh, eighth, and ninth memory cells and a third select transistor, a first word line connected to gates of the first, fourth, and seventh memory cells, a second word line connected to gates of the second, fifth, and eighth memory cells, and a third word line connected to gates of the third, sixth, and ninth memory cells. A write operation for writing multi-bit data in the memory cells includes first and second write operations. In the second write operations performed through the first, second, and third word lines, respective ones of the first, fifth, and ninth memory cell are initially selected.